@inproceedings{3697d0ac974046afb29615fd25fd50ac,
title = "Helium ion beam lithography (HIBL) using HafSOx as the resist",
abstract = "Helium ion beam lithography (HIBL) is a novel alternative lithographic technique with the capacity of fabricating highresolution and high-density features. Only limited research has been performed exploring HIBL to date. HafSOx (Hf(OH)4-2x 2y(O2)x(SO4)yqH2O) is a negative-tone inorganic resist that is one of several candidate resist materials for extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL), and has been demonstrated to show high resolution, moderate sensitivity and low line-edge roughness (LER) in both EUVL and EBL. To date, no ion beam lithography work on HafSOx has been reported. In this study, we tested HafSOx as an HIBL resist and achieved a high sensitivity compared with EBL with a turn-on dose D100 ∼ 2-4 μC/cm2. We obtained sub-10 nm line widths with low LER. A simple Monte Carlo simulation suggests that ionizing excitation accounts for most of the incident He ions' energy loss.",
keywords = "Critical dimension, HIBL, HafSOx, Line-edge roughness, Monte Carlo simulation, Secondary electrons, Sensitivity",
author = "Feixiang Luo and Viacheslav Manichev and Mengjun Li and Gavin Mitchson and Boris Yakshinskiy and Torgny Gustafsson and David Johnson and Eric Garfunkel",
note = "Publisher Copyright: {\textcopyright} 2016 SPIE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.; Advances in Patterning Materials and Processes XXXIII ; Conference date: 22-02-2016 Through 25-02-2016",
year = "2016",
doi = "10.1117/12.2219239",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Younkin, {Todd R.} and Hohle, {Christoph K.}",
booktitle = "Advances in Patterning Materials and Processes XXXIII",
}