Half-metallic exchange bias ferromagnetic/antiferromagnetic interfaces in transition-metal chalcogenides

Kohji Nakamura, Yoshinori Kato, Toru Akiyama, Tomonori Ito, Arthur J Freeman

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

To investigate half-metallic exchange bias interfaces, magnetic structures at ferromagnetic (FM)/antiferromagnetic (AFM) interfaces in the zinc blende transition-metal chalcogenides, CrSe/MnSe and CrTe/MnTe with compensated and uncompensated AFM interfaces, were determined by the full-potential linearized augmented plane-wave method. With the uncompensated AFM interface, an antiparallel alignment of the Cr and Mn moments induces an excellent half-metallicity. More striking still, in the compensated AFM interface the Cr moments in the FM layer lie perpendicular to the Mn moments in the AFM layer but the Mn moments strongly cant to induce a net moment so as to retain the half-metallicity. These findings may offer a key ingredient for exchange biased spintronic devices with 100% spin polarization, having a unidirectional anisotropy to control and manipulate spins at the nanoscale.

Original languageEnglish
Article number047206
JournalPhysical Review Letters
Volume96
Issue number4
DOIs
Publication statusPublished - 2006

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chalcogenides
transition metals
moments
metallicity
ingredients
plane waves
zinc
alignment
slopes
anisotropy
polarization

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Half-metallic exchange bias ferromagnetic/antiferromagnetic interfaces in transition-metal chalcogenides. / Nakamura, Kohji; Kato, Yoshinori; Akiyama, Toru; Ito, Tomonori; Freeman, Arthur J.

In: Physical Review Letters, Vol. 96, No. 4, 047206, 2006.

Research output: Contribution to journalArticle

Nakamura, Kohji ; Kato, Yoshinori ; Akiyama, Toru ; Ito, Tomonori ; Freeman, Arthur J. / Half-metallic exchange bias ferromagnetic/antiferromagnetic interfaces in transition-metal chalcogenides. In: Physical Review Letters. 2006 ; Vol. 96, No. 4.
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