Abstract
Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.
Original language | English |
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Pages (from-to) | 3617-3621 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 24 |
Issue number | 27 |
DOIs | |
Publication status | Published - Jul 17 2012 |
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Keywords
- core/shell structures
- layer-by-layer films
- patterning
- photoinduced electron transfer
- poly(viologen)
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
Cite this
High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher. / Tagliazucchi, Mario; Amin, Victor A.; Schneebeli, Severin T.; Stoddart, J. Fraser; Weiss, Emily A.
In: Advanced Materials, Vol. 24, No. 27, 17.07.2012, p. 3617-3621.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher
AU - Tagliazucchi, Mario
AU - Amin, Victor A.
AU - Schneebeli, Severin T.
AU - Stoddart, J. Fraser
AU - Weiss, Emily A
PY - 2012/7/17
Y1 - 2012/7/17
N2 - Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.
AB - Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.
KW - core/shell structures
KW - layer-by-layer films
KW - patterning
KW - photoinduced electron transfer
KW - poly(viologen)
UR - http://www.scopus.com/inward/record.url?scp=84863685770&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863685770&partnerID=8YFLogxK
U2 - 10.1002/adma.201201356
DO - 10.1002/adma.201201356
M3 - Article
C2 - 22678816
AN - SCOPUS:84863685770
VL - 24
SP - 3617
EP - 3621
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 27
ER -