Growth of graphene-like structures on an oxidized sic surface

Weijie Lu, W. C. Mitchel, J. J. Boeckl, Tiffany R. Crenshaw, W. E. Collins, Robert P. H. Chang, Leonard C Feldman

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.

Original languageEnglish
Pages (from-to)731-736
Number of pages6
JournalJournal of Electronic Materials
Volume38
Issue number6
DOIs
Publication statusPublished - Jun 2009

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Graphene
graphene
Carbon Nanotubes
Ultrahigh vacuum
Oxides
ultrahigh vacuum
Carbon nanotubes
carbon nanotubes
Vacuum
Annealing
Temperature
vacuum
annealing
oxides
temperature

Keywords

  • Carbon nanotubes
  • Graphene growth
  • SiC
  • Surface structures

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Growth of graphene-like structures on an oxidized sic surface. / Lu, Weijie; Mitchel, W. C.; Boeckl, J. J.; Crenshaw, Tiffany R.; Collins, W. E.; Chang, Robert P. H.; Feldman, Leonard C.

In: Journal of Electronic Materials, Vol. 38, No. 6, 06.2009, p. 731-736.

Research output: Contribution to journal › Article

Lu, W, Mitchel, WC, Boeckl, JJ, Crenshaw, TR, Collins, WE, Chang, RPH & Feldman, LC 2009, 'Growth of graphene-like structures on an oxidized sic surface', Journal of Electronic Materials, vol. 38, no. 6, pp. 731-736. https://doi.org/10.1007/s11664-009-0715-5
Lu W, Mitchel WC, Boeckl JJ, Crenshaw TR, Collins WE, Chang RPH et al. Growth of graphene-like structures on an oxidized sic surface. Journal of Electronic Materials. 2009 Jun;38(6):731-736. https://doi.org/10.1007/s11664-009-0715-5
Lu, Weijie ; Mitchel, W. C. ; Boeckl, J. J. ; Crenshaw, Tiffany R. ; Collins, W. E. ; Chang, Robert P. H. ; Feldman, Leonard C. / Growth of graphene-like structures on an oxidized sic surface. In: Journal of Electronic Materials. 2009 ; Vol. 38, No. 6. pp. 731-736.
@article{7b2182828db745bbb54ba695a347bf3e,
title = "Growth of graphene-like structures on an oxidized sic surface",
abstract = "Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.",
keywords = "Carbon nanotubes, Graphene growth, SiC, Surface structures",
author = "Weijie Lu and Mitchel, {W. C.} and Boeckl, {J. J.} and Crenshaw, {Tiffany R.} and Collins, {W. E.} and Chang, {Robert P. H.} and Feldman, {Leonard C}",
year = "2009",
month = "6",
doi = "10.1007/s11664-009-0715-5",
language = "English",
volume = "38",
pages = "731--736",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "6",

}

TY - JOUR

T1 - Growth of graphene-like structures on an oxidized sic surface

AU - Lu, Weijie

AU - Mitchel, W. C.

AU - Boeckl, J. J.

AU - Crenshaw, Tiffany R.

AU - Collins, W. E.

AU - Chang, Robert P. H.

AU - Feldman, Leonard C

PY - 2009/6

Y1 - 2009/6

N2 - Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.

AB - Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.

KW - Carbon nanotubes

KW - Graphene growth

KW - SiC

KW - Surface structures

UR - http://www.scopus.com/inward/record.url?scp=67650493593&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=67650493593&partnerID=8YFLogxK

U2 - 10.1007/s11664-009-0715-5

DO - 10.1007/s11664-009-0715-5

M3 - Article

AN - SCOPUS:67650493593

VL - 38

SP - 731

EP - 736

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 6

ER -

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