Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)

Yutong Wu; Hui Shu Tao; Eric Garfunkel; Theodore E. Madey; Neal D. Shinn

doi:10.1016/0039-6028(95)00494-7

Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)

Yutong Wu, Hui Shu Tao, Eric Garfunkel, Theodore E. Madey, Neal D. Shinn

Rutgers University

Research output: Contribution to journal › Article

44 Citations (Scopus)

Abstract

The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10^-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.

Original language	English
Pages (from-to)	123-139
Number of pages	17
Journal	Surface Science
Volume	336
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(95)00494-7
Publication status	Published - Aug 1 1995

Fingerprint

Keywords

Aluminum
Aluminum oxide
Ceramic thin films
Low energy ion scattering (LEIS)
Ruthenium
X-ray photoelectron spectroscopy (XPS)

ASJC Scopus subject areas

Materials Chemistry
Surfaces, Coatings and Films
Condensed Matter Physics
Surfaces and Interfaces
Physical and Theoretical Chemistry

Cite this

Wu, Y., Tao, H. S., Garfunkel, E., Madey, T. E., & Shinn, N. D. (1995). Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001). Surface Science, 336(1-2), 123-139. https://doi.org/10.1016/0039-6028(95)00494-7

@article{844a6b5e747d4a3c81c54bf1f3fc527d,

title = "Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)",

abstract = "The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.",

keywords = "Aluminum, Aluminum oxide, Ceramic thin films, Low energy ion scattering (LEIS), Ruthenium, X-ray photoelectron spectroscopy (XPS)",

author = "Yutong Wu and Tao, {Hui Shu} and Eric Garfunkel and Madey, {Theodore E.} and Shinn, {Neal D.}",

year = "1995",

month = "8",

day = "1",

doi = "10.1016/0039-6028(95)00494-7",

language = "English",

volume = "336",

pages = "123--139",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier",

number = "1-2",

}

TY - JOUR

T1 - Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)

AU - Wu, Yutong

AU - Tao, Hui Shu

AU - Garfunkel, Eric

AU - Madey, Theodore E.

AU - Shinn, Neal D.

PY - 1995/8/1

Y1 - 1995/8/1

N2 - The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.

AB - The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.

KW - Aluminum

KW - Aluminum oxide

KW - Ceramic thin films

KW - Low energy ion scattering (LEIS)

KW - Ruthenium

KW - X-ray photoelectron spectroscopy (XPS)

UR - http://www.scopus.com/inward/record.url?scp=0029358559&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029358559&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(95)00494-7

DO - 10.1016/0039-6028(95)00494-7

M3 - Article

AN - SCOPUS:0029358559

VL - 336

SP - 123

EP - 139

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-2

ER -

Access to Document

10.1016/0039-6028(95)00494-7