Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition

M. Chhowalla, K. B.K. Teo, C. Ducati, N. L. Rupesinghe, G. A.J. Amaratunga, A. C. Ferrari, D. Roy, J. Robertson, W. I. Milne

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Abstract

The growth of vertically aligned carbon nanotubes using a direct current plasma enhanced chemical vapor deposition system is reported. The growth properties are studied as a function of the Ni catalyst layer thickness, bias voltage, deposition temperature, C2H2:NH3 ratio, and pressure. It was found that the diameter, growth rate, and areal density of the nanotubes are controlled by the initial thickness of the catalyst layer. The alignment of the nanotubes depends on the electric field. Our results indicate that the growth occurs by diffusion of carbon through the Ni catalyst particle, which rides on the top of the growing tube.

Original languageEnglish
Pages (from-to)5308-5317
Number of pages10
JournalJournal of Applied Physics
Volume90
Issue number10
DOIs
Publication statusPublished - Nov 15 2001

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Chhowalla, M., Teo, K. B. K., Ducati, C., Rupesinghe, N. L., Amaratunga, G. A. J., Ferrari, A. C., Roy, D., Robertson, J., & Milne, W. I. (2001). Growth process conditions of vertically aligned carbon nanotubes using plasma enhanced chemical vapor deposition. Journal of Applied Physics, 90(10), 5308-5317. https://doi.org/10.1063/1.1410322