Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)

Yutong Wu; Hui Shu Tao; Eric Garfunkel; Theodore E. Madey; Neal D. Shinn

doi:10.1016/0039-6028(95)00494-7

Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)

Yutong Wu, Hui Shu Tao, Eric Garfunkel, Theodore E. Madey, Neal D. Shinn

Rutgers University

Research output: Contribution to journal › Article

44 Citations (Scopus)

Abstract

The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10^-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.

Original language	English
Pages (from-to)	123-139
Number of pages	17
Journal	Surface Science
Volume	336
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(95)00494-7
Publication status	Published - Aug 1 1995

Keywords

Aluminum
Aluminum oxide
Ceramic thin films
Low energy ion scattering (LEIS)
Ruthenium
X-ray photoelectron spectroscopy (XPS)

ASJC Scopus subject areas

Materials Chemistry
Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces
Physical and Theoretical Chemistry

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Wu, Y., Tao, H. S., Garfunkel, E., Madey, T. E., & Shinn, N. D. (1995). Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001). Surface Science, 336(1-2), 123-139. https://doi.org/10.1016/0039-6028(95)00494-7

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abstract = "The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.",

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AU - Wu, Yutong

AU - Tao, Hui Shu

AU - Garfunkel, Eric

AU - Madey, Theodore E.

AU - Shinn, Neal D.

PY - 1995/8/1

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N2 - The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.

AB - The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.

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