Growth and morphology of pentacene films on oxide surfaces

Ricardo Ruiz, Leonard C. Feldman, Richard F. Haglund, Rodney A. McKee, Norbert Koch, Bert A. Nickel, Jens Pflaum, Giacinto Scoles, Antoine Kahn

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Pentacene thin films were grown in ultra high vacuum on amorphous SiO2 and on a high dielectric constant material, crystalline BaTiO3. During pentacene deposition, substrates were held at three different temperatures (-650, 250 and 750 C). In general, three different morphologies were identified: A first closed interfacial layer, a thin film mode composed of faceted grains with single molecule step height, and a volume mode with features substantially higher than those of the film mode. Analysis was carried out by atomic force microscopy and in some cases by synchrotron X-ray diffraction.

Original languageEnglish
Pages (from-to)415-421
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - Jan 1 2002

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Growth and morphology of pentacene films on oxide surfaces'. Together they form a unique fingerprint.

Cite this