Growth and structural analysis of an ordered boron monolayer in Si(100)

B. E. Weir, R. L. Headrick, Q. Shen, Leonard C Feldman, M. S. Hybertsen, M. Needels, M. Schlüter, T. R. Hart

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Abstract

We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (

Original languageEnglish
Pages (from-to)12861-12864
Number of pages4
JournalPhysical Review B
Volume46
Issue number19
DOIs
Publication statusPublished - 1992

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ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Weir, B. E., Headrick, R. L., Shen, Q., Feldman, L. C., Hybertsen, M. S., Needels, M., ... Hart, T. R. (1992). Growth and structural analysis of an ordered boron monolayer in Si(100). Physical Review B, 46(19), 12861-12864. https://doi.org/10.1103/PhysRevB.46.12861