GROWTH OF GROUP IV-IV HETEROSTRUCTURES INITIAL STAGES OF INTERFACE FORMATION.

H. J. Gossmann, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The two major issues in the growth of a heterostructure are (1) the degree of perfection of the overlayer and (2) the sharpness of the interface. The initial stages of interface formation play a crucial role in this respect. Relevant questions are addressed under atomically clean conditions in the Si/Ge Si/Si and Ge/Sn systems, using ion scattering surface analysis, low energy electron diffraction and Auger electron spectroscopy. Of particular interest with respect to (1) is the general role of reconstruction in epitaxial growth: A necessary condition for perfect growth is the reordering of the substrate surface reconstruction. We show that the deposition temperature necessary to achieve this reordering depends strongly on the topography of the substrate reconstruction.

Original languageEnglish
Title of host publicationMaterials Research Society Symposia Proceedings
EditorsJohn C.C. Fan, John M. Poate
PublisherMaterials Research Soc
Pages251-258
Number of pages8
Volume67
ISBN (Print)0931837332
Publication statusPublished - 1986

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Gossmann, H. J., & Feldman, L. C. (1986). GROWTH OF GROUP IV-IV HETEROSTRUCTURES INITIAL STAGES OF INTERFACE FORMATION. In J. C. C. Fan, & J. M. Poate (Eds.), Materials Research Society Symposia Proceedings (Vol. 67, pp. 251-258). Materials Research Soc.