Abstract
Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4-2x 2y(O2)x(SO4)yqH2O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D100 ∼ 2-4 μC/cm2. We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions' energy loss.
| Original language | English |
|---|---|
| Title of host publication | Advances in Patterning Materials and Processes XXXIII |
| Publisher | SPIE |
| Volume | 9779 |
| ISBN (Electronic) | 9781510600140 |
| DOIs | |
| Publication status | Published - 2016 |
| Event | Advances in Patterning Materials and Processes XXXIII - San Jose, United States Duration: Feb 22 2016 → Feb 25 2016 |
Other
| Other | Advances in Patterning Materials and Processes XXXIII |
|---|---|
| Country | United States |
| City | San Jose |
| Period | 2/22/16 → 2/25/16 |
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Keywords
- Critical dimension
- HafSOx
- HIBL
- Line-edge roughness
- Monte Carlo simulation
- Secondary electrons
- Sensitivity
ASJC Scopus subject areas
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Helium ion beam lithography (HIBL) using HafSOx as the resist. / Luo, Feixiang; Manichev, Viacheslav; Li, Mengjun; Mitchson, Gavin; Yakshinskiy, Boris; Gustafsson, Torgny; Johnson, David; Garfunkel, Eric.
Advances in Patterning Materials and Processes XXXIII. Vol. 9779 SPIE, 2016. 977928.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Helium ion beam lithography (HIBL) using HafSOx as the resist
AU - Luo, Feixiang
AU - Manichev, Viacheslav
AU - Li, Mengjun
AU - Mitchson, Gavin
AU - Yakshinskiy, Boris
AU - Gustafsson, Torgny
AU - Johnson, David
AU - Garfunkel, Eric
PY - 2016
Y1 - 2016
N2 - Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4-2x 2y(O2)x(SO4)yqH2O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D100 ∼ 2-4 μC/cm2. We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions' energy loss.
AB - Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4-2x 2y(O2)x(SO4)yqH2O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D100 ∼ 2-4 μC/cm2. We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions' energy loss.
KW - Critical dimension
KW - HafSOx
KW - HIBL
KW - Line-edge roughness
KW - Monte Carlo simulation
KW - Secondary electrons
KW - Sensitivity
UR - http://www.scopus.com/inward/record.url?scp=84974597132&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84974597132&partnerID=8YFLogxK
U2 - 10.1117/12.2219239
DO - 10.1117/12.2219239
M3 - Conference contribution
AN - SCOPUS:84974597132
VL - 9779
BT - Advances in Patterning Materials and Processes XXXIII
PB - SPIE
ER -