TY - JOUR
T1 - Hard Radiation Detection from the Selenophosphate Pb2P2Se6
AU - Wang, Peng L.
AU - Liu, Zhifu
AU - Chen, Pice
AU - Peters, John A.
AU - Tan, Gangjian
AU - Im, Jino
AU - Lin, Wenwen
AU - Freeman, Arthur J.
AU - Wessels, Bruce W.
AU - Kanatzidis, Mercouri G.
PY - 2015/8/1
Y1 - 2015/8/1
N2 - The heavy metal selenophosphate, Pb2P2Se6, is a promising new material for cost-effective X-ray/γ-ray detection. Crystal boules of Pb2P2Se6 up to 25 mm in length and 15 mm in diameter are grown by a vertical Bridgman method. They are cut and processed into size-appropriate wafers for physical, photo-transport property studies, as well as γ-ray detector testing. The material is a semiconductor with an indirect bandgap of 1.88 eV and has electrical resistivity in the range of 1 × 1010 Ω cm. Pb2P2Se6 single crystal samples display a significant photoconductivity response to optical, X-ray, and γ-ray radiation. When tested with a 57Co γ-ray source, Pb2P2Se6 crystals show spectroscopic response and several generated pulse height spectra resolving the 122.1 and 136.5 keV 57Co radiation. The mobility-lifetime product of Pb2P2Se6 is estimated to be ≈3.5 × 10-5 cm2 V-1 for electron carriers. The Pb2P2Se6 compound melts congruently at 812 °C and has robust chemical/physical properties that promise low cost bulk production and detector development. Wide bandgap selenophosphate Pb2P2Se6 is identified as a cost-effective X-ray and γ-ray detector material. The crystal growth of Pb2P2Se6 and characterizations in terms of its optical, electrical, thermal, and mechanical properties are reported. A Pb2P2Se6 single crystal detector is able to resolve 57Co radiation.
AB - The heavy metal selenophosphate, Pb2P2Se6, is a promising new material for cost-effective X-ray/γ-ray detection. Crystal boules of Pb2P2Se6 up to 25 mm in length and 15 mm in diameter are grown by a vertical Bridgman method. They are cut and processed into size-appropriate wafers for physical, photo-transport property studies, as well as γ-ray detector testing. The material is a semiconductor with an indirect bandgap of 1.88 eV and has electrical resistivity in the range of 1 × 1010 Ω cm. Pb2P2Se6 single crystal samples display a significant photoconductivity response to optical, X-ray, and γ-ray radiation. When tested with a 57Co γ-ray source, Pb2P2Se6 crystals show spectroscopic response and several generated pulse height spectra resolving the 122.1 and 136.5 keV 57Co radiation. The mobility-lifetime product of Pb2P2Se6 is estimated to be ≈3.5 × 10-5 cm2 V-1 for electron carriers. The Pb2P2Se6 compound melts congruently at 812 °C and has robust chemical/physical properties that promise low cost bulk production and detector development. Wide bandgap selenophosphate Pb2P2Se6 is identified as a cost-effective X-ray and γ-ray detector material. The crystal growth of Pb2P2Se6 and characterizations in terms of its optical, electrical, thermal, and mechanical properties are reported. A Pb2P2Se6 single crystal detector is able to resolve 57Co radiation.
KW - chalcogenides
KW - chalcophosphate
KW - gamma-ray detectors
KW - semiconductors
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U2 - 10.1002/adfm.201501826
DO - 10.1002/adfm.201501826
M3 - Article
VL - 25
SP - 4874
EP - 4881
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 30
ER -