High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

B. R. Tuttle, S. Dhar, S. H. Ryu, X. Zhu, J. R. Williams, Leonard C Feldman, S. T. Pantelides

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Oxidation of SiC with the incorporation of Na in the gate oxide was recently found to lead to significantly enhanced electron mobilities in the SiC inversion layer but the underlying mechanism has remained elusive. Here, we report a combination of density functional first-principles calculations and experiments. The new findings demonstrate that neutral Na is essentially a spectator impurity that occupies near interfacial interstitial sites and does not interact with the interface or with interfacial defects. Na ions, however, introduce an effective mass hydrogenic impurity band at the edge of the SiC conduction band that can account for the observed effects.

Original languageEnglish
Article number023702
JournalJournal of Applied Physics
Volume109
Issue number2
DOIs
Publication statusPublished - Jan 15 2011

Fingerprint

electron mobility
metal oxide semiconductors
field effect transistors
sodium
impurities
oxides
conduction bands
interstitials
ions
inversions
oxidation
defects

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors. / Tuttle, B. R.; Dhar, S.; Ryu, S. H.; Zhu, X.; Williams, J. R.; Feldman, Leonard C; Pantelides, S. T.

In: Journal of Applied Physics, Vol. 109, No. 2, 023702, 15.01.2011.

Research output: Contribution to journalArticle

Tuttle, B. R. ; Dhar, S. ; Ryu, S. H. ; Zhu, X. ; Williams, J. R. ; Feldman, Leonard C ; Pantelides, S. T. / High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors. In: Journal of Applied Physics. 2011 ; Vol. 109, No. 2.
@article{ee055752fd27429d90d84ca31ab3fb8c,
title = "High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors",
abstract = "Oxidation of SiC with the incorporation of Na in the gate oxide was recently found to lead to significantly enhanced electron mobilities in the SiC inversion layer but the underlying mechanism has remained elusive. Here, we report a combination of density functional first-principles calculations and experiments. The new findings demonstrate that neutral Na is essentially a spectator impurity that occupies near interfacial interstitial sites and does not interact with the interface or with interfacial defects. Na ions, however, introduce an effective mass hydrogenic impurity band at the edge of the SiC conduction band that can account for the observed effects.",
author = "Tuttle, {B. R.} and S. Dhar and Ryu, {S. H.} and X. Zhu and Williams, {J. R.} and Feldman, {Leonard C} and Pantelides, {S. T.}",
year = "2011",
month = "1",
day = "15",
doi = "10.1063/1.3533767",
language = "English",
volume = "109",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors

AU - Tuttle, B. R.

AU - Dhar, S.

AU - Ryu, S. H.

AU - Zhu, X.

AU - Williams, J. R.

AU - Feldman, Leonard C

AU - Pantelides, S. T.

PY - 2011/1/15

Y1 - 2011/1/15

N2 - Oxidation of SiC with the incorporation of Na in the gate oxide was recently found to lead to significantly enhanced electron mobilities in the SiC inversion layer but the underlying mechanism has remained elusive. Here, we report a combination of density functional first-principles calculations and experiments. The new findings demonstrate that neutral Na is essentially a spectator impurity that occupies near interfacial interstitial sites and does not interact with the interface or with interfacial defects. Na ions, however, introduce an effective mass hydrogenic impurity band at the edge of the SiC conduction band that can account for the observed effects.

AB - Oxidation of SiC with the incorporation of Na in the gate oxide was recently found to lead to significantly enhanced electron mobilities in the SiC inversion layer but the underlying mechanism has remained elusive. Here, we report a combination of density functional first-principles calculations and experiments. The new findings demonstrate that neutral Na is essentially a spectator impurity that occupies near interfacial interstitial sites and does not interact with the interface or with interfacial defects. Na ions, however, introduce an effective mass hydrogenic impurity band at the edge of the SiC conduction band that can account for the observed effects.

UR - http://www.scopus.com/inward/record.url?scp=79551680367&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551680367&partnerID=8YFLogxK

U2 - 10.1063/1.3533767

DO - 10.1063/1.3533767

M3 - Article

AN - SCOPUS:79551680367

VL - 109

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

M1 - 023702

ER -