Growth of atomically flat homoepitaxial magnesium oxide thin films by metal-organic chemical vapor deposition

W. Fan, P. R. Markworth, Tobin J Marks, Robert P. H. Chang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Homoepitaxial magnesium oxide thin films have been grown on MgO(1 0 0), (1 1 0) and (1 1 1) substrates by the plasma enhanced metal-organic chemical vapor deposition. Atomic force microscopy measurements indicate that the as-received MgO substrate surface morphology is greatly improved as a result of MgO homoepitaxial growth. Various oxygen partial pressures and plasma powers were selected to investigate the role of atomic oxygen species during the growth of the MgO thin films. Oxygen plasma conditions were analyzed by Langmuir probe measurements. These studies reveal that higher concentrations of atomic oxygen effectively assist the layer-by-layer growth kinetics, which are critical to generating atomically flat surfaces. Smooth surfaces, with roughness as low as 0.036 nm, are achieved on MgO(1 0 0) substrates under the conditions of 2.1 mTorr oxygen partial pressure and 1300 W plasma power at 720 °C.

Original languageEnglish
Pages (from-to)191-196
Number of pages6
JournalMaterials Chemistry and Physics
Volume70
Issue number2
DOIs
Publication statusPublished - May 1 2001

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Magnesium Oxide
Organic Chemicals
magnesium oxides
Magnesia
Organic chemicals
Oxide films
metalorganic chemical vapor deposition
Chemical vapor deposition
Metals
Oxygen
Thin films
oxygen
Plasmas
thin films
partial pressure
Partial pressure
Substrates
oxygen plasma
electrostatic probes
Langmuir probes

ASJC Scopus subject areas

  • Materials Chemistry

Cite this

Growth of atomically flat homoepitaxial magnesium oxide thin films by metal-organic chemical vapor deposition. / Fan, W.; Markworth, P. R.; Marks, Tobin J; Chang, Robert P. H.

In: Materials Chemistry and Physics, Vol. 70, No. 2, 01.05.2001, p. 191-196.

Research output: Contribution to journalArticle

@article{48ea19fbe1324aad944d8778a471916b,
title = "Growth of atomically flat homoepitaxial magnesium oxide thin films by metal-organic chemical vapor deposition",
abstract = "Homoepitaxial magnesium oxide thin films have been grown on MgO(1 0 0), (1 1 0) and (1 1 1) substrates by the plasma enhanced metal-organic chemical vapor deposition. Atomic force microscopy measurements indicate that the as-received MgO substrate surface morphology is greatly improved as a result of MgO homoepitaxial growth. Various oxygen partial pressures and plasma powers were selected to investigate the role of atomic oxygen species during the growth of the MgO thin films. Oxygen plasma conditions were analyzed by Langmuir probe measurements. These studies reveal that higher concentrations of atomic oxygen effectively assist the layer-by-layer growth kinetics, which are critical to generating atomically flat surfaces. Smooth surfaces, with roughness as low as 0.036 nm, are achieved on MgO(1 0 0) substrates under the conditions of 2.1 mTorr oxygen partial pressure and 1300 W plasma power at 720 °C.",
author = "W. Fan and Markworth, {P. R.} and Marks, {Tobin J} and Chang, {Robert P. H.}",
year = "2001",
month = "5",
day = "1",
doi = "10.1016/S0254-0584(00)00502-2",
language = "English",
volume = "70",
pages = "191--196",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "2",

}

TY - JOUR

T1 - Growth of atomically flat homoepitaxial magnesium oxide thin films by metal-organic chemical vapor deposition

AU - Fan, W.

AU - Markworth, P. R.

AU - Marks, Tobin J

AU - Chang, Robert P. H.

PY - 2001/5/1

Y1 - 2001/5/1

N2 - Homoepitaxial magnesium oxide thin films have been grown on MgO(1 0 0), (1 1 0) and (1 1 1) substrates by the plasma enhanced metal-organic chemical vapor deposition. Atomic force microscopy measurements indicate that the as-received MgO substrate surface morphology is greatly improved as a result of MgO homoepitaxial growth. Various oxygen partial pressures and plasma powers were selected to investigate the role of atomic oxygen species during the growth of the MgO thin films. Oxygen plasma conditions were analyzed by Langmuir probe measurements. These studies reveal that higher concentrations of atomic oxygen effectively assist the layer-by-layer growth kinetics, which are critical to generating atomically flat surfaces. Smooth surfaces, with roughness as low as 0.036 nm, are achieved on MgO(1 0 0) substrates under the conditions of 2.1 mTorr oxygen partial pressure and 1300 W plasma power at 720 °C.

AB - Homoepitaxial magnesium oxide thin films have been grown on MgO(1 0 0), (1 1 0) and (1 1 1) substrates by the plasma enhanced metal-organic chemical vapor deposition. Atomic force microscopy measurements indicate that the as-received MgO substrate surface morphology is greatly improved as a result of MgO homoepitaxial growth. Various oxygen partial pressures and plasma powers were selected to investigate the role of atomic oxygen species during the growth of the MgO thin films. Oxygen plasma conditions were analyzed by Langmuir probe measurements. These studies reveal that higher concentrations of atomic oxygen effectively assist the layer-by-layer growth kinetics, which are critical to generating atomically flat surfaces. Smooth surfaces, with roughness as low as 0.036 nm, are achieved on MgO(1 0 0) substrates under the conditions of 2.1 mTorr oxygen partial pressure and 1300 W plasma power at 720 °C.

UR - http://www.scopus.com/inward/record.url?scp=0035341795&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035341795&partnerID=8YFLogxK

U2 - 10.1016/S0254-0584(00)00502-2

DO - 10.1016/S0254-0584(00)00502-2

M3 - Article

VL - 70

SP - 191

EP - 196

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 2

ER -