High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher

Mario Tagliazucchi, Victor A. Amin, Severin T. Schneebeli, J. Fraser Stoddart, Emily A Weiss

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Diffraction-limited, high-contrast photopatterning of the photoluminescence of layer-by-layer films comprising CdSe@CdS@ZnS quantum dots and polyviologen is reported. The photoluminescence of the quantum dots is initially quantitatively quenched due to ultrafast photoinduced electron transfer to polyviologen. Photopatterning is achieved by high-power or prolonged illumination in air, which photochemically degrades the polyviologen and thereby restores the photoluminescence of the quantum dots.

Original languageEnglish
Pages (from-to)3617-3621
Number of pages5
JournalAdvanced Materials
Volume24
Issue number27
DOIs
Publication statusPublished - Jul 17 2012

Fingerprint

Semiconductor quantum dots
Charge transfer
Photoluminescence
Degradation
Diffraction
Lighting
Electrons
Air

Keywords

  • core/shell structures
  • layer-by-layer films
  • patterning
  • photoinduced electron transfer
  • poly(viologen)

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher. / Tagliazucchi, Mario; Amin, Victor A.; Schneebeli, Severin T.; Stoddart, J. Fraser; Weiss, Emily A.

In: Advanced Materials, Vol. 24, No. 27, 17.07.2012, p. 3617-3621.

Research output: Contribution to journalArticle

Tagliazucchi, Mario ; Amin, Victor A. ; Schneebeli, Severin T. ; Stoddart, J. Fraser ; Weiss, Emily A. / High-contrast photopatterning of photoluminescence within quantum dot films through degradation of a charge-transfer quencher. In: Advanced Materials. 2012 ; Vol. 24, No. 27. pp. 3617-3621.
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