High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher

Mario Tagliazucchi; Victor A. Amin; Severin T. Schneebeli; J. Fraser Stoddart; Emily A. Weiss

doi:10.1002/adma.201201356

High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher

Mario Tagliazucchi, Victor A. Amin, Severin T. Schneebeli, J. Fraser Stoddart, Emily A. Weiss

Northwestern University

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.

Original language	English
Pages (from-to)	3617-3621
Number of pages	5
Journal	Advanced Materials
Volume	24
Issue number	27
DOIs	https://doi.org/10.1002/adma.201201356
Publication status	Published - Jul 17 2012

Keywords

core/shell structures
layer-by-layer films
patterning
photoinduced electron transfer
poly(viologen)

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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abstract = "Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.",

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AU - Tagliazucchi, Mario

AU - Amin, Victor A.

AU - Schneebeli, Severin T.

AU - Stoddart, J. Fraser

AU - Weiss, Emily A.

PY - 2012/7/17

Y1 - 2012/7/17

N2 - Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.

AB - Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.

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KW - layer-by-layer films

KW - patterning

KW - photoinduced electron transfer

KW - poly(viologen)

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High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher

Abstract

Keywords

ASJC Scopus subject areas

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