High mobility solution-processed n-channel organic thin film transistors

He Yan, Shaofeng Lu, Yan Zheng, Philippe Inagaki, Antonio Facchetti, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

N-channel organic thin-film transistors (OTFTs) based on N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2) were fabricated using different semiconductor film deposition methods, dielectric materials, and device structures. It was found that top -contact OTFTs fabricated on Si-SiO2 substrates with drop-cast or vapor deposited films afford comparable electron mobilities (0.01-0.1 cm2/Vs), much larger than those based on spincoated PDI8-CN2 films (0.001 cm2/Vs). Furthermore, n-channel top-contact TFTs were fabricated using solution-processed PDI8-CN2 films and a UV-curable solution-processed polymeric dielectric. These devices exhibit typical gate leakage currents <1nA for Vgate > 100V, which are negligible compared to the corresponding source/drain currents (> 0.1mA). OTFTs tested in ambient exhibit electron mobilities as high as 0.05-0.2 cm 2/Vs and Ion:Ioff ∼ 105. Furthermore, Isouroe-drain-Vgate hysterisis is negligible when the OTFTs were tested in both bias directions at different Vgate scan rates, demonstrating excellent insulator-semiconductor interfacial properties. Bottom-contact TFTs exhibit typical lower performance (∼ ×0.1)compared to the top-contact structure. All of the devices stored in air for several months exhibit no degradation of the device characteristics.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6658
DOIs
Publication statusPublished - 2007
EventOrganic Field-Effect Transistors VI - San Diego, CA, United States
Duration: Aug 26 2007Aug 28 2007

Other

OtherOrganic Field-Effect Transistors VI
CountryUnited States
CitySan Diego, CA
Period8/26/078/28/07

Fingerprint

Thin film transistors
transistors
Electron mobility
thin films
electron mobility
Dielectric devices
Semiconductor materials
Drain current
Leakage currents
Contacts (fluid mechanics)
casts
electric contacts
leakage
Vapors
insulators
vapors
degradation
Degradation
air
Ions

Keywords

  • CMOS
  • Dielectric
  • N-channel
  • Organic transistor
  • OTFT
  • Solution process

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Yan, H., Lu, S., Zheng, Y., Inagaki, P., Facchetti, A., & Marks, T. J. (2007). High mobility solution-processed n-channel organic thin film transistors. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6658). [66580S] https://doi.org/10.1117/12.733185

High mobility solution-processed n-channel organic thin film transistors. / Yan, He; Lu, Shaofeng; Zheng, Yan; Inagaki, Philippe; Facchetti, Antonio; Marks, Tobin J.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6658 2007. 66580S.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yan, H, Lu, S, Zheng, Y, Inagaki, P, Facchetti, A & Marks, TJ 2007, High mobility solution-processed n-channel organic thin film transistors. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 6658, 66580S, Organic Field-Effect Transistors VI, San Diego, CA, United States, 8/26/07. https://doi.org/10.1117/12.733185
Yan H, Lu S, Zheng Y, Inagaki P, Facchetti A, Marks TJ. High mobility solution-processed n-channel organic thin film transistors. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6658. 2007. 66580S https://doi.org/10.1117/12.733185
Yan, He ; Lu, Shaofeng ; Zheng, Yan ; Inagaki, Philippe ; Facchetti, Antonio ; Marks, Tobin J. / High mobility solution-processed n-channel organic thin film transistors. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 6658 2007.
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