Abstract
We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (<3 monolayers) segregation of the B during Si overgrowth, leaving over half of the B atoms in ordered sites. Ordering persists over length scales comparable to the clean-surface terrace width, as measured by grazing angle x-ray diffraction.
| Original language | English |
|---|---|
| Pages (from-to) | 12861-12864 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 46 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - Jan 1 1992 |
ASJC Scopus subject areas
- Condensed Matter Physics
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Weir, B. E., Headrick, R. L., Shen, Q., Feldman, L. C., Hybertsen, M. S., Needels, M., Schlüter, M., & Hart, T. R. (1992). Growth and structural analysis of an ordered boron monolayer in Si(100). Physical Review B, 46(19), 12861-12864. https://doi.org/10.1103/PhysRevB.46.12861