High-frequency performance of scaled carbon nanotube array field-effect transistors

Mathias Steiner, Michael Engel, Yu Ming Lin, Yanqing Wu, Keith Jenkins, Damon B. Farmer, Jefford J. Humes, Nathan L. Yoder, Jung Woo T. Seo, Alexander A. Green, Mark C. Hersam, Ralph Krupke, Phaedon Avouris

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76 Citations (Scopus)

Abstract

We report the radio-frequency performance of carbon nanotube array transistors that have been realized through the aligned assembly of highly separated, semiconducting carbon nanotubes on a fully scalable device platform. At a gate length of 100 nm, we observe output current saturation and obtain as-measured, extrinsic current gain and power gain cut-off frequencies, respectively, of 7 GHz and 15 GHz. While the extrinsic current gain is comparable to the state-of-the-art, the extrinsic power gain is improved. The de-embedded, intrinsic current gain and power gain cut-off frequencies of 153 GHz and 30 GHz are the highest values experimentally achieved to date. We analyze the consistency of DC and AC performance parameters and discuss the requirements for future applications of carbon nanotube array transistors in high-frequency electronics.

Original languageEnglish
Article number053123
JournalApplied Physics Letters
Volume101
Issue number5
DOIs
Publication statusPublished - Jul 30 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Steiner, M., Engel, M., Lin, Y. M., Wu, Y., Jenkins, K., Farmer, D. B., Humes, J. J., Yoder, N. L., Seo, J. W. T., Green, A. A., Hersam, M. C., Krupke, R., & Avouris, P. (2012). High-frequency performance of scaled carbon nanotube array field-effect transistors. Applied Physics Letters, 101(5), [053123]. https://doi.org/10.1063/1.4742325