TY - JOUR
T1 - Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure
AU - Medvedeva, J. E.
AU - Freeman, A. J.
AU - Cui, X. Y.
AU - Stampfl, C.
AU - Newman, N.
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2005/4/15
Y1 - 2005/4/15
N2 - First-principles investigations of the structural, electronic, and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal the possibility of efficient spin injection from a ferromagnetic GaN:Cr electrode through an A1N tunnel barrier. We demonstrate that Cr atoms segregate into the GaN region and that these interfaces retain their half-metallic behavior leading to a complete, i.e., 100%, spin polarization of the conduction electrons. This property makes the wide band-gap nitrides doped with Cr to be excellent candidates for high-efficiency magnetoelectronic devices.
AB - First-principles investigations of the structural, electronic, and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal the possibility of efficient spin injection from a ferromagnetic GaN:Cr electrode through an A1N tunnel barrier. We demonstrate that Cr atoms segregate into the GaN region and that these interfaces retain their half-metallic behavior leading to a complete, i.e., 100%, spin polarization of the conduction electrons. This property makes the wide band-gap nitrides doped with Cr to be excellent candidates for high-efficiency magnetoelectronic devices.
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U2 - 10.1103/PhysRevLett.94.146602
DO - 10.1103/PhysRevLett.94.146602
M3 - Article
AN - SCOPUS:18244376605
VL - 94
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 14
M1 - 146602
ER -