High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors

Toward N-type polythiophenes

Joseph A. Letizia, Antonio Facchetti, Charlotte L. Stern, Mark A Ratner, Tobin J Marks

Research output: Contribution to journalArticle

163 Citations (Scopus)

Abstract

New carbonyl-functionalized quaterthiophenes, 5,5‴-diperfluorophenylcarbonyl-2,2′:5′,2″:5″,2‴-quaterthiophene [DFCO-4T], 5,5‴-diphenyl-2,2′:5′,2″:5″,2‴-quaterthiophene [DPCO-4T], and a polymer having the same basic motif as DFCO-4T, poly{1,4-bis[(3′-n-octyl-2,2′-dithiophene)carbonyl]-2,3,5,6-tetrafluorobenzene} [P(COFCO-4T)], have been synthesized, characterized, and the crystal structures of the molecules determined. Field-effect transistors fabricated with vapor-deposited and solution-cast films of DFCO-4T exhibit very high Ion:Ioff current ratios (up to 108) and electron mobilities up to ∼0.51 and ∼0.25 cm2·V-1·s-1, respectively. Solution-cast blends of P(COFCO-4T) and DFCO-4T (1:1 weight ratio) exhibit an electron mobility of ∼0.01 cm2·V-1·s-1 (Ion:Ioff = 104).

Original languageEnglish
Pages (from-to)13476-13477
Number of pages2
JournalJournal of the American Chemical Society
Volume127
Issue number39
DOIs
Publication statusPublished - Oct 5 2005

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Electron mobility
Field effect transistors
Vapors
Electrons
Ions
Polymers
Crystal structure
Weights and Measures
Molecules
polythiophene
diphenyl
3',4'-deoxypsorospermin-4'-chloro-3'-ol

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

High electron mobility in solution-cast and vapor-deposited phenacyl-quaterthiophene-based field-effect transistors : Toward N-type polythiophenes. / Letizia, Joseph A.; Facchetti, Antonio; Stern, Charlotte L.; Ratner, Mark A; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 127, No. 39, 05.10.2005, p. 13476-13477.

Research output: Contribution to journalArticle

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