Abstract
Ultraviolet emission characteristics of cubic (c-) GaN enabled through hexagonal-to-cubic phase transition are reported. Substrate patterning and material growth are shown to affect phase purity and emission characteristics of c-GaN as studied by electron backscatter diffraction, and photo- and cathodoluminescence, respectively. Raman study shows a tensile strain in the c-GaN. Time-resolved photoluminescence reveals c-GaN band edge emission decay time of 11 ps. The ultraviolet emissions from both phases of GaN are linearly polarized in the same direction, which is along the 1120 and 110 directions of hexagonal GaN and c-GaN, respectively. Temperature-dependent (5.7 to 280 K) cathodoluminescence studies reveal an internal quantum efficiency of ∼29% at room temperature along with intrinsic and extrinsic defect energy levels of ∼124 and ∼344 meV, respectively, of the phase-transition c-GaN. Using the IQE value and carrier decay lifetime, a radiative lifetime of 38 ps is extracted. Overall, photonic properties of phase-transition c-GaN and their dependence on substrate patterning and material growth are reported.
| Original language | English |
|---|---|
| Pages (from-to) | 955-963 |
| Number of pages | 9 |
| Journal | ACS Photonics |
| Volume | 5 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 21 2018 |
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Keywords
- cathodoluminescence
- Cubic phase
- electron backscatter diffraction
- gallium nitride
- photoluminescence
- ultraviolet emitter
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biotechnology
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
Cite this
High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100). / Liu, Richard; Schaller, Richard D; Chen, Chang Qiang; Bayram, Can.
In: ACS Photonics, Vol. 5, No. 3, 21.03.2018, p. 955-963.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High Internal Quantum Efficiency Ultraviolet Emission from Phase-Transition Cubic GaN Integrated on Nanopatterned Si(100)
AU - Liu, Richard
AU - Schaller, Richard D
AU - Chen, Chang Qiang
AU - Bayram, Can
PY - 2018/3/21
Y1 - 2018/3/21
N2 - Ultraviolet emission characteristics of cubic (c-) GaN enabled through hexagonal-to-cubic phase transition are reported. Substrate patterning and material growth are shown to affect phase purity and emission characteristics of c-GaN as studied by electron backscatter diffraction, and photo- and cathodoluminescence, respectively. Raman study shows a tensile strain in the c-GaN. Time-resolved photoluminescence reveals c-GaN band edge emission decay time of 11 ps. The ultraviolet emissions from both phases of GaN are linearly polarized in the same direction, which is along the 1120 and 110 directions of hexagonal GaN and c-GaN, respectively. Temperature-dependent (5.7 to 280 K) cathodoluminescence studies reveal an internal quantum efficiency of ∼29% at room temperature along with intrinsic and extrinsic defect energy levels of ∼124 and ∼344 meV, respectively, of the phase-transition c-GaN. Using the IQE value and carrier decay lifetime, a radiative lifetime of 38 ps is extracted. Overall, photonic properties of phase-transition c-GaN and their dependence on substrate patterning and material growth are reported.
AB - Ultraviolet emission characteristics of cubic (c-) GaN enabled through hexagonal-to-cubic phase transition are reported. Substrate patterning and material growth are shown to affect phase purity and emission characteristics of c-GaN as studied by electron backscatter diffraction, and photo- and cathodoluminescence, respectively. Raman study shows a tensile strain in the c-GaN. Time-resolved photoluminescence reveals c-GaN band edge emission decay time of 11 ps. The ultraviolet emissions from both phases of GaN are linearly polarized in the same direction, which is along the 1120 and 110 directions of hexagonal GaN and c-GaN, respectively. Temperature-dependent (5.7 to 280 K) cathodoluminescence studies reveal an internal quantum efficiency of ∼29% at room temperature along with intrinsic and extrinsic defect energy levels of ∼124 and ∼344 meV, respectively, of the phase-transition c-GaN. Using the IQE value and carrier decay lifetime, a radiative lifetime of 38 ps is extracted. Overall, photonic properties of phase-transition c-GaN and their dependence on substrate patterning and material growth are reported.
KW - cathodoluminescence
KW - Cubic phase
KW - electron backscatter diffraction
KW - gallium nitride
KW - photoluminescence
KW - ultraviolet emitter
UR - http://www.scopus.com/inward/record.url?scp=85044274968&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85044274968&partnerID=8YFLogxK
U2 - 10.1021/acsphotonics.7b01231
DO - 10.1021/acsphotonics.7b01231
M3 - Article
AN - SCOPUS:85044274968
VL - 5
SP - 955
EP - 963
JO - ACS Photonics
JF - ACS Photonics
SN - 2330-4022
IS - 3
ER -