High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition

M. L. Green, D. Brasen, H. Temkin, R. D. Yadvish, T. Boone, Leonard C Feldman, M. Geva, B. E. Spear

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Rapid thermal chemical vapor deposition (RTCVD) is a processing technique that results from the combination of radiant heating lamps and a CVD chamber. It is the ultimate cold-wall CVD reactor and allows one to clean wafers in situ and immediately thereafter to deposit epitaxial layers. Very thin layers (less than 100 Å) can be deposited by either gas or lamp power switching. We report here the growth of high-quality silicon layers, both intrinsic and in situ doped, and devices that were processed from multilayer structures. Heterojunction bipolar transistors (HJBTs) containing 30% Ge in the base layer have been grown, and current gains as high as 300 have been observed. These HJBTs show great promise as microwave transistors. RTCVD processing is a production-worthy technology that will play an important role in the manufacture of future heterostructural devices.

Original languageEnglish
Pages (from-to)107-115
Number of pages9
JournalThin Solid Films
Volume184
Issue number1-2
DOIs
Publication statusPublished - 1990

Fingerprint

Heterojunction bipolar transistors
bipolar transistors
high gain
heterojunctions
Chemical vapor deposition
vapor deposition
Electric lamps
luminaires
Radiant heating
radiant heating
cold walls
Epitaxial layers
Silicon
Processing
laminates
Multilayers
Transistors
transistors
Deposits
chambers

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition. / Green, M. L.; Brasen, D.; Temkin, H.; Yadvish, R. D.; Boone, T.; Feldman, Leonard C; Geva, M.; Spear, B. E.

In: Thin Solid Films, Vol. 184, No. 1-2, 1990, p. 107-115.

Research output: Contribution to journalArticle

Green, ML, Brasen, D, Temkin, H, Yadvish, RD, Boone, T, Feldman, LC, Geva, M & Spear, BE 1990, 'High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition', Thin Solid Films, vol. 184, no. 1-2, pp. 107-115. https://doi.org/10.1016/0040-6090(90)90403-Z
Green, M. L. ; Brasen, D. ; Temkin, H. ; Yadvish, R. D. ; Boone, T. ; Feldman, Leonard C ; Geva, M. ; Spear, B. E. / High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition. In: Thin Solid Films. 1990 ; Vol. 184, No. 1-2. pp. 107-115.
@article{4f397dc139cb4a38b40e250a65b7539f,
title = "High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition",
abstract = "Rapid thermal chemical vapor deposition (RTCVD) is a processing technique that results from the combination of radiant heating lamps and a CVD chamber. It is the ultimate cold-wall CVD reactor and allows one to clean wafers in situ and immediately thereafter to deposit epitaxial layers. Very thin layers (less than 100 {\AA}) can be deposited by either gas or lamp power switching. We report here the growth of high-quality silicon layers, both intrinsic and in situ doped, and devices that were processed from multilayer structures. Heterojunction bipolar transistors (HJBTs) containing 30{\%} Ge in the base layer have been grown, and current gains as high as 300 have been observed. These HJBTs show great promise as microwave transistors. RTCVD processing is a production-worthy technology that will play an important role in the manufacture of future heterostructural devices.",
author = "Green, {M. L.} and D. Brasen and H. Temkin and Yadvish, {R. D.} and T. Boone and Feldman, {Leonard C} and M. Geva and Spear, {B. E.}",
year = "1990",
doi = "10.1016/0040-6090(90)90403-Z",
language = "English",
volume = "184",
pages = "107--115",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition

AU - Green, M. L.

AU - Brasen, D.

AU - Temkin, H.

AU - Yadvish, R. D.

AU - Boone, T.

AU - Feldman, Leonard C

AU - Geva, M.

AU - Spear, B. E.

PY - 1990

Y1 - 1990

N2 - Rapid thermal chemical vapor deposition (RTCVD) is a processing technique that results from the combination of radiant heating lamps and a CVD chamber. It is the ultimate cold-wall CVD reactor and allows one to clean wafers in situ and immediately thereafter to deposit epitaxial layers. Very thin layers (less than 100 Å) can be deposited by either gas or lamp power switching. We report here the growth of high-quality silicon layers, both intrinsic and in situ doped, and devices that were processed from multilayer structures. Heterojunction bipolar transistors (HJBTs) containing 30% Ge in the base layer have been grown, and current gains as high as 300 have been observed. These HJBTs show great promise as microwave transistors. RTCVD processing is a production-worthy technology that will play an important role in the manufacture of future heterostructural devices.

AB - Rapid thermal chemical vapor deposition (RTCVD) is a processing technique that results from the combination of radiant heating lamps and a CVD chamber. It is the ultimate cold-wall CVD reactor and allows one to clean wafers in situ and immediately thereafter to deposit epitaxial layers. Very thin layers (less than 100 Å) can be deposited by either gas or lamp power switching. We report here the growth of high-quality silicon layers, both intrinsic and in situ doped, and devices that were processed from multilayer structures. Heterojunction bipolar transistors (HJBTs) containing 30% Ge in the base layer have been grown, and current gains as high as 300 have been observed. These HJBTs show great promise as microwave transistors. RTCVD processing is a production-worthy technology that will play an important role in the manufacture of future heterostructural devices.

UR - http://www.scopus.com/inward/record.url?scp=0025238189&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025238189&partnerID=8YFLogxK

U2 - 10.1016/0040-6090(90)90403-Z

DO - 10.1016/0040-6090(90)90403-Z

M3 - Article

VL - 184

SP - 107

EP - 115

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -