Helium ion beam lithography (HIBL) using HafSOx as the resist

Feixiang Luo; Viacheslav Manichev; Mengjun Li; Gavin Mitchson; Boris Yakshinskiy; Torgny Gustafsson; David Johnson; Eric Garfunkel

doi:10.1117/12.2219239

Helium ion beam lithography (HIBL) using HafSOx as the resist

Feixiang Luo, Viacheslav Manichev, Mengjun Li, Gavin Mitchson, Boris Yakshinskiy, Torgny Gustafsson, David Johnson, Eric Garfunkel

Rutgers University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)_{4-2x 2y}(O2)_x(SO₄)_yqH₂O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D₁₀₀ ∼ 2-4 μC/cm². We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions' energy loss.

Original language	English
Title of host publication	Advances in Patterning Materials and Processes XXXIII
Publisher	SPIE
Volume	9779
ISBN (Electronic)	9781510600140
DOIs	https://doi.org/10.1117/12.2219239
Publication status	Published - 2016
Event	Advances in Patterning Materials and Processes XXXIII - San Jose, United States Duration: Feb 22 2016 → Feb 25 2016

Other

Other	Advances in Patterning Materials and Processes XXXIII
Country	United States
City	San Jose
Period	2/22/16 → 2/25/16

Keywords

Critical dimension
HafSOx
HIBL
Line-edge roughness
Monte Carlo simulation
Secondary electrons
Sensitivity

ASJC Scopus subject areas

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Cite this

Luo, F., Manichev, V., Li, M., Mitchson, G., Yakshinskiy, B., Gustafsson, T., Johnson, D., & Garfunkel, E. (2016). Helium ion beam lithography (HIBL) using HafSOx as the resist. In Advances in Patterning Materials and Processes XXXIII (Vol. 9779). [977928] SPIE. https://doi.org/10.1117/12.2219239

Helium ion beam lithography (HIBL) using HafSOx as the resist. / Luo, Feixiang; Manichev, Viacheslav; Li, Mengjun; Mitchson, Gavin; Yakshinskiy, Boris; Gustafsson, Torgny; Johnson, David; Garfunkel, Eric.

Advances in Patterning Materials and Processes XXXIII. Vol. 9779 SPIE, 2016. 977928.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Luo, F, Manichev, V, Li, M, Mitchson, G, Yakshinskiy, B, Gustafsson, T, Johnson, D & Garfunkel, E 2016, Helium ion beam lithography (HIBL) using HafSOx as the resist. in Advances in Patterning Materials and Processes XXXIII. vol. 9779, 977928, SPIE, Advances in Patterning Materials and Processes XXXIII, San Jose, United States, 2/22/16. https://doi.org/10.1117/12.2219239

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AB - Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4-2x 2y(O2)x(SO4)yqH2O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D100 ∼ 2-4 μC/cm2. We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions' energy loss.

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