High channel mobility 4H-SiC MOSFETs by antimony counter-doping

Aaron Modic, Gang Liu, Ayayi C. Ahyi, Yuming Zhou, Pingye Xu, Michael C. Hamilton, John R. Williams, Leonard C. Feldman, Sarit Dhar

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Channel mobility of >100cm 2 V -1 s -1 has been obtained on enhancement mode 4H-SiC MOSFETs using an antimony (Sb) doped surface channel in conjunction with nitric oxide (NO) postoxidation annealing. Temperature dependence of the channel mobility indicates that Sb, being an n-type dopant, reduces the surface electric field while the NO anneal reduces the interface trap density, thereby improving the channel mobility. This letter highlights the importance of semiconductor/dielectric materials processes that reduce the transverse surface electric field for improved channel mobility in 4H-SiC MOSFETs.

Original languageEnglish
Article number6867347
Pages (from-to)894-896
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number9
DOIs
Publication statusPublished - Sep 2014

Keywords

  • 4H-SiC MOSFET
  • antimony
  • mobility counter-doping

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Modic, A., Liu, G., Ahyi, A. C., Zhou, Y., Xu, P., Hamilton, M. C., Williams, J. R., Feldman, L. C., & Dhar, S. (2014). High channel mobility 4H-SiC MOSFETs by antimony counter-doping. IEEE Electron Device Letters, 35(9), 894-896. [6867347]. https://doi.org/10.1109/LED.2014.2336592