Heavily doped n-type PbSe and PbS nanocrystals using ground-state charge transfer from cobaltocene

Weon Kyu Koh, Alexey Y. Koposov, John T. Stewart, Bhola N. Pal, Istvan Robel, Jeffrey M. Pietryga, Victor I. Klimov

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Abstract

Colloidal nanocrystals (NCs) of lead chalcogenides are a promising class of tunable infrared materials for applications in devices such as photodetectors and solar cells. Such devices typically employ electronic materials in which charge carrier concentrations are manipulated through "doping;" however, persistent electronic doping of these NCs remains a challenge. Here, we demonstrate that heavily doped n-type PbSe and PbS NCs can be realized utilizing ground-state electron transfer from cobaltocene. This allows injecting up to eight electrons per NC into the band-edge state and maintaining the doping level for at least a month at room temperature. Doping is confirmed by inter-and intra-band optical absorption, as well as by carrier dynamics. Finally, FET measurements of doped NC films and the demonstration of a p-n diode provide additional evidence that the developed doping procedure allows for persistent incorporation of electrons into the quantum-confined NC states.

Original languageEnglish
Article number2004
JournalScientific reports
Volume3
DOIs
Publication statusPublished - Jul 8 2013

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