Half-metallicity and efficient spin injection in AlN/GaN: Cr (0001) heterostructure

J. E. Medvedeva, Arthur J Freeman, X. Y. Cui, C. Stampfl, N. Newman

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31 Citations (Scopus)

Abstract

First-principles investigations of the structural, electronic, and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal the possibility of efficient spin injection from a ferromagnetic GaN:Cr electrode through an A1N tunnel barrier. We demonstrate that Cr atoms segregate into the GaN region and that these interfaces retain their half-metallic behavior leading to a complete, i.e., 100%, spin polarization of the conduction electrons. This property makes the wide band-gap nitrides doped with Cr to be excellent candidates for high-efficiency magnetoelectronic devices.

Original languageEnglish
Article number146602
JournalPhysical Review Letters
Volume94
Issue number14
DOIs
Publication statusPublished - Apr 15 2005

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metallicity
injection
conduction electrons
nitrides
tunnels
magnetic properties
broadband
electrodes
polarization
electronics
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Half-metallicity and efficient spin injection in AlN/GaN : Cr (0001) heterostructure. / Medvedeva, J. E.; Freeman, Arthur J; Cui, X. Y.; Stampfl, C.; Newman, N.

In: Physical Review Letters, Vol. 94, No. 14, 146602, 15.04.2005.

Research output: Contribution to journalArticle

Medvedeva, J. E. ; Freeman, Arthur J ; Cui, X. Y. ; Stampfl, C. ; Newman, N. / Half-metallicity and efficient spin injection in AlN/GaN : Cr (0001) heterostructure. In: Physical Review Letters. 2005 ; Vol. 94, No. 14.
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