Growth of vertically aligned Si wire arrays over large areas (>1 cm2) with Au and Cu catalysts

Brendan M. Kayes, Michael A. Filler, Morgan C. Putnam, Michael D. Kelzenberg, Nathan S. Lewis, Harry A. Atwater

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Abstract

Arrays of vertically oriented Si wires with diameters of 1.5 μm and lengths of up to 75 μm were grown over areas >1 cm2 by photolithographically patterning an oxide buffer layer, followed by vapor-liquid-solid growth with either Au or Cu as the growth catalyst. The pattern fidelity depended critically on the presence of the oxide layer, which prevented migration of the catalyst on the surface during annealing and in the early stages of wire growth. These arrays can be used as the absorber material in novel photovoltaic architectures and potentially in photonic crystals in which large areas are needed.

Original languageEnglish
Article number103110
JournalApplied Physics Letters
Volume91
Issue number10
DOIs
Publication statusPublished - Sep 13 2007

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kayes, B. M., Filler, M. A., Putnam, M. C., Kelzenberg, M. D., Lewis, N. S., & Atwater, H. A. (2007). Growth of vertically aligned Si wire arrays over large areas (>1 cm2) with Au and Cu catalysts. Applied Physics Letters, 91(10), [103110]. https://doi.org/10.1063/1.2779236