Hall effect measurements on new thermoelectric materials

Jarrod Short, Sim Loo, Sangeeta Lal, Kuei Fang Hsu, Eric Quarez, Mercouri G. Kanatzidis, Timothy P. Hogan

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass. To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.

Original languageEnglish
Pages (from-to)323-332
Number of pages10
JournalMaterials Research Society Symposium - Proceedings
Volume793
Publication statusPublished - Dec 1 2003
EventThermoelectric Materials 2003 - Research and Applications - Boston, MA., United States
Duration: Dec 1 2003Dec 3 2003

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ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Short, J., Loo, S., Lal, S., Hsu, K. F., Quarez, E., Kanatzidis, M. G., & Hogan, T. P. (2003). Hall effect measurements on new thermoelectric materials. Materials Research Society Symposium - Proceedings, 793, 323-332.