Growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon

H. C. Lu, E. Gusev, N. Yasuda, M. Green, G. Alers, E. Garfunkel, T. Gustafsson

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We summarize some recent work on the formation mechanisms, structure and composition of oxynitride and high-K films, as investigated by high-resolution medium-energy ion scattering (MEIS). We show that nitridation of a silicon oxide thin film takes place through transport of NO molecules to the oxide/silicon interface. Ta2O5 films on Si have a compositionally graded oxide, breaking up at high annealing temperatures. A thin buffer layer of Si3N4 can prevent this.

Original languageEnglish
Pages (from-to)465-468
Number of pages4
JournalApplied Surface Science
Volume166
Issue number1
DOIs
Publication statusPublished - Oct 9 2000

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ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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