Growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon

H. C. Lu, E. Gusev, N. Yasuda, M. Green, G. Alers, Eric Garfunkel, T. Gustafsson

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We summarize some recent work on the formation mechanisms, structure and composition of oxynitride and high-K films, as investigated by high-resolution medium-energy ion scattering (MEIS). We show that nitridation of a silicon oxide thin film takes place through transport of NO molecules to the oxide/silicon interface. Ta2O5 films on Si have a compositionally graded oxide, breaking up at high annealing temperatures. A thin buffer layer of Si3N4 can prevent this.

Original languageEnglish
Pages (from-to)465-468
Number of pages4
JournalApplied Surface Science
Volume166
Issue number1
DOIs
Publication statusPublished - Oct 9 2000

Fingerprint

Ultrathin films
oxynitrides
Silicon oxides
Silicon
silicon oxides
Oxide films
metal oxides
oxide films
Metals
chemistry
Nitridation
oxides
ion scattering
silicon
Buffer layers
Oxides
buffers
Scattering
Annealing
Ions

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon. / Lu, H. C.; Gusev, E.; Yasuda, N.; Green, M.; Alers, G.; Garfunkel, Eric; Gustafsson, T.

In: Applied Surface Science, Vol. 166, No. 1, 09.10.2000, p. 465-468.

Research output: Contribution to journalArticle

Lu, H. C. ; Gusev, E. ; Yasuda, N. ; Green, M. ; Alers, G. ; Garfunkel, Eric ; Gustafsson, T. / Growth chemistry and interfacial properties of silicon oxynitride and metal oxide ultrathin films on silicon. In: Applied Surface Science. 2000 ; Vol. 166, No. 1. pp. 465-468.
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