Growth and structural analysis of an ordered boron monolayer in Si(100)

B. E. Weir; R. L. Headrick; Q. Shen; Leonard C Feldman; M. S. Hybertsen; M. Needels; M. Schlüter; T. R. Hart

doi:10.1103/PhysRevB.46.12861

Growth and structural analysis of an ordered boron monolayer in Si(100)

B. E. Weir, R. L. Headrick, Q. Shen, Leonard C Feldman, M. S. Hybertsen, M. Needels, M. Schlüter, T. R. Hart

Rutgers University

Research output: Contribution to journal › Article

27 Citations (Scopus)

Abstract

We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (

Original language	English
Pages (from-to)	12861-12864
Number of pages	4
Journal	Physical Review B
Volume	46
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.46.12861
Publication status	Published - 1992

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ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Weir, B. E., Headrick, R. L., Shen, Q., Feldman, L. C., Hybertsen, M. S., Needels, M., ... Hart, T. R. (1992). Growth and structural analysis of an ordered boron monolayer in Si(100). Physical Review B, 46(19), 12861-12864. https://doi.org/10.1103/PhysRevB.46.12861

@article{82b5497f7a5d4d71a0d4266e17c7c5db,

title = "Growth and structural analysis of an ordered boron monolayer in Si(100)",

abstract = "We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (",

author = "Weir, {B. E.} and Headrick, {R. L.} and Q. Shen and Feldman, {Leonard C} and Hybertsen, {M. S.} and M. Needels and M. Schl{\"u}ter and Hart, {T. R.}",

year = "1992",

doi = "10.1103/PhysRevB.46.12861",

language = "English",

volume = "46",

pages = "12861--12864",

journal = "Physical Review B-Condensed Matter",

issn = "1098-0121",

publisher = "American Physical Society",

number = "19",

}

TY - JOUR

T1 - Growth and structural analysis of an ordered boron monolayer in Si(100)

AU - Weir, B. E.

AU - Headrick, R. L.

AU - Shen, Q.

AU - Feldman, Leonard C

AU - Hybertsen, M. S.

AU - Needels, M.

AU - Schlüter, M.

AU - Hart, T. R.

PY - 1992

Y1 - 1992

N2 - We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (

AB - We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (

UR - http://www.scopus.com/inward/record.url?scp=0000164207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000164207&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.46.12861

DO - 10.1103/PhysRevB.46.12861

M3 - Article

AN - SCOPUS:0000164207

VL - 46

SP - 12861

EP - 12864

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 19

ER -

Access to Document

10.1103/PhysRevB.46.12861