Growth and in situ x-ray characterization of YBa2Cu3Ox/LaAlO3 superlattices

S. M. Williams, S. Maglic, C. Thomas, C. T. Lin, M. J. Wagoner, Robert P. H. Chang, J. B. Ketterson

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We utilized a miniature sputtering cell with mylar windows and multitarget sputtering guns in order to study the growth of YBCO/LaAlO3 superlattices on SrTiO3 substrates. Computer modeling of the diffraction spectra enabled us to determine the interface width between the layers. After deposition of the superlattices, the substrate temperature was increased to study any interdiffusion.

Original languageEnglish
Pages (from-to)1485-1487
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number11
DOIs
Publication statusPublished - 1996

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superlattices
sputtering
Mylar (trademark)
x rays
cells
diffraction
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Williams, S. M., Maglic, S., Thomas, C., Lin, C. T., Wagoner, M. J., Chang, R. P. H., & Ketterson, J. B. (1996). Growth and in situ x-ray characterization of YBa2Cu3Ox/LaAlO3 superlattices. Applied Physics Letters, 68(11), 1485-1487. https://doi.org/10.1063/1.116262

Growth and in situ x-ray characterization of YBa2Cu3Ox/LaAlO3 superlattices. / Williams, S. M.; Maglic, S.; Thomas, C.; Lin, C. T.; Wagoner, M. J.; Chang, Robert P. H.; Ketterson, J. B.

In: Applied Physics Letters, Vol. 68, No. 11, 1996, p. 1485-1487.

Research output: Contribution to journalArticle

Williams, SM, Maglic, S, Thomas, C, Lin, CT, Wagoner, MJ, Chang, RPH & Ketterson, JB 1996, 'Growth and in situ x-ray characterization of YBa2Cu3Ox/LaAlO3 superlattices', Applied Physics Letters, vol. 68, no. 11, pp. 1485-1487. https://doi.org/10.1063/1.116262
Williams, S. M. ; Maglic, S. ; Thomas, C. ; Lin, C. T. ; Wagoner, M. J. ; Chang, Robert P. H. ; Ketterson, J. B. / Growth and in situ x-ray characterization of YBa2Cu3Ox/LaAlO3 superlattices. In: Applied Physics Letters. 1996 ; Vol. 68, No. 11. pp. 1485-1487.
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