Growth and structural analysis of an ordered boron monolayer in Si(100)

B. E. Weir, R. L. Headrick, Q. Shen, L. C. Feldman, M. S. Hybertsen, M. Needels, M. Schlüter, T. R. Hart

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Abstract

We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (<3 monolayers) segregation of the B during Si overgrowth, leaving over half of the B atoms in ordered sites. Ordering persists over length scales comparable to the clean-surface terrace width, as measured by grazing angle x-ray diffraction.

Original languageEnglish
Pages (from-to)12861-12864
Number of pages4
JournalPhysical Review B
Volume46
Issue number19
DOIs
Publication statusPublished - Jan 1 1992

ASJC Scopus subject areas

  • Condensed Matter Physics

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    Weir, B. E., Headrick, R. L., Shen, Q., Feldman, L. C., Hybertsen, M. S., Needels, M., Schlüter, M., & Hart, T. R. (1992). Growth and structural analysis of an ordered boron monolayer in Si(100). Physical Review B, 46(19), 12861-12864. https://doi.org/10.1103/PhysRevB.46.12861