Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure

J. E. Medvedeva, A. J. Freeman, X. Y. Cui, C. Stampfl, N. Newman

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35 Citations (Scopus)


First-principles investigations of the structural, electronic, and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal the possibility of efficient spin injection from a ferromagnetic GaN:Cr electrode through an A1N tunnel barrier. We demonstrate that Cr atoms segregate into the GaN region and that these interfaces retain their half-metallic behavior leading to a complete, i.e., 100%, spin polarization of the conduction electrons. This property makes the wide band-gap nitrides doped with Cr to be excellent candidates for high-efficiency magnetoelectronic devices.

Original languageEnglish
Article number146602
JournalPhysical review letters
Issue number14
Publication statusPublished - Apr 15 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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