Heteroepitaxial growth of Ba1-xSrxTiO 3/YBa2Cu3O7-x by plasma-enhanced metalorganic chemical vapor deposition

C. S. Chern, S. Liang, Z. Q. Shi, S. Yoon, A. Safari, P. Lu, B. H. Kear, B. H. Goodreau, Tobin J Marks, S. Y. Hou

Research output: Contribution to journalArticle

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Abstract

Epitaxial Ba1-xSrxTiO3(BST)/YBa 2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that 〈100〉 oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSr xTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba 1-xSrxTiO3 films had Curie temperatures of about 30°C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr 0.25TiO3 and Ba0.8Sr0.2TiO 3. The structural and electrical properties of the Ba 1-xSrxTiO3/YBa2Cu3O 7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.

Original languageEnglish
Pages (from-to)3181-3183
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number23
DOIs
Publication statusPublished - 1994

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metalorganic chemical vapor deposition
x ray diffraction
electrical properties
temperature measurement
dielectric properties
Curie temperature
backscattering
leakage
capacitance
permittivity
current density
transmission electron microscopy
electrodes
oxides
high resolution
electric potential
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chern, C. S., Liang, S., Shi, Z. Q., Yoon, S., Safari, A., Lu, P., ... Hou, S. Y. (1994). Heteroepitaxial growth of Ba1-xSrxTiO 3/YBa2Cu3O7-x by plasma-enhanced metalorganic chemical vapor deposition. Applied Physics Letters, 64(23), 3181-3183. https://doi.org/10.1063/1.111332

Heteroepitaxial growth of Ba1-xSrxTiO 3/YBa2Cu3O7-x by plasma-enhanced metalorganic chemical vapor deposition. / Chern, C. S.; Liang, S.; Shi, Z. Q.; Yoon, S.; Safari, A.; Lu, P.; Kear, B. H.; Goodreau, B. H.; Marks, Tobin J; Hou, S. Y.

In: Applied Physics Letters, Vol. 64, No. 23, 1994, p. 3181-3183.

Research output: Contribution to journalArticle

Chern, CS, Liang, S, Shi, ZQ, Yoon, S, Safari, A, Lu, P, Kear, BH, Goodreau, BH, Marks, TJ & Hou, SY 1994, 'Heteroepitaxial growth of Ba1-xSrxTiO 3/YBa2Cu3O7-x by plasma-enhanced metalorganic chemical vapor deposition', Applied Physics Letters, vol. 64, no. 23, pp. 3181-3183. https://doi.org/10.1063/1.111332
Chern, C. S. ; Liang, S. ; Shi, Z. Q. ; Yoon, S. ; Safari, A. ; Lu, P. ; Kear, B. H. ; Goodreau, B. H. ; Marks, Tobin J ; Hou, S. Y. / Heteroepitaxial growth of Ba1-xSrxTiO 3/YBa2Cu3O7-x by plasma-enhanced metalorganic chemical vapor deposition. In: Applied Physics Letters. 1994 ; Vol. 64, No. 23. pp. 3181-3183.
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