Abstract
Colloidal nanocrystals (NCs) of lead chalcogenides are a promising class of tunable infrared materials for applications in devices such as photodetectors and solar cells. Such devices typically employ electronic materials in which charge carrier concentrations are manipulated through "doping;" however, persistent electronic doping of these NCs remains a challenge. Here, we demonstrate that heavily doped n-type PbSe and PbS NCs can be realized utilizing ground-state electron transfer from cobaltocene. This allows injecting up to eight electrons per NC into the band-edge state and maintaining the doping level for at least a month at room temperature. Doping is confirmed by inter-and intra-band optical absorption, as well as by carrier dynamics. Finally, FET measurements of doped NC films and the demonstration of a p-n diode provide additional evidence that the developed doping procedure allows for persistent incorporation of electrons into the quantum-confined NC states.
| Original language | English |
|---|---|
| Article number | 2004 |
| Journal | Scientific Reports |
| Volume | 3 |
| DOIs | |
| Publication status | Published - 2013 |
Fingerprint
ASJC Scopus subject areas
- General
Cite this
Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene. / Koh, Weon Kyu; Koposov, Alexey Y.; Stewart, John T.; Pal, Bhola N.; Robel, Istvan; Pietryga, Jeffrey M.; Klimov, Victor I.
In: Scientific Reports, Vol. 3, 2004, 2013.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene
AU - Koh, Weon Kyu
AU - Koposov, Alexey Y.
AU - Stewart, John T.
AU - Pal, Bhola N.
AU - Robel, Istvan
AU - Pietryga, Jeffrey M.
AU - Klimov, Victor I
PY - 2013
Y1 - 2013
N2 - Colloidal nanocrystals (NCs) of lead chalcogenides are a promising class of tunable infrared materials for applications in devices such as photodetectors and solar cells. Such devices typically employ electronic materials in which charge carrier concentrations are manipulated through "doping;" however, persistent electronic doping of these NCs remains a challenge. Here, we demonstrate that heavily doped n-type PbSe and PbS NCs can be realized utilizing ground-state electron transfer from cobaltocene. This allows injecting up to eight electrons per NC into the band-edge state and maintaining the doping level for at least a month at room temperature. Doping is confirmed by inter-and intra-band optical absorption, as well as by carrier dynamics. Finally, FET measurements of doped NC films and the demonstration of a p-n diode provide additional evidence that the developed doping procedure allows for persistent incorporation of electrons into the quantum-confined NC states.
AB - Colloidal nanocrystals (NCs) of lead chalcogenides are a promising class of tunable infrared materials for applications in devices such as photodetectors and solar cells. Such devices typically employ electronic materials in which charge carrier concentrations are manipulated through "doping;" however, persistent electronic doping of these NCs remains a challenge. Here, we demonstrate that heavily doped n-type PbSe and PbS NCs can be realized utilizing ground-state electron transfer from cobaltocene. This allows injecting up to eight electrons per NC into the band-edge state and maintaining the doping level for at least a month at room temperature. Doping is confirmed by inter-and intra-band optical absorption, as well as by carrier dynamics. Finally, FET measurements of doped NC films and the demonstration of a p-n diode provide additional evidence that the developed doping procedure allows for persistent incorporation of electrons into the quantum-confined NC states.
UR - http://www.scopus.com/inward/record.url?scp=84879610630&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879610630&partnerID=8YFLogxK
U2 - 10.1038/srep02004
DO - 10.1038/srep02004
M3 - Article
C2 - 23774224
AN - SCOPUS:84879610630
VL - 3
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
M1 - 2004
ER -