High-mobility ambipolar transport in organic light-emitting transistors

Franco Dinelli, Raffaella Capelli, Maria A. Loi, Mauro Murgia, Michele Muccini, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

189 Citations (Scopus)

Abstract

Organic light emitting transistors (OLET) devices with balanced ambipolar transport were obtained by using layered organic structures. The OLETs, based on two-component layered structures having balanced ambipolar transport and mobility, values as large as 3×10-2cm2 V -1s-1. It was found that the combination with the highest mobility and most balanced transport is obtained with DH4T grown in direct contact with the dielectric. DH4T is characterized by a three-dimensional growth pattern with closely adjacent individual crystallites. Morphological analysis by means of confocal PL microscopy indicates that growth compatibility is required to form a continuous interface between the two organic films. The compatibility is crucial for controlling the quality of the interface and the resulting optoelectronic properties of the OLETs.

Original languageEnglish
Pages (from-to)1416-1420
Number of pages5
JournalAdvanced Materials
Volume18
Issue number11
DOIs
Publication statusPublished - Jun 6 2006

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Transistors
Crystallites
Optoelectronic devices
Microscopic examination

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Dinelli, F., Capelli, R., Loi, M. A., Murgia, M., Muccini, M., Facchetti, A., & Marks, T. J. (2006). High-mobility ambipolar transport in organic light-emitting transistors. Advanced Materials, 18(11), 1416-1420. https://doi.org/10.1002/adma.200502164

High-mobility ambipolar transport in organic light-emitting transistors. / Dinelli, Franco; Capelli, Raffaella; Loi, Maria A.; Murgia, Mauro; Muccini, Michele; Facchetti, Antonio; Marks, Tobin J.

In: Advanced Materials, Vol. 18, No. 11, 06.06.2006, p. 1416-1420.

Research output: Contribution to journalArticle

Dinelli, F, Capelli, R, Loi, MA, Murgia, M, Muccini, M, Facchetti, A & Marks, TJ 2006, 'High-mobility ambipolar transport in organic light-emitting transistors', Advanced Materials, vol. 18, no. 11, pp. 1416-1420. https://doi.org/10.1002/adma.200502164
Dinelli F, Capelli R, Loi MA, Murgia M, Muccini M, Facchetti A et al. High-mobility ambipolar transport in organic light-emitting transistors. Advanced Materials. 2006 Jun 6;18(11):1416-1420. https://doi.org/10.1002/adma.200502164
Dinelli, Franco ; Capelli, Raffaella ; Loi, Maria A. ; Murgia, Mauro ; Muccini, Michele ; Facchetti, Antonio ; Marks, Tobin J. / High-mobility ambipolar transport in organic light-emitting transistors. In: Advanced Materials. 2006 ; Vol. 18, No. 11. pp. 1416-1420.
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