Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition

Martin M. Frank, Glen D. Wilk, Dmitri Starodub, Torgny Gustafsson, Eric Garfunkel, Yves J. Chabal, John Grazul, David A. Muller

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Abstract

High-performance metal-oxide-semiconductor field effect transistors (MOSFETs) on III-V semiconductors have long proven elusive. High-permittivity (high- κ) gate dielectrics may enable their fabrication. We have studied hafnium oxide and aluminum oxide grown on gallium arsenide by atomic layer deposition. As-deposited films are continuous and predominantly amorphous. A native oxide remains intact underneath Hf O2 during growth, while thinning occurs during Al2 O3 deposition. Hydrofluoric acid etching prior to growth minimizes the final interlayer thickness. Thermal treatments at ~600 °C decompose arsenic oxides and remove interfacial oxygen. These observations explain the improved electrical quality and increased gate stack capacitance after thermal treatments.

Original languageEnglish
Article number152904
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number15
DOIs
Publication statusPublished - 2005

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Frank, M. M., Wilk, G. D., Starodub, D., Gustafsson, T., Garfunkel, E., Chabal, Y. J., ... Muller, D. A. (2005). Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition. Applied Physics Letters, 86(15), 1-3. [152904]. https://doi.org/10.1063/1.1899745