Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects

Martin M. Frank; Safak Sayan; Sabine Dörmann; Thomas J. Emge; Leszek S. Wielunski; Eric Garfunkel; Yves J. Chabal

doi:10.1016/j.mseb.2003.10.020

Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects

Martin M. Frank, Safak Sayan, Sabine Dörmann, Thomas J. Emge, Leszek S. Wielunski, Eric Garfunkel, Yves J. Chabal

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

65 Citations (Scopus)

Abstract

We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH ₃) ₃) ₄. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO ₂ films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO ₂ stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.

Original language	English
Pages (from-to)	6-10
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	109
Issue number	1-3
DOIs	https://doi.org/10.1016/j.mseb.2003.10.020
Publication status	Published - Jun 15 2004
Event	EMRS 2003, Symposium I, Funtional Metal Oxides - Semiconductors - Strasbourg, France Duration: Jun 10 2003 → Jun 13 2003

Keywords

Chemical vapor deposition
Infrared spectroscopy
Integrated technology
Metal-oxide-semiconductor structures
Oxides
Thin films

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.mseb.2003.10.020

Fingerprint Dive into the research topics of 'Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects'. Together they form a unique fingerprint.

Cite this

Hafnium oxide gate dielectrics grown from an alkoxide precursor : Structure and defects. / Frank, Martin M.; Sayan, Safak; Dörmann, Sabine; Emge, Thomas J.; Wielunski, Leszek S.; Garfunkel, Eric; Chabal, Yves J.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 109, No. 1-3, 15.06.2004, p. 6-10.

Research output: Contribution to journal › Conference article › peer-review

@article{b4c78f1b24a44f1db560704b1cd639a7,

title = "Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects",

abstract = "We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH 3) 3) 4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO 2 films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO 2 stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.",

keywords = "Chemical vapor deposition, Infrared spectroscopy, Integrated technology, Metal-oxide-semiconductor structures, Oxides, Thin films",

author = "Frank, {Martin M.} and Safak Sayan and Sabine D{\"o}rmann and Emge, {Thomas J.} and Wielunski, {Leszek S.} and Eric Garfunkel and Chabal, {Yves J.}",

year = "2004",

month = jun,

day = "15",

doi = "10.1016/j.mseb.2003.10.020",

language = "English",

volume = "109",

pages = "6--10",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

number = "1-3",

note = "EMRS 2003, Symposium I, Funtional Metal Oxides - Semiconductors ; Conference date: 10-06-2003 Through 13-06-2003",

}

TY - JOUR

T1 - Hafnium oxide gate dielectrics grown from an alkoxide precursor

T2 - EMRS 2003, Symposium I, Funtional Metal Oxides - Semiconductors

AU - Frank, Martin M.

AU - Sayan, Safak

AU - Dörmann, Sabine

AU - Emge, Thomas J.

AU - Wielunski, Leszek S.

AU - Garfunkel, Eric

AU - Chabal, Yves J.

PY - 2004/6/15

Y1 - 2004/6/15

N2 - We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH 3) 3) 4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO 2 films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO 2 stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.

AB - We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH 3) 3) 4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO 2 films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO 2 stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.

KW - Chemical vapor deposition

KW - Infrared spectroscopy

KW - Integrated technology

KW - Metal-oxide-semiconductor structures

KW - Oxides

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=2342634503&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342634503&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2003.10.020

DO - 10.1016/j.mseb.2003.10.020

M3 - Conference article

AN - SCOPUS:2342634503

VL - 109

SP - 6

EP - 10

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

Y2 - 10 June 2003 through 13 June 2003

ER -