Half-metallicity at ferromagnetic/antiferromagnetic interfaces in zincblende transition-metal chalcogenides

A full-potential linearized augmented plane-wave study within LDA+U

Kohji Nakamura, Toru Akiyama, Tomonori Ito, Arthur J Freeman

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9 Citations (Scopus)

Abstract

Electronic structures and half-metallicity at ferromagneticantiferromagnetic (AFM) interfaces in zincblende transition-metal chalcogenides, CrSeMnSe and CrTeMnTe, are investigated by means of the first principles full-potential linearized augmented plane-wave method within the LDA+U, and the effect of correlation in the 3d states on the half-metallic interfaces is discussed. The uncompensated AFM interface with the antiparallel alignment of the Cr and Mn moments at the interfaces shows an excellent half-metallicity, where the correlation effect tends to manifest the half-metallic interfaces. This indicates that these interfaces offer a key ingredient as promising exchange bias candidates in having interfaces with 100% spin polarization at the Fermi level.

Original languageEnglish
Article number07C901
JournalJournal of Applied Physics
Volume103
Issue number7
DOIs
Publication statusPublished - 2008

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chalcogenides
zincblende
metallicity
plane waves
transition metals
ingredients
alignment
electronic structure
moments
polarization

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

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abstract = "Electronic structures and half-metallicity at ferromagneticantiferromagnetic (AFM) interfaces in zincblende transition-metal chalcogenides, CrSeMnSe and CrTeMnTe, are investigated by means of the first principles full-potential linearized augmented plane-wave method within the LDA+U, and the effect of correlation in the 3d states on the half-metallic interfaces is discussed. The uncompensated AFM interface with the antiparallel alignment of the Cr and Mn moments at the interfaces shows an excellent half-metallicity, where the correlation effect tends to manifest the half-metallic interfaces. This indicates that these interfaces offer a key ingredient as promising exchange bias candidates in having interfaces with 100{\%} spin polarization at the Fermi level.",
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AU - Ito, Tomonori

AU - Freeman, Arthur J

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AB - Electronic structures and half-metallicity at ferromagneticantiferromagnetic (AFM) interfaces in zincblende transition-metal chalcogenides, CrSeMnSe and CrTeMnTe, are investigated by means of the first principles full-potential linearized augmented plane-wave method within the LDA+U, and the effect of correlation in the 3d states on the half-metallic interfaces is discussed. The uncompensated AFM interface with the antiparallel alignment of the Cr and Mn moments at the interfaces shows an excellent half-metallicity, where the correlation effect tends to manifest the half-metallic interfaces. This indicates that these interfaces offer a key ingredient as promising exchange bias candidates in having interfaces with 100% spin polarization at the Fermi level.

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