High channel mobility 4H-SiC MOSFETs by antimony counter-doping

Aaron Modic, Gang Liu, Ayayi C. Ahyi, Yuming Zhou, Pingye Xu, Michael C. Hamilton, John R. Williams, Leonard C Feldman, Sarit Dhar

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Channel mobility of >100cm 2 V -1 s -1 has been obtained on enhancement mode 4H-SiC MOSFETs using an antimony (Sb) doped surface channel in conjunction with nitric oxide (NO) postoxidation annealing. Temperature dependence of the channel mobility indicates that Sb, being an n-type dopant, reduces the surface electric field while the NO anneal reduces the interface trap density, thereby improving the channel mobility. This letter highlights the importance of semiconductor/dielectric materials processes that reduce the transverse surface electric field for improved channel mobility in 4H-SiC MOSFETs.

Original languageEnglish
Article number6867347
Pages (from-to)894-896
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number9
DOIs
Publication statusPublished - 2014

Fingerprint

Antimony
Nitric oxide
Doping (additives)
Nitric Oxide
Electric fields
Annealing
Semiconductor materials
Temperature

Keywords

  • 4H-SiC MOSFET
  • antimony
  • mobility counter-doping

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Modic, A., Liu, G., Ahyi, A. C., Zhou, Y., Xu, P., Hamilton, M. C., ... Dhar, S. (2014). High channel mobility 4H-SiC MOSFETs by antimony counter-doping. IEEE Electron Device Letters, 35(9), 894-896. [6867347]. https://doi.org/10.1109/LED.2014.2336592

High channel mobility 4H-SiC MOSFETs by antimony counter-doping. / Modic, Aaron; Liu, Gang; Ahyi, Ayayi C.; Zhou, Yuming; Xu, Pingye; Hamilton, Michael C.; Williams, John R.; Feldman, Leonard C; Dhar, Sarit.

In: IEEE Electron Device Letters, Vol. 35, No. 9, 6867347, 2014, p. 894-896.

Research output: Contribution to journalArticle

Modic, A, Liu, G, Ahyi, AC, Zhou, Y, Xu, P, Hamilton, MC, Williams, JR, Feldman, LC & Dhar, S 2014, 'High channel mobility 4H-SiC MOSFETs by antimony counter-doping', IEEE Electron Device Letters, vol. 35, no. 9, 6867347, pp. 894-896. https://doi.org/10.1109/LED.2014.2336592
Modic A, Liu G, Ahyi AC, Zhou Y, Xu P, Hamilton MC et al. High channel mobility 4H-SiC MOSFETs by antimony counter-doping. IEEE Electron Device Letters. 2014;35(9):894-896. 6867347. https://doi.org/10.1109/LED.2014.2336592
Modic, Aaron ; Liu, Gang ; Ahyi, Ayayi C. ; Zhou, Yuming ; Xu, Pingye ; Hamilton, Michael C. ; Williams, John R. ; Feldman, Leonard C ; Dhar, Sarit. / High channel mobility 4H-SiC MOSFETs by antimony counter-doping. In: IEEE Electron Device Letters. 2014 ; Vol. 35, No. 9. pp. 894-896.
@article{b885284a89ff456b865bc2ffe1d81c46,
title = "High channel mobility 4H-SiC MOSFETs by antimony counter-doping",
abstract = "Channel mobility of >100cm 2 V -1 s -1 has been obtained on enhancement mode 4H-SiC MOSFETs using an antimony (Sb) doped surface channel in conjunction with nitric oxide (NO) postoxidation annealing. Temperature dependence of the channel mobility indicates that Sb, being an n-type dopant, reduces the surface electric field while the NO anneal reduces the interface trap density, thereby improving the channel mobility. This letter highlights the importance of semiconductor/dielectric materials processes that reduce the transverse surface electric field for improved channel mobility in 4H-SiC MOSFETs.",
keywords = "4H-SiC MOSFET, antimony, mobility counter-doping",
author = "Aaron Modic and Gang Liu and Ahyi, {Ayayi C.} and Yuming Zhou and Pingye Xu and Hamilton, {Michael C.} and Williams, {John R.} and Feldman, {Leonard C} and Sarit Dhar",
year = "2014",
doi = "10.1109/LED.2014.2336592",
language = "English",
volume = "35",
pages = "894--896",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",

}

TY - JOUR

T1 - High channel mobility 4H-SiC MOSFETs by antimony counter-doping

AU - Modic, Aaron

AU - Liu, Gang

AU - Ahyi, Ayayi C.

AU - Zhou, Yuming

AU - Xu, Pingye

AU - Hamilton, Michael C.

AU - Williams, John R.

AU - Feldman, Leonard C

AU - Dhar, Sarit

PY - 2014

Y1 - 2014

N2 - Channel mobility of >100cm 2 V -1 s -1 has been obtained on enhancement mode 4H-SiC MOSFETs using an antimony (Sb) doped surface channel in conjunction with nitric oxide (NO) postoxidation annealing. Temperature dependence of the channel mobility indicates that Sb, being an n-type dopant, reduces the surface electric field while the NO anneal reduces the interface trap density, thereby improving the channel mobility. This letter highlights the importance of semiconductor/dielectric materials processes that reduce the transverse surface electric field for improved channel mobility in 4H-SiC MOSFETs.

AB - Channel mobility of >100cm 2 V -1 s -1 has been obtained on enhancement mode 4H-SiC MOSFETs using an antimony (Sb) doped surface channel in conjunction with nitric oxide (NO) postoxidation annealing. Temperature dependence of the channel mobility indicates that Sb, being an n-type dopant, reduces the surface electric field while the NO anneal reduces the interface trap density, thereby improving the channel mobility. This letter highlights the importance of semiconductor/dielectric materials processes that reduce the transverse surface electric field for improved channel mobility in 4H-SiC MOSFETs.

KW - 4H-SiC MOSFET

KW - antimony

KW - mobility counter-doping

UR - http://www.scopus.com/inward/record.url?scp=84906946095&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84906946095&partnerID=8YFLogxK

U2 - 10.1109/LED.2014.2336592

DO - 10.1109/LED.2014.2336592

M3 - Article

VL - 35

SP - 894

EP - 896

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

M1 - 6867347

ER -