Growth mechanism and clustering phenomena: The Ge-on-Si system

M. Zinke-Allmang, Leonard C Feldman, S. Nakahara, B. A. Davidson

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Abstract

The clustering behavior of Ge thin films deposited on Si has been investigated by ion scattering and electron microscopy. Post-deposit-annealed Ge is shown to cluster according to an Ostwald ripening mechanism. The cluster-volume growth is linear in time, and the cluster-size distribution is in agreement with the theoretical prediction. Cluster formation during low deposition rates is also studied. This permits an estimate of the limit for the application of the Ostwald-ripening approach to the nonzero deposition-rate regime.

Original languageEnglish
Pages (from-to)7848-7851
Number of pages4
JournalPhysical Review B
Volume39
Issue number11
DOIs
Publication statusPublished - 1989

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ASJC Scopus subject areas

  • Condensed Matter Physics

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