Growth of graphene-like structures on an oxidized sic surface

Weijie Lu; W. C. Mitchel; J. J. Boeckl; Tiffany R. Crenshaw; W. E. Collins; R. P.H. Chang; L. C. Feldman

doi:10.1007/s11664-009-0715-5

Growth of graphene-like structures on an oxidized sic surface

Weijie Lu, W. C. Mitchel, J. J. Boeckl, Tiffany R. Crenshaw, W. E. Collins, R. P.H. Chang, L. C. Feldman

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO ₂/SiC structure was annealed at 1350°C in 10 ^-5 Torr; the SiO ₂ layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 ^-5 Torr.

Original language	English
Pages (from-to)	731-736
Number of pages	6
Journal	Journal of Electronic Materials
Volume	38
Issue number	6
DOIs	https://doi.org/10.1007/s11664-009-0715-5
Publication status	Published - Jun 1 2009

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Keywords

Carbon nanotubes
Graphene growth
SiC
Surface structures

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Lu, W., Mitchel, W. C., Boeckl, J. J., Crenshaw, T. R., Collins, W. E., Chang, R. P. H., & Feldman, L. C. (2009). Growth of graphene-like structures on an oxidized sic surface. Journal of Electronic Materials, 38(6), 731-736. https://doi.org/10.1007/s11664-009-0715-5

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AU - Chang, R. P.H.

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10.1007/s11664-009-0715-5