Channel mobility of >100cm 2 V -1 s -1 has been obtained on enhancement mode 4H-SiC MOSFETs using an antimony (Sb) doped surface channel in conjunction with nitric oxide (NO) postoxidation annealing. Temperature dependence of the channel mobility indicates that Sb, being an n-type dopant, reduces the surface electric field while the NO anneal reduces the interface trap density, thereby improving the channel mobility. This letter highlights the importance of semiconductor/dielectric materials processes that reduce the transverse surface electric field for improved channel mobility in 4H-SiC MOSFETs.
- 4H-SiC MOSFET
- mobility counter-doping
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering