Abstract
We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (
| Original language | English |
|---|---|
| Pages (from-to) | 12861-12864 |
| Number of pages | 4 |
| Journal | Physical Review B |
| Volume | 46 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 1992 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Growth and structural analysis of an ordered boron monolayer in Si(100). / Weir, B. E.; Headrick, R. L.; Shen, Q.; Feldman, Leonard C; Hybertsen, M. S.; Needels, M.; Schlüter, M.; Hart, T. R.
In: Physical Review B, Vol. 46, No. 19, 1992, p. 12861-12864.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth and structural analysis of an ordered boron monolayer in Si(100)
AU - Weir, B. E.
AU - Headrick, R. L.
AU - Shen, Q.
AU - Feldman, Leonard C
AU - Hybertsen, M. S.
AU - Needels, M.
AU - Schlüter, M.
AU - Hart, T. R.
PY - 1992
Y1 - 1992
N2 - We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (
AB - We have fabricated and characterized a novel structure: an ordered B monolayer deposited onto Si(100) and capped with epitaxial Si. X-ray structural data, compared to a first-principles model, suggests limited (
UR - http://www.scopus.com/inward/record.url?scp=0000164207&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000164207&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.46.12861
DO - 10.1103/PhysRevB.46.12861
M3 - Article
AN - SCOPUS:0000164207
VL - 46
SP - 12861
EP - 12864
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 19
ER -