Abstract
We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (<3 monolayers) segregation of the B during Si overgrowth, leaving over half of the B atoms in ordered sites. Ordering persists over length scales comparable to the clean-surface terrace width, as measured by grazing angle x-ray diffraction.
Original language | English |
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Pages (from-to) | 12861-12864 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 46 |
Issue number | 19 |
DOIs | |
Publication status | Published - Jan 1 1992 |
ASJC Scopus subject areas
- Condensed Matter Physics