Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition

L. A. Wills, W. A. Feil, B. W. Wessels, L. M. Tonge, Tobin J Marks

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate system were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.

Original languageEnglish
Pages (from-to)712-715
Number of pages4
JournalJournal of Crystal Growth
Volume107
Issue number1-4
DOIs
Publication statusPublished - Jan 1 1991

Fingerprint

Organometallics
Oxides
Ferroelectric materials
Chemical vapor deposition
vapor deposition
Ferroelectric thin films
Bismuth
Phase stability
oxides
Strontium
strontium
bismuth
low pressure
thin films
Chemical analysis
strontium titanium oxide

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition. / Wills, L. A.; Feil, W. A.; Wessels, B. W.; Tonge, L. M.; Marks, Tobin J.

In: Journal of Crystal Growth, Vol. 107, No. 1-4, 01.01.1991, p. 712-715.

Research output: Contribution to journalArticle

Wills, L. A. ; Feil, W. A. ; Wessels, B. W. ; Tonge, L. M. ; Marks, Tobin J. / Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition. In: Journal of Crystal Growth. 1991 ; Vol. 107, No. 1-4. pp. 712-715.
@article{5c9e776670454d4d8cb74605f37cbf45,
title = "Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition",
abstract = "Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate system were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.",
author = "Wills, {L. A.} and Feil, {W. A.} and Wessels, {B. W.} and Tonge, {L. M.} and Marks, {Tobin J}",
year = "1991",
month = "1",
day = "1",
doi = "10.1016/0022-0248(91)90547-I",
language = "English",
volume = "107",
pages = "712--715",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition

AU - Wills, L. A.

AU - Feil, W. A.

AU - Wessels, B. W.

AU - Tonge, L. M.

AU - Marks, Tobin J

PY - 1991/1/1

Y1 - 1991/1/1

N2 - Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate system were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.

AB - Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate system were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.

UR - http://www.scopus.com/inward/record.url?scp=0025800676&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025800676&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(91)90547-I

DO - 10.1016/0022-0248(91)90547-I

M3 - Article

AN - SCOPUS:0025800676

VL - 107

SP - 712

EP - 715

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -