Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films

Anchuan Wang, Nikki L. Edleman, Jason R. Babcock, Tobin J Marks, Melissa A. Lane, Paul R. Brazis, Carl R. Kannewurf

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Gallium-indium-oxide films (GaxIn2-xO3), where x = 0.0-1.1, were grown by low-pressure metalorganic chemical vapor deposition using the volatile metalorganic precursors In(dpm)3 and Ga(dpm)3 (dpm = 2,2,6,6-tetramethyl-3,5-heptanedionato). The films were smooth (root mean square roughness = 50-65 Å) with a homogeneously Ga-substituted, cubic In2O3 microstructure, randomly oriented on quartz or heteroepitaxial on (100) yttria-stabilized zirconia single-crystal substrates. The highest conductivity of the as-grown films was found at x = 0.12, with σ = 700 S/cm [n-type; carrier density = 8.1 × 1019 cm-3; mobility = 55.2 cm2/(V s); dσ/dT <0]. The optical transmission window of such films is considerably broader than that of Sn-doped In2O3, and the absolute transparency rival or exceeds that of the most transparent conductive oxides known. Reductive annealing, carried out at 400-425°C in a flowing gas mixture of H2 (4%) and N2, resulted in increased conductivity (σ = 1400 S/cm; n-type), carrier density (1.4 × 1020 cm-3), and mobility as high as 64.6 cm2/(V s), with little loss in optical transparency. No significant difference in carrier mobility or conductivity is observed between randomly oriented and heteroepitaxial films, arguing in combination with other data that carrier scattering effects at high-angle grain/domain boundaries play a minor role in the conductivity mechanism.

Original languageEnglish
Pages (from-to)3155-3162
Number of pages8
JournalJournal of Materials Research
Volume17
Issue number12
Publication statusPublished - Dec 2002

Fingerprint

gallium oxides
Gallium
Metallorganic chemical vapor deposition
indium oxides
Transparency
Indium
Oxide films
metalorganic chemical vapor deposition
Charge transfer
Thin films
conductivity
microstructure
Microstructure
thin films
Carrier concentration
Low pressure chemical vapor deposition
Quartz
Yttria stabilized zirconia
Carrier mobility
Light transmission

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films. / Wang, Anchuan; Edleman, Nikki L.; Babcock, Jason R.; Marks, Tobin J; Lane, Melissa A.; Brazis, Paul R.; Kannewurf, Carl R.

In: Journal of Materials Research, Vol. 17, No. 12, 12.2002, p. 3155-3162.

Research output: Contribution to journalArticle

Wang, Anchuan ; Edleman, Nikki L. ; Babcock, Jason R. ; Marks, Tobin J ; Lane, Melissa A. ; Brazis, Paul R. ; Kannewurf, Carl R. / Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films. In: Journal of Materials Research. 2002 ; Vol. 17, No. 12. pp. 3155-3162.
@article{02c2fb5ecbec48baafae4f90c2f13aec,
title = "Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films",
abstract = "Gallium-indium-oxide films (GaxIn2-xO3), where x = 0.0-1.1, were grown by low-pressure metalorganic chemical vapor deposition using the volatile metalorganic precursors In(dpm)3 and Ga(dpm)3 (dpm = 2,2,6,6-tetramethyl-3,5-heptanedionato). The films were smooth (root mean square roughness = 50-65 {\AA}) with a homogeneously Ga-substituted, cubic In2O3 microstructure, randomly oriented on quartz or heteroepitaxial on (100) yttria-stabilized zirconia single-crystal substrates. The highest conductivity of the as-grown films was found at x = 0.12, with σ = 700 S/cm [n-type; carrier density = 8.1 × 1019 cm-3; mobility = 55.2 cm2/(V s); dσ/dT <0]. The optical transmission window of such films is considerably broader than that of Sn-doped In2O3, and the absolute transparency rival or exceeds that of the most transparent conductive oxides known. Reductive annealing, carried out at 400-425°C in a flowing gas mixture of H2 (4{\%}) and N2, resulted in increased conductivity (σ = 1400 S/cm; n-type), carrier density (1.4 × 1020 cm-3), and mobility as high as 64.6 cm2/(V s), with little loss in optical transparency. No significant difference in carrier mobility or conductivity is observed between randomly oriented and heteroepitaxial films, arguing in combination with other data that carrier scattering effects at high-angle grain/domain boundaries play a minor role in the conductivity mechanism.",
author = "Anchuan Wang and Edleman, {Nikki L.} and Babcock, {Jason R.} and Marks, {Tobin J} and Lane, {Melissa A.} and Brazis, {Paul R.} and Kannewurf, {Carl R.}",
year = "2002",
month = "12",
language = "English",
volume = "17",
pages = "3155--3162",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "12",

}

TY - JOUR

T1 - Growth, microstructure, charge transport, and transparency of random polycrystalline and heteroepitaxial metalorganic chemical vapor deposition-derived gallium-indium-oxide thin films

AU - Wang, Anchuan

AU - Edleman, Nikki L.

AU - Babcock, Jason R.

AU - Marks, Tobin J

AU - Lane, Melissa A.

AU - Brazis, Paul R.

AU - Kannewurf, Carl R.

PY - 2002/12

Y1 - 2002/12

N2 - Gallium-indium-oxide films (GaxIn2-xO3), where x = 0.0-1.1, were grown by low-pressure metalorganic chemical vapor deposition using the volatile metalorganic precursors In(dpm)3 and Ga(dpm)3 (dpm = 2,2,6,6-tetramethyl-3,5-heptanedionato). The films were smooth (root mean square roughness = 50-65 Å) with a homogeneously Ga-substituted, cubic In2O3 microstructure, randomly oriented on quartz or heteroepitaxial on (100) yttria-stabilized zirconia single-crystal substrates. The highest conductivity of the as-grown films was found at x = 0.12, with σ = 700 S/cm [n-type; carrier density = 8.1 × 1019 cm-3; mobility = 55.2 cm2/(V s); dσ/dT <0]. The optical transmission window of such films is considerably broader than that of Sn-doped In2O3, and the absolute transparency rival or exceeds that of the most transparent conductive oxides known. Reductive annealing, carried out at 400-425°C in a flowing gas mixture of H2 (4%) and N2, resulted in increased conductivity (σ = 1400 S/cm; n-type), carrier density (1.4 × 1020 cm-3), and mobility as high as 64.6 cm2/(V s), with little loss in optical transparency. No significant difference in carrier mobility or conductivity is observed between randomly oriented and heteroepitaxial films, arguing in combination with other data that carrier scattering effects at high-angle grain/domain boundaries play a minor role in the conductivity mechanism.

AB - Gallium-indium-oxide films (GaxIn2-xO3), where x = 0.0-1.1, were grown by low-pressure metalorganic chemical vapor deposition using the volatile metalorganic precursors In(dpm)3 and Ga(dpm)3 (dpm = 2,2,6,6-tetramethyl-3,5-heptanedionato). The films were smooth (root mean square roughness = 50-65 Å) with a homogeneously Ga-substituted, cubic In2O3 microstructure, randomly oriented on quartz or heteroepitaxial on (100) yttria-stabilized zirconia single-crystal substrates. The highest conductivity of the as-grown films was found at x = 0.12, with σ = 700 S/cm [n-type; carrier density = 8.1 × 1019 cm-3; mobility = 55.2 cm2/(V s); dσ/dT <0]. The optical transmission window of such films is considerably broader than that of Sn-doped In2O3, and the absolute transparency rival or exceeds that of the most transparent conductive oxides known. Reductive annealing, carried out at 400-425°C in a flowing gas mixture of H2 (4%) and N2, resulted in increased conductivity (σ = 1400 S/cm; n-type), carrier density (1.4 × 1020 cm-3), and mobility as high as 64.6 cm2/(V s), with little loss in optical transparency. No significant difference in carrier mobility or conductivity is observed between randomly oriented and heteroepitaxial films, arguing in combination with other data that carrier scattering effects at high-angle grain/domain boundaries play a minor role in the conductivity mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0036966042&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036966042&partnerID=8YFLogxK

M3 - Article

VL - 17

SP - 3155

EP - 3162

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 12

ER -