Abstract
Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate system were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.
| Original language | English |
|---|---|
| Pages (from-to) | 712-715 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 107 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Jan 1 1991 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition. / Wills, L. A.; Feil, W. A.; Wessels, B. W.; Tonge, L. M.; Marks, Tobin J.
In: Journal of Crystal Growth, Vol. 107, No. 1-4, 01.01.1991, p. 712-715.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition
AU - Wills, L. A.
AU - Feil, W. A.
AU - Wessels, B. W.
AU - Tonge, L. M.
AU - Marks, Tobin J
PY - 1991/1/1
Y1 - 1991/1/1
N2 - Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate system were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.
AB - Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate system were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.
UR - http://www.scopus.com/inward/record.url?scp=0025800676&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0025800676&partnerID=8YFLogxK
U2 - 10.1016/0022-0248(91)90547-I
DO - 10.1016/0022-0248(91)90547-I
M3 - Article
AN - SCOPUS:0025800676
VL - 107
SP - 712
EP - 715
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1-4
ER -