Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects

Martin M. Frank; Safak Sayan; Sabine Dörmann; Thomas J. Emge; Leszek S. Wielunski; Eric Garfunkel; Yves J. Chabal

doi:10.1016/j.mseb.2003.10.020

Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects

Martin M. Frank, Safak Sayan, Sabine Dörmann, Thomas J. Emge, Leszek S. Wielunski, Eric Garfunkel, Yves J. Chabal

Rutgers University

Research output: Contribution to journal › Conference article

65 Citations (Scopus)

Abstract

We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH ₃) ₃) ₄. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO ₂ films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO ₂ stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.

Original language	English
Pages (from-to)	6-10
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	109
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2003.10.020
Publication status	Published - Jun 15 2004
Event	EMRS 2003, Symposium I, Funtional Metal Oxides - Semiconductors - Strasbourg, France Duration: Jun 10 2003 → Jun 13 2003

Keywords

Chemical vapor deposition
Infrared spectroscopy
Integrated technology
Metal-oxide-semiconductor structures
Oxides
Thin films

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Frank, M. M., Sayan, S., Dörmann, S., Emge, T. J., Wielunski, L. S., Garfunkel, E., & Chabal, Y. J. (2004). Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 109(1-3), 6-10. https://doi.org/10.1016/j.mseb.2003.10.020

Hafnium oxide gate dielectrics grown from an alkoxide precursor : Structure and defects. / Frank, Martin M.; Sayan, Safak; Dörmann, Sabine; Emge, Thomas J.; Wielunski, Leszek S.; Garfunkel, Eric; Chabal, Yves J.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 109, No. 1-3, 15.06.2004, p. 6-10.

Research output: Contribution to journal › Conference article

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abstract = "We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH 3) 3) 4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO 2 films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO 2 stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.",

keywords = "Chemical vapor deposition, Infrared spectroscopy, Integrated technology, Metal-oxide-semiconductor structures, Oxides, Thin films",

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AU - Sayan, Safak

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AU - Wielunski, Leszek S.

AU - Garfunkel, Eric

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N2 - We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH 3) 3) 4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO 2 films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO 2 stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.

AB - We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH 3) 3) 4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO 2 films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO 2 stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.

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KW - Infrared spectroscopy

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KW - Metal-oxide-semiconductor structures

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