Abstract
Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.
| Original language | English |
|---|---|
| Pages (from-to) | 3617-3621 |
| Number of pages | 5 |
| Journal | Advanced Materials |
| Volume | 24 |
| Issue number | 27 |
| DOIs | |
| Publication status | Published - Jul 17 2012 |
Keywords
- core/shell structures
- layer-by-layer films
- patterning
- photoinduced electron transfer
- poly(viologen)
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
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Cite this
Tagliazucchi, M., Amin, V. A., Schneebeli, S. T., Stoddart, J. F., & Weiss, E. A. (2012). High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher. Advanced Materials, 24(27), 3617-3621. https://doi.org/10.1002/adma.201201356