Abstract
Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.
| Original language | English |
|---|---|
| Pages (from-to) | 731-736 |
| Number of pages | 6 |
| Journal | Journal of Electronic Materials |
| Volume | 38 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Jun 1 2009 |
Keywords
- Carbon nanotubes
- Graphene growth
- SiC
- Surface structures
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Cite this
Lu, W., Mitchel, W. C., Boeckl, J. J., Crenshaw, T. R., Collins, W. E., Chang, R. P. H., & Feldman, L. C. (2009). Growth of graphene-like structures on an oxidized sic surface. Journal of Electronic Materials, 38(6), 731-736. https://doi.org/10.1007/s11664-009-0715-5