Heteroepitaxial oxide structures grown by pulsed organometallic beam epitaxy (POMBE)

Forrest H. Kaatz, J. Y. Dai, P. R. Markworth, D. B. Buchholz, Robert P. H. Chang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We describe the design, construction, and use of pulsed organometallic beam epitaxy (POMBE), a plasma-enhanced CVD technique to grow oxide heterostructures. Solid-state precursors are sampled in the gas line via quartz crystal monitors and injected into the O2 microwave plasma with pulse time durations of a few seconds. The precursors are injected through pneumatic valves in a heated valve box. The valves and microwave power are under computer control. The microwave plasma is ramped between a forward power of 600 and 1500W to improve film epitaxy. We use POMBE to grow epitaxial BaYZrO3/MgO, Y-ZrO2/LAO, and YBa2Cu3O7/Y-ZrO2/LAO structures. The processing parameters leading to the heteroepitaxy are described. The best epitaxy results in X-ray FWHM of 0.12°, 0.38°, and 0.87° for BaYZrO3, Y-ZrO2, and YBa2Cu3O7, respectively. We show the advantages of the POMBE technique over that of plasma-enhanced CVD. Selected TEM results of the heteroepitaxial oxide structures are shown, and the role that temperature plays in the oxide epitaxy. The epitaxy of BaYZrO3 is the first described in the literature, and that of YSZ is among the best reported.

Original languageEnglish
Pages (from-to)509-515
Number of pages7
JournalJournal of Crystal Growth
Volume247
Issue number3-4
DOIs
Publication statusPublished - Jan 2003

Fingerprint

Organometallics
Epitaxial growth
epitaxy
Oxides
oxides
microwaves
Microwaves
Plasma enhanced chemical vapor deposition
vapor deposition
Plasmas
pneumatics
Quartz
yttria-stabilized zirconia
quartz crystals
Computer control
Full width at half maximum
boxes
monitors
Pneumatics
Heterojunctions

Keywords

  • A3. Organometallic vapor phase epitaxy
  • B1. Oxides

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Heteroepitaxial oxide structures grown by pulsed organometallic beam epitaxy (POMBE). / Kaatz, Forrest H.; Dai, J. Y.; Markworth, P. R.; Buchholz, D. B.; Chang, Robert P. H.

In: Journal of Crystal Growth, Vol. 247, No. 3-4, 01.2003, p. 509-515.

Research output: Contribution to journalArticle

Kaatz, Forrest H. ; Dai, J. Y. ; Markworth, P. R. ; Buchholz, D. B. ; Chang, Robert P. H. / Heteroepitaxial oxide structures grown by pulsed organometallic beam epitaxy (POMBE). In: Journal of Crystal Growth. 2003 ; Vol. 247, No. 3-4. pp. 509-515.
@article{73ab6eb290494f5089fd15d083dbae12,
title = "Heteroepitaxial oxide structures grown by pulsed organometallic beam epitaxy (POMBE)",
abstract = "We describe the design, construction, and use of pulsed organometallic beam epitaxy (POMBE), a plasma-enhanced CVD technique to grow oxide heterostructures. Solid-state precursors are sampled in the gas line via quartz crystal monitors and injected into the O2 microwave plasma with pulse time durations of a few seconds. The precursors are injected through pneumatic valves in a heated valve box. The valves and microwave power are under computer control. The microwave plasma is ramped between a forward power of 600 and 1500W to improve film epitaxy. We use POMBE to grow epitaxial BaYZrO3/MgO, Y-ZrO2/LAO, and YBa2Cu3O7/Y-ZrO2/LAO structures. The processing parameters leading to the heteroepitaxy are described. The best epitaxy results in X-ray FWHM of 0.12°, 0.38°, and 0.87° for BaYZrO3, Y-ZrO2, and YBa2Cu3O7, respectively. We show the advantages of the POMBE technique over that of plasma-enhanced CVD. Selected TEM results of the heteroepitaxial oxide structures are shown, and the role that temperature plays in the oxide epitaxy. The epitaxy of BaYZrO3 is the first described in the literature, and that of YSZ is among the best reported.",
keywords = "A3. Organometallic vapor phase epitaxy, B1. Oxides",
author = "Kaatz, {Forrest H.} and Dai, {J. Y.} and Markworth, {P. R.} and Buchholz, {D. B.} and Chang, {Robert P. H.}",
year = "2003",
month = "1",
doi = "10.1016/S0022-0248(02)01916-4",
language = "English",
volume = "247",
pages = "509--515",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "3-4",

}

TY - JOUR

T1 - Heteroepitaxial oxide structures grown by pulsed organometallic beam epitaxy (POMBE)

AU - Kaatz, Forrest H.

AU - Dai, J. Y.

AU - Markworth, P. R.

AU - Buchholz, D. B.

AU - Chang, Robert P. H.

PY - 2003/1

Y1 - 2003/1

N2 - We describe the design, construction, and use of pulsed organometallic beam epitaxy (POMBE), a plasma-enhanced CVD technique to grow oxide heterostructures. Solid-state precursors are sampled in the gas line via quartz crystal monitors and injected into the O2 microwave plasma with pulse time durations of a few seconds. The precursors are injected through pneumatic valves in a heated valve box. The valves and microwave power are under computer control. The microwave plasma is ramped between a forward power of 600 and 1500W to improve film epitaxy. We use POMBE to grow epitaxial BaYZrO3/MgO, Y-ZrO2/LAO, and YBa2Cu3O7/Y-ZrO2/LAO structures. The processing parameters leading to the heteroepitaxy are described. The best epitaxy results in X-ray FWHM of 0.12°, 0.38°, and 0.87° for BaYZrO3, Y-ZrO2, and YBa2Cu3O7, respectively. We show the advantages of the POMBE technique over that of plasma-enhanced CVD. Selected TEM results of the heteroepitaxial oxide structures are shown, and the role that temperature plays in the oxide epitaxy. The epitaxy of BaYZrO3 is the first described in the literature, and that of YSZ is among the best reported.

AB - We describe the design, construction, and use of pulsed organometallic beam epitaxy (POMBE), a plasma-enhanced CVD technique to grow oxide heterostructures. Solid-state precursors are sampled in the gas line via quartz crystal monitors and injected into the O2 microwave plasma with pulse time durations of a few seconds. The precursors are injected through pneumatic valves in a heated valve box. The valves and microwave power are under computer control. The microwave plasma is ramped between a forward power of 600 and 1500W to improve film epitaxy. We use POMBE to grow epitaxial BaYZrO3/MgO, Y-ZrO2/LAO, and YBa2Cu3O7/Y-ZrO2/LAO structures. The processing parameters leading to the heteroepitaxy are described. The best epitaxy results in X-ray FWHM of 0.12°, 0.38°, and 0.87° for BaYZrO3, Y-ZrO2, and YBa2Cu3O7, respectively. We show the advantages of the POMBE technique over that of plasma-enhanced CVD. Selected TEM results of the heteroepitaxial oxide structures are shown, and the role that temperature plays in the oxide epitaxy. The epitaxy of BaYZrO3 is the first described in the literature, and that of YSZ is among the best reported.

KW - A3. Organometallic vapor phase epitaxy

KW - B1. Oxides

UR - http://www.scopus.com/inward/record.url?scp=0037213532&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037213532&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)01916-4

DO - 10.1016/S0022-0248(02)01916-4

M3 - Article

VL - 247

SP - 509

EP - 515

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 3-4

ER -