Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition

Martin M. Frank, Glen D. Wilk, Dmitri Starodub, Torgny Gustafsson, Eric Garfunkel, Yves J. Chabal, John Grazul, David A. Muller

Research output: Contribution to journalArticle

295 Citations (Scopus)

Abstract

High-performance metal-oxide-semiconductor field effect transistors (MOSFETs) on III-V semiconductors have long proven elusive. High-permittivity (high- κ) gate dielectrics may enable their fabrication. We have studied hafnium oxide and aluminum oxide grown on gallium arsenide by atomic layer deposition. As-deposited films are continuous and predominantly amorphous. A native oxide remains intact underneath Hf O2 during growth, while thinning occurs during Al2 O3 deposition. Hydrofluoric acid etching prior to growth minimizes the final interlayer thickness. Thermal treatments at ~600 °C decompose arsenic oxides and remove interfacial oxygen. These observations explain the improved electrical quality and increased gate stack capacitance after thermal treatments.

Original languageEnglish
Article number152904
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number15
DOIs
Publication statusPublished - 2005

Fingerprint

atomic layer epitaxy
oxides
hafnium oxides
hydrofluoric acid
arsenic
metal oxide semiconductors
gallium
interlayers
field effect transistors
aluminum oxides
capacitance
etching
permittivity
fabrication
oxygen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Frank, M. M., Wilk, G. D., Starodub, D., Gustafsson, T., Garfunkel, E., Chabal, Y. J., ... Muller, D. A. (2005). Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition. Applied Physics Letters, 86(15), 1-3. [152904]. https://doi.org/10.1063/1.1899745

Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition. / Frank, Martin M.; Wilk, Glen D.; Starodub, Dmitri; Gustafsson, Torgny; Garfunkel, Eric; Chabal, Yves J.; Grazul, John; Muller, David A.

In: Applied Physics Letters, Vol. 86, No. 15, 152904, 2005, p. 1-3.

Research output: Contribution to journalArticle

Frank, MM, Wilk, GD, Starodub, D, Gustafsson, T, Garfunkel, E, Chabal, YJ, Grazul, J & Muller, DA 2005, 'Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition', Applied Physics Letters, vol. 86, no. 15, 152904, pp. 1-3. https://doi.org/10.1063/1.1899745
Frank, Martin M. ; Wilk, Glen D. ; Starodub, Dmitri ; Gustafsson, Torgny ; Garfunkel, Eric ; Chabal, Yves J. ; Grazul, John ; Muller, David A. / Hf O 2 and Al 2 O 3 gate dielectrics on GaAs grown by atomic layer deposition. In: Applied Physics Letters. 2005 ; Vol. 86, No. 15. pp. 1-3.
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