Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition

L. A. Wills; W. A. Feil; B. W. Wessels; L. M. Tonge; T. J. Marks

doi:10.1016/0022-0248(91)90547-I

Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition

L. A. Wills, W. A. Feil, B. W. Wessels, L. M. Tonge, T. J. Marks

Northwestern University

Research output: Contribution to journal › Article

41 Citations (Scopus)

Abstract

Low pressure organometallic chemical vapor deposition was used to prepare ferroelectric thin films. Both the bismuth and the strontium titanate system were investigated. Under the optimal growth conditions phase pure, textured films could be prepared. The growth parameters which influenced composition and phase stability were examined.

Original language	English
Pages (from-to)	712-715
Number of pages	4
Journal	Journal of Crystal Growth
Volume	107
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-0248(91)90547-I
Publication status	Published - Jan 1 1991

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Wills, L. A., Feil, W. A., Wessels, B. W., Tonge, L. M., & Marks, T. J. (1991). Growth studies of ferroelectric oxide layers prepared by organometallic chemical vapor deposition. Journal of Crystal Growth, 107(1-4), 712-715. https://doi.org/10.1016/0022-0248(91)90547-I

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