Growth mechanism and clustering phenomena: The Ge-on-Si system

M. Zinke-Allmang, Leonard C Feldman, S. Nakahara, B. A. Davidson

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

The clustering behavior of Ge thin films deposited on Si has been investigated by ion scattering and electron microscopy. Post-deposit-annealed Ge is shown to cluster according to an Ostwald ripening mechanism. The cluster-volume growth is linear in time, and the cluster-size distribution is in agreement with the theoretical prediction. Cluster formation during low deposition rates is also studied. This permits an estimate of the limit for the application of the Ostwald-ripening approach to the nonzero deposition-rate regime.

Original languageEnglish
Pages (from-to)7848-7851
Number of pages4
JournalPhysical Review B
Volume39
Issue number11
DOIs
Publication statusPublished - 1989

Fingerprint

Ostwald ripening
Deposition rates
Electron microscopy
Deposits
Scattering
Ions
Thin films
ion scattering
electron microscopy
deposits
microscopy
estimates
thin films
predictions

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Growth mechanism and clustering phenomena : The Ge-on-Si system. / Zinke-Allmang, M.; Feldman, Leonard C; Nakahara, S.; Davidson, B. A.

In: Physical Review B, Vol. 39, No. 11, 1989, p. 7848-7851.

Research output: Contribution to journalArticle

Zinke-Allmang, M, Feldman, LC, Nakahara, S & Davidson, BA 1989, 'Growth mechanism and clustering phenomena: The Ge-on-Si system', Physical Review B, vol. 39, no. 11, pp. 7848-7851. https://doi.org/10.1103/PhysRevB.39.7848
Zinke-Allmang, M. ; Feldman, Leonard C ; Nakahara, S. ; Davidson, B. A. / Growth mechanism and clustering phenomena : The Ge-on-Si system. In: Physical Review B. 1989 ; Vol. 39, No. 11. pp. 7848-7851.
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