Growth of graphene-like structures on an oxidized sic surface

Weijie Lu; W. C. Mitchel; J. J. Boeckl; Tiffany R. Crenshaw; W. E. Collins; R. P.H. Chang; L. C. Feldman

doi:10.1007/s11664-009-0715-5

Growth of graphene-like structures on an oxidized sic surface

Weijie Lu, W. C. Mitchel, J. J. Boeckl, Tiffany R. Crenshaw, W. E. Collins, R. P.H. Chang, L. C. Feldman

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO ₂/SiC structure was annealed at 1350°C in 10 ^-5 Torr; the SiO ₂ layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 ^-5 Torr.

Original language	English
Pages (from-to)	731-736
Number of pages	6
Journal	Journal of Electronic Materials
Volume	38
Issue number	6
DOIs	https://doi.org/10.1007/s11664-009-0715-5
Publication status	Published - Jun 1 2009

Keywords

Carbon nanotubes
Graphene growth
SiC
Surface structures

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Growth of graphene-like structures on an oxidized sic surface",

abstract = "Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.",

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T1 - Growth of graphene-like structures on an oxidized sic surface

AU - Lu, Weijie

AU - Mitchel, W. C.

AU - Boeckl, J. J.

AU - Crenshaw, Tiffany R.

AU - Collins, W. E.

AU - Chang, R. P.H.

AU - Feldman, L. C.

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AB - Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.

KW - Carbon nanotubes

KW - Graphene growth

KW - SiC

KW - Surface structures

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