High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors

Rocfo Ponce Ortiz, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

601 Citations (Scopus)

Abstract

The importance, development, and implementation of high-k gate dielectrics for modern organic electronics applications have been reported. Insulators or dielectric materials are characterized by the absence of charge transport. Dielectrics are widely used in numerous applications. The most fundamental of these is their use as an insulating layer against electrical conduction. There are specific requirements for gate dielectrics to be used in field-effect transistors. The presence of grain boundaries in thin semiconducting films cannot be neglected, because they can have a significant influence on the measured mobility as well as on the subthreshold slope, and it is related to grain size. The low leakage nanodielectrics have allowed the fabrication of very thin gate dielectrics, which translate into higher capacitances, and enhance the performance of both organic and inorganic FETs. The use of stacked inorganic-organic layers offers a good option because it overcomes the drawback of the poor compatibility of most metal oxides with organic semiconductors and usually reduces the roughness of the dielectric layer.

Original languageEnglish
Pages (from-to)205-239
Number of pages35
JournalChemical Reviews
Volume110
Issue number1
DOIs
Publication statusPublished - Jan 13 2010

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Organic field effect transistors
Gate dielectrics
Field effect transistors
Electric potential
Semiconducting films
Semiconducting organic compounds
Oxides
Charge transfer
Grain boundaries
Capacitance
Electronic equipment
Surface roughness
Metals
Fabrication
Thin films

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors. / Ortiz, Rocfo Ponce; Facchetti, Antonio; Marks, Tobin J.

In: Chemical Reviews, Vol. 110, No. 1, 13.01.2010, p. 205-239.

Research output: Contribution to journalArticle

@article{84d425d5f2cb450b9609b3f834889954,
title = "High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors",
abstract = "The importance, development, and implementation of high-k gate dielectrics for modern organic electronics applications have been reported. Insulators or dielectric materials are characterized by the absence of charge transport. Dielectrics are widely used in numerous applications. The most fundamental of these is their use as an insulating layer against electrical conduction. There are specific requirements for gate dielectrics to be used in field-effect transistors. The presence of grain boundaries in thin semiconducting films cannot be neglected, because they can have a significant influence on the measured mobility as well as on the subthreshold slope, and it is related to grain size. The low leakage nanodielectrics have allowed the fabrication of very thin gate dielectrics, which translate into higher capacitances, and enhance the performance of both organic and inorganic FETs. The use of stacked inorganic-organic layers offers a good option because it overcomes the drawback of the poor compatibility of most metal oxides with organic semiconductors and usually reduces the roughness of the dielectric layer.",
author = "Ortiz, {Rocfo Ponce} and Antonio Facchetti and Marks, {Tobin J}",
year = "2010",
month = "1",
day = "13",
doi = "10.1021/cr9001275",
language = "English",
volume = "110",
pages = "205--239",
journal = "Chemical Reviews",
issn = "0009-2665",
publisher = "American Chemical Society",
number = "1",

}

TY - JOUR

T1 - High-k organic, inorganic, and hybrid dielectrics for low-voltage organic field-effect transistors

AU - Ortiz, Rocfo Ponce

AU - Facchetti, Antonio

AU - Marks, Tobin J

PY - 2010/1/13

Y1 - 2010/1/13

N2 - The importance, development, and implementation of high-k gate dielectrics for modern organic electronics applications have been reported. Insulators or dielectric materials are characterized by the absence of charge transport. Dielectrics are widely used in numerous applications. The most fundamental of these is their use as an insulating layer against electrical conduction. There are specific requirements for gate dielectrics to be used in field-effect transistors. The presence of grain boundaries in thin semiconducting films cannot be neglected, because they can have a significant influence on the measured mobility as well as on the subthreshold slope, and it is related to grain size. The low leakage nanodielectrics have allowed the fabrication of very thin gate dielectrics, which translate into higher capacitances, and enhance the performance of both organic and inorganic FETs. The use of stacked inorganic-organic layers offers a good option because it overcomes the drawback of the poor compatibility of most metal oxides with organic semiconductors and usually reduces the roughness of the dielectric layer.

AB - The importance, development, and implementation of high-k gate dielectrics for modern organic electronics applications have been reported. Insulators or dielectric materials are characterized by the absence of charge transport. Dielectrics are widely used in numerous applications. The most fundamental of these is their use as an insulating layer against electrical conduction. There are specific requirements for gate dielectrics to be used in field-effect transistors. The presence of grain boundaries in thin semiconducting films cannot be neglected, because they can have a significant influence on the measured mobility as well as on the subthreshold slope, and it is related to grain size. The low leakage nanodielectrics have allowed the fabrication of very thin gate dielectrics, which translate into higher capacitances, and enhance the performance of both organic and inorganic FETs. The use of stacked inorganic-organic layers offers a good option because it overcomes the drawback of the poor compatibility of most metal oxides with organic semiconductors and usually reduces the roughness of the dielectric layer.

UR - http://www.scopus.com/inward/record.url?scp=75649122220&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=75649122220&partnerID=8YFLogxK

U2 - 10.1021/cr9001275

DO - 10.1021/cr9001275

M3 - Article

C2 - 19852443

AN - SCOPUS:75649122220

VL - 110

SP - 205

EP - 239

JO - Chemical Reviews

JF - Chemical Reviews

SN - 0009-2665

IS - 1

ER -