Halide perovskite high-K field effect transistors with dynamically reconfigurable ambipolarity

Noelia Devesa Canicoba, Nicolo Zagni, Fangze Liu, Gary McCuistian, Kasun Fernando, Hugo Bellezza, Boubacar Traore, Regis Rogel, Hsinhan Tsai, Laurent Le Brizoual, Wanyi Nie, Jared J. Crochet, Sergei Tretiak, Claudine Katan, Jacky Even, Mercouri G. Kanatzidis, Bruce W. Alphenaar, Jean Christophe Blancon, Muhammad Ashraf Alam, Aditya D. Mohite

Research output: Contribution to journalArticlepeer-review

Abstract

Despite the remarkable optoelectronic properties of halide perovskites, achieving reproducible field effect transistor (FET) action in polycrystalline films at room temperature has been challenging and represents a fundamental bottleneck for understanding electronic charge transport in these materials. In this work, we report halide perovskite-based FET operation at room temperature with negligible hysteresis. Extensive measurements and device modeling reveal that incorporating high-k dielectrics enables modulation of the channel conductance. Furthermore, continuous bias cycling or resting allows dynamical reconfiguration of the FETs between p-type behavior and ambipolar FET with balanced electron and hole transport and an ON/OFF ratio up to 104 and negligible degradation in transport characteristics over 100 cycles. These results elucidate the path for achieving gate modulation in perovskite thin films and provide a platform to understand the interplay between the perovskite structure and external stimuli such as photons, fields, and functional substrates, which will lead to novel and emergent properties.

Original languageEnglish
Pages (from-to)633-640
Number of pages8
JournalACS Materials Letters
Volume1
Issue number6
DOIs
Publication statusPublished - 2019

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Biomedical Engineering
  • Materials Science(all)

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