Abstract
The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.
| Original language | English |
|---|---|
| Pages (from-to) | 123-139 |
| Number of pages | 17 |
| Journal | Surface Science |
| Volume | 336 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - Aug 1 1995 |
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Keywords
- Aluminum
- Aluminum oxide
- Ceramic thin films
- Low energy ion scattering (LEIS)
- Ruthenium
- X-ray photoelectron spectroscopy (XPS)
ASJC Scopus subject areas
- Materials Chemistry
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces
- Physical and Theoretical Chemistry
Cite this
Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001). / Wu, Yutong; Tao, Hui Shu; Garfunkel, Eric; Madey, Theodore E.; Shinn, Neal D.
In: Surface Science, Vol. 336, No. 1-2, 01.08.1995, p. 123-139.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth, interfacial alloying, and oxidation of ultra-thin Al films on Ru(0001)
AU - Wu, Yutong
AU - Tao, Hui Shu
AU - Garfunkel, Eric
AU - Madey, Theodore E.
AU - Shinn, Neal D.
PY - 1995/8/1
Y1 - 1995/8/1
N2 - The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.
AB - The growth and oxidation of ultra-thin aluminum films on Ru(0001) have been studied by low energy ion scattering (LEIS) and X-ray photoelectron spectroscopy (XPS) using both Mg K α and synchrotron soft X-ray radiation. For Al films of average thickness ∼ 15 A ̊ deposited at 300 K, LEIS demonstrates that the Ru substrate is completely covered. Upon annealing to ∼ 1000 K LEIS shows the reappearance of Ru at the surface. At the same time, the metallic Al 2p peak shifts to lower binding energy and a low binding energy shoulder appears on the Ru 3d peak, suggesting Al Ru interfacial alloying. Annealing Al films to ∼ 1000 K in 1 × 10-4 Torr oxygen produces an oxidized surface layer that completely covers the Ru substrate; the resultant aluminum oxide films are stoichiometric.
KW - Aluminum
KW - Aluminum oxide
KW - Ceramic thin films
KW - Low energy ion scattering (LEIS)
KW - Ruthenium
KW - X-ray photoelectron spectroscopy (XPS)
UR - http://www.scopus.com/inward/record.url?scp=0029358559&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029358559&partnerID=8YFLogxK
U2 - 10.1016/0039-6028(95)00494-7
DO - 10.1016/0039-6028(95)00494-7
M3 - Article
AN - SCOPUS:0029358559
VL - 336
SP - 123
EP - 139
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 1-2
ER -