Growth of graphene-like structures on an oxidized sic surface

Weijie Lu; W. C. Mitchel; J. J. Boeckl; Tiffany R. Crenshaw; W. E. Collins; R. P.H. Chang; L. C. Feldman

doi:10.1007/s11664-009-0715-5

Growth of graphene-like structures on an oxidized sic surface

Weijie Lu, W. C. Mitchel, J. J. Boeckl, Tiffany R. Crenshaw, W. E. Collins, R. P.H. Chang, L. C. Feldman

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO ₂/SiC structure was annealed at 1350°C in 10 ^-5 Torr; the SiO ₂ layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 ^-5 Torr.

Original language	English
Pages (from-to)	731-736
Number of pages	6
Journal	Journal of Electronic Materials
Volume	38
Issue number	6
DOIs	https://doi.org/10.1007/s11664-009-0715-5
Publication status	Published - Jun 2009

Keywords

Carbon nanotubes
Graphene growth
SiC
Surface structures

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Growth of graphene-like structures on an oxidized sic surface",

abstract = "Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.",

keywords = "Carbon nanotubes, Graphene growth, SiC, Surface structures",

author = "Weijie Lu and Mitchel, {W. C.} and Boeckl, {J. J.} and Crenshaw, {Tiffany R.} and Collins, {W. E.} and Chang, {R. P.H.} and Feldman, {L. C.}",

note = "Funding Information: The authors at Fisk University acknowledge support from Army Research Office (ARO) (W911NF-05-1-0460, the program manger, Dr. Charles Lee, at Air Force Office of Scientific Research (AFOSR)) and National Science Foundation (NSF) through the Center of Physics and Chemistry of Materials (HRD-0420516), and the Air Force Research Laboratory (AFRL) personnel acknowledge the support of AFOSR (Dr. Donald Silversmith). W. Lu acknowledges support from the Air Force Research Laboratory as a visiting scientist in the summer, 2007, through the Universal Technology Corporation (07-T583-004-C1). The authors thank Mr. David C. Liptak at AFRL for assistance with the Raman measurements.",

year = "2009",

month = jun,

doi = "10.1007/s11664-009-0715-5",

language = "English",

volume = "38",

pages = "731--736",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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AU - Lu, Weijie

AU - Mitchel, W. C.

AU - Boeckl, J. J.

AU - Crenshaw, Tiffany R.

AU - Collins, W. E.

AU - Chang, R. P.H.

AU - Feldman, L. C.

N1 - Funding Information: The authors at Fisk University acknowledge support from Army Research Office (ARO) (W911NF-05-1-0460, the program manger, Dr. Charles Lee, at Air Force Office of Scientific Research (AFOSR)) and National Science Foundation (NSF) through the Center of Physics and Chemistry of Materials (HRD-0420516), and the Air Force Research Laboratory (AFRL) personnel acknowledge the support of AFOSR (Dr. Donald Silversmith). W. Lu acknowledges support from the Air Force Research Laboratory as a visiting scientist in the summer, 2007, through the Universal Technology Corporation (07-T583-004-C1). The authors thank Mr. David C. Liptak at AFRL for assistance with the Raman measurements.

PY - 2009/6

Y1 - 2009/6

N2 - Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.

AB - Graphene-like structures were formed on an oxidized SiC (0001) surface following thermal annealing in a vacuum at high temperatures. The SiO 2/SiC structure was annealed at 1350°C in 10 -5 Torr; the SiO 2 layer was vaporized, and two layer graphene-like structures were formed on the SiC surface. This method of fabricating graphene did not require an ultra-high vacuum. In the absence of the oxide layer, a film of vertical carbon nanotubes (CNTs) was grown on the SiC surface in the same temperature range at 10 -5 Torr.

KW - Carbon nanotubes

KW - Graphene growth

KW - SiC

KW - Surface structures

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Growth of graphene-like structures on an oxidized sic surface

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