Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects

Martin M. Frank, Safak Sayan, Sabine Dörmann, Thomas J. Emge, Leszek S. Wielunski, Eric Garfunkel, Yves J. Chabal

Research output: Contribution to journal › Article

64 Citations (Scopus)

Abstract

We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH 3) 3) 4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO 2 films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO 2 stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.

Original languageEnglish
Pages (from-to)6-10
Number of pages5
JournalMaterials Science and Engineering B
Volume109
Issue number1-3
DOIs
Publication statusPublished - Jun 15 2004

Fingerprint

Hafnium oxides
hafnium oxides
Gate dielectrics
alkoxides
Infrared spectroscopy
Hafnium
infrared spectroscopy
Impurities
impurities
Defects
Dielectric films
hafnium
Carbonates
defects
Crystallites
Stoichiometry
Hydroxyl Radical
crystallites
Film thickness
stoichiometry

Keywords

  • Chemical vapor deposition
  • Infrared spectroscopy
  • Integrated technology
  • Metal-oxide-semiconductor structures
  • Oxides
  • Thin films

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Hafnium oxide gate dielectrics grown from an alkoxide precursor : Structure and defects. / Frank, Martin M.; Sayan, Safak; Dörmann, Sabine; Emge, Thomas J.; Wielunski, Leszek S.; Garfunkel, Eric; Chabal, Yves J.

In: Materials Science and Engineering B, Vol. 109, No. 1-3, 15.06.2004, p. 6-10.

Research output: Contribution to journal › Article

Frank, MM, Sayan, S, Dörmann, S, Emge, TJ, Wielunski, LS, Garfunkel, E & Chabal, YJ 2004, 'Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects', Materials Science and Engineering B, vol. 109, no. 1-3, pp. 6-10. https://doi.org/10.1016/j.mseb.2003.10.020
Frank MM, Sayan S, Dörmann S, Emge TJ, Wielunski LS, Garfunkel E et al. Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects. Materials Science and Engineering B. 2004 Jun 15;109(1-3):6-10. https://doi.org/10.1016/j.mseb.2003.10.020
Frank, Martin M. ; Sayan, Safak ; Dörmann, Sabine ; Emge, Thomas J. ; Wielunski, Leszek S. ; Garfunkel, Eric ; Chabal, Yves J. / Hafnium oxide gate dielectrics grown from an alkoxide precursor : Structure and defects. In: Materials Science and Engineering B. 2004 ; Vol. 109, No. 1-3. pp. 6-10.
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AB - We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH 3) 3) 4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO 2 films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO 2 stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.

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