High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators

Byungwook Yoo, Taeho Jung, Debarshi Basu, Ananth Dodabalapur, Brooks A. Jones, Antonio Facchetti, Michael R. Wasielewski, Tobin J. Marks

Research output: Contribution to journalArticle

139 Citations (Scopus)

Abstract

The electrical characteristics of bottom-contact organic field-effect transistors fabricated with the air-stable n -type semiconductor N, N′ -bis(n-octyl)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-8C N2) are described. The mobility, threshold voltage, subthreshold swing, and Ion Ioff ratio (VDS =40 V, VG =0∼40 V) are 0.14 cm2 V s, 1.6 V, 2.0 V /decade, and 1.2× 103, respectively. The effect of electrode/dielectric surface treatment on these devices is also examined, with a combination of 1-octadecanethiol and hexamethyldisilazane. Organic complementary five-stage ring oscillators were fabricated using pentacene and PDI-8C N2, and operated at an oscillation frequency of 34 kHz and a propagation delay per stage of 3 μs.

Original languageEnglish
Article number082104
JournalApplied Physics Letters
Volume88
Issue number8
DOIs
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High-mobility bottom-contact n -channel organic transistors and their use in complementary ring oscillators'. Together they form a unique fingerprint.

  • Cite this