Growth of graphene-like structures on an oxidized sic surface

Weijie Lu, W. C. Mitchel, J. J. Boeckl, Tiffany R. Crenshaw, W. E. Collins, R. P.H. Chang, L. C. Feldman

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.

Original languageEnglish
Pages (from-to)731-736
Number of pages6
JournalJournal of Electronic Materials
Volume38
Issue number6
DOIs
Publication statusPublished - Jun 1 2009

Keywords

  • Carbon nanotubes
  • Graphene growth
  • SiC
  • Surface structures

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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