Abstract
The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.
Original language | English |
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Pages (from-to) | 123-139 |
Number of pages | 17 |
Journal | Surface Science |
Volume | 336 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - Aug 1 1995 |
Keywords
- Aluminum
- Aluminum oxide
- Ceramic thin films
- Low energy ion scattering (LEIS)
- Ruthenium
- X-ray photoelectron spectroscopy (XPS)
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry