Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition

L. A. Wills, W. A. Feil, B. W. Wessels, L. M. Tonge, Tobin J Marks

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Abstract

Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate system were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.

Original languageEnglish
Pages (from-to)712-715
Number of pages4
JournalJournal of Crystal Growth
Volume107
Issue number1-4
DOIs
Publication statusPublished - Jan 1 1991

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ASJC Scopus subject areas

  • Condensed Matter Physics

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