Hafnium oxide gate dielectrics grown from an alkoxide precursor: Structure and defects

Martin M. Frank, Safak Sayan, Sabine Dörmann, Thomas J. Emge, Leszek S. Wielunski, Eric Garfunkel, Yves J. Chabal

Research output: Contribution to journalConference articlepeer-review

65 Citations (Scopus)


We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH 3) 3) 4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO 2 films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO 2 stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.

Original languageEnglish
Pages (from-to)6-10
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number1-3
Publication statusPublished - Jun 15 2004
EventEMRS 2003, Symposium I, Funtional Metal Oxides - Semiconductors - Strasbourg, France
Duration: Jun 10 2003Jun 13 2003


  • Chemical vapor deposition
  • Infrared spectroscopy
  • Integrated technology
  • Metal-oxide-semiconductor structures
  • Oxides
  • Thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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