Growth and structural analysis of an ordered boron monolayer in Si(100)

B. E. Weir; R. L. Headrick; Q. Shen; L. C. Feldman; M. S. Hybertsen; M. Needels; M. Schlüter; T. R. Hart

doi:10.1103/PhysRevB.46.12861

Growth and structural analysis of an ordered boron monolayer in Si(100)

B. E. Weir, R. L. Headrick, Q. Shen, L. C. Feldman, M. S. Hybertsen, M. Needels, M. Schlüter, T. R. Hart

Rutgers University

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (<3 monolayers) segregation of the B during Si overgrowth, leaving over half of the B atoms in ordered sites. Ordering persists over length scales comparable to the clean-surface terrace width, as measured by grazing angle x-ray diffraction.

Original language	English
Pages (from-to)	12861-12864
Number of pages	4
Journal	Physical Review B
Volume	46
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.46.12861
Publication status	Published - 1992

ASJC Scopus subject areas

Condensed Matter Physics

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AU - Weir, B. E.

AU - Headrick, R. L.

AU - Shen, Q.

AU - Feldman, L. C.

AU - Hybertsen, M. S.

AU - Needels, M.

AU - Schlüter, M.

AU - Hart, T. R.

PY - 1992

Y1 - 1992

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AB - We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (<3 monolayers) segregation of the B during Si overgrowth, leaving over half of the B atoms in ordered sites. Ordering persists over length scales comparable to the clean-surface terrace width, as measured by grazing angle x-ray diffraction.

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Growth and structural analysis of an ordered boron monolayer in Si(100)

Abstract

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