Abstract
We present an infrared spectroscopy and X-ray diffraction study of hafnium oxide gate dielectric films deposited from hafnium tetra-tert-butoxide, Hf(OC(CH 3) 3) 4. We characterize the crystal phase as a function of thickness and detect the chemical state of impurities in this high-permittivity (high-κ) material. The HfO 2 films are composed of monoclinic crystallites in an amorphous matrix. The crystalline fraction increases with increasing film thickness. Infrared spectroscopy is used to obtain information about impurities, which may help to uncover the nature of electrical defects. We detect and quantify for instance the presence of incorporated hydroxyl groups or water that may be responsible for the deviation from ideal HfO 2 stoichiometry. The concentration of residual C-H bonds is low. However, carbon is incorporated in an oxidized form, possibly as carbonate.
Original language | English |
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Pages (from-to) | 6-10 |
Number of pages | 5 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 109 |
Issue number | 1-3 |
DOIs | |
Publication status | Published - Jun 15 2004 |
Event | EMRS 2003, Symposium I, Funtional Metal Oxides - Semiconductors - Strasbourg, France Duration: Jun 10 2003 → Jun 13 2003 |
Keywords
- Chemical vapor deposition
- Infrared spectroscopy
- Integrated technology
- Metal-oxide-semiconductor structures
- Oxides
- Thin films
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering