Growth and structural analysis of an ordered boron monolayer in Si(100)

B. E. Weir, R. L. Headrick, Q. Shen, Leonard C Feldman, M. S. Hybertsen, M. Needels, M. Schlüter, T. R. Hart

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (

Original languageEnglish
Pages (from-to)12861-12864
Number of pages4
JournalPhysical Review B
Volume46
Issue number19
DOIs
Publication statusPublished - 1992

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Boron
structural analysis
Structural analysis
Monolayers
boron
X rays
x rays

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Weir, B. E., Headrick, R. L., Shen, Q., Feldman, L. C., Hybertsen, M. S., Needels, M., ... Hart, T. R. (1992). Growth and structural analysis of an ordered boron monolayer in Si(100). Physical Review B, 46(19), 12861-12864. https://doi.org/10.1103/PhysRevB.46.12861

Growth and structural analysis of an ordered boron monolayer in Si(100). / Weir, B. E.; Headrick, R. L.; Shen, Q.; Feldman, Leonard C; Hybertsen, M. S.; Needels, M.; Schlüter, M.; Hart, T. R.

In: Physical Review B, Vol. 46, No. 19, 1992, p. 12861-12864.

Research output: Contribution to journalArticle

Weir, BE, Headrick, RL, Shen, Q, Feldman, LC, Hybertsen, MS, Needels, M, Schlüter, M & Hart, TR 1992, 'Growth and structural analysis of an ordered boron monolayer in Si(100)', Physical Review B, vol. 46, no. 19, pp. 12861-12864. https://doi.org/10.1103/PhysRevB.46.12861
Weir, B. E. ; Headrick, R. L. ; Shen, Q. ; Feldman, Leonard C ; Hybertsen, M. S. ; Needels, M. ; Schlüter, M. ; Hart, T. R. / Growth and structural analysis of an ordered boron monolayer in Si(100). In: Physical Review B. 1992 ; Vol. 46, No. 19. pp. 12861-12864.
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