Hall effect measurements on new thermoelectric materials

Jarrod Short, Sim Loo, Sangeeta Lal, Kuei Fang Hsu, Eric Quarez, Mercouri G Kanatzidis, Timothy P. Hogan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass. To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsG.S. Nolas, J. Yang, T.P. Hogan, D.C. Johnson
Pages323-332
Number of pages10
Volume793
Publication statusPublished - 2003
EventThermoelectric Materials 2003 - Research and Applications - Boston, MA., United States
Duration: Dec 1 2003Dec 3 2003

Other

OtherThermoelectric Materials 2003 - Research and Applications
CountryUnited States
CityBoston, MA.
Period12/1/0312/3/03

Fingerprint

Hall effect
Carrier mobility
Carrier concentration
Thermoelectric power
Thermal conductivity
Materials properties
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Short, J., Loo, S., Lal, S., Hsu, K. F., Quarez, E., Kanatzidis, M. G., & Hogan, T. P. (2003). Hall effect measurements on new thermoelectric materials. In G. S. Nolas, J. Yang, T. P. Hogan, & D. C. Johnson (Eds.), Materials Research Society Symposium - Proceedings (Vol. 793, pp. 323-332)

Hall effect measurements on new thermoelectric materials. / Short, Jarrod; Loo, Sim; Lal, Sangeeta; Hsu, Kuei Fang; Quarez, Eric; Kanatzidis, Mercouri G; Hogan, Timothy P.

Materials Research Society Symposium - Proceedings. ed. / G.S. Nolas; J. Yang; T.P. Hogan; D.C. Johnson. Vol. 793 2003. p. 323-332.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Short, J, Loo, S, Lal, S, Hsu, KF, Quarez, E, Kanatzidis, MG & Hogan, TP 2003, Hall effect measurements on new thermoelectric materials. in GS Nolas, J Yang, TP Hogan & DC Johnson (eds), Materials Research Society Symposium - Proceedings. vol. 793, pp. 323-332, Thermoelectric Materials 2003 - Research and Applications, Boston, MA., United States, 12/1/03.
Short J, Loo S, Lal S, Hsu KF, Quarez E, Kanatzidis MG et al. Hall effect measurements on new thermoelectric materials. In Nolas GS, Yang J, Hogan TP, Johnson DC, editors, Materials Research Society Symposium - Proceedings. Vol. 793. 2003. p. 323-332
Short, Jarrod ; Loo, Sim ; Lal, Sangeeta ; Hsu, Kuei Fang ; Quarez, Eric ; Kanatzidis, Mercouri G ; Hogan, Timothy P. / Hall effect measurements on new thermoelectric materials. Materials Research Society Symposium - Proceedings. editor / G.S. Nolas ; J. Yang ; T.P. Hogan ; D.C. Johnson. Vol. 793 2003. pp. 323-332
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