High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher

Mario Tagliazucchi, Victor A. Amin, Severin T. Schneebeli, J. Fraser Stoddart, Emily A Weiss

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.

Original languageEnglish
Pages (from-to)3617-3621
Number of pages5
JournalAdvanced Materials
Volume24
Issue number27
DOIs
Publication statusPublished - Jul 17 2012

Fingerprint

Semiconductor quantum dots
Charge transfer
Photoluminescence
Degradation
Diffraction
Lighting
Electrons
Air

Keywords

  • core/shell structures
  • layer-by-layer films
  • patterning
  • photoinduced electron transfer
  • poly(viologen)

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher. / Tagliazucchi, Mario; Amin, Victor A.; Schneebeli, Severin T.; Stoddart, J. Fraser; Weiss, Emily A.

In: Advanced Materials, Vol. 24, No. 27, 17.07.2012, p. 3617-3621.

Research output: Contribution to journal › Article

Tagliazucchi, M, Amin, VA, Schneebeli, ST, Stoddart, JF & Weiss, EA 2012, 'High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher', Advanced Materials, vol. 24, no. 27, pp. 3617-3621. https://doi.org/10.1002/adma.201201356
Tagliazucchi M, Amin VA, Schneebeli ST, Stoddart JF, Weiss EA. High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher. Advanced Materials. 2012 Jul 17;24(27):3617-3621. https://doi.org/10.1002/adma.201201356
Tagliazucchi, Mario ; Amin, Victor A. ; Schneebeli, Severin T. ; Stoddart, J. Fraser ; Weiss, Emily A. / High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher. In: Advanced Materials. 2012 ; Vol. 24, No. 27. pp. 3617-3621.
@article{c00bd7642e9a439eb3b132e60dc0cec8,
title = "High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher",
abstract = "Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.",
keywords = "core/shell structures, layer-by-layer films, patterning, photoinduced electron transfer, poly(viologen)",
author = "Mario Tagliazucchi and Amin, {Victor A.} and Schneebeli, {Severin T.} and Stoddart, {J. Fraser} and Weiss, {Emily A}",
year = "2012",
month = "7",
day = "17",
doi = "10.1002/adma.201201356",
language = "English",
volume = "24",
pages = "3617--3621",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "27",

}

TY - JOUR

T1 - High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher

AU - Tagliazucchi, Mario

AU - Amin, Victor A.

AU - Schneebeli, Severin T.

AU - Stoddart, J. Fraser

AU - Weiss, Emily A

PY - 2012/7/17

Y1 - 2012/7/17

N2 - Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.

AB - Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.

KW - core/shell structures

KW - layer-by-layer films

KW - patterning

KW - photoinduced electron transfer

KW - poly(viologen)

UR - http://www.scopus.com/inward/record.url?scp=84863685770&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863685770&partnerID=8YFLogxK

U2 - 10.1002/adma.201201356

DO - 10.1002/adma.201201356

M3 - Article

C2 - 22678816

AN - SCOPUS:84863685770

VL - 24

SP - 3617

EP - 3621

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 27

ER -

Access to Document