Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)

Yutong Wu, Hui Shu Tao, Eric Garfunkel, Theodore E. Madey, Neal D. Shinn

Research output: Contribution to journalArticlepeer-review

44 Citations (Scopus)


The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.

Original languageEnglish
Pages (from-to)123-139
Number of pages17
JournalSurface Science
Issue number1-2
Publication statusPublished - Aug 1 1995


  • Aluminum
  • Aluminum oxide
  • Ceramic thin films
  • Low energy ion scattering (LEIS)
  • Ruthenium
  • X-ray photoelectron spectroscopy (XPS)

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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