High mobility solution-processed n-channel organic thin film transistors

He Yan, Shaofeng Lu, Yan Zheng, Philippe Inagaki, Antonio Facchetti, Tobin J. Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

N-channel organic thin-film transistors (OTFTs) based on N,N'-bis(n-octyl)-(1,7&1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI8-CN2) were fabricated using different semiconductor film deposition methods, dielectric materials, and device structures. It was found that top -contact OTFTs fabricated on Si-SiO2 substrates with drop-cast or vapor deposited films afford comparable electron mobilities (0.01-0.1 cm2/Vs), much larger than those based on spincoated PDI8-CN2 films (0.001 cm2/Vs). Furthermore, n-channel top-contact TFTs were fabricated using solution-processed PDI8-CN2 films and a UV-curable solution-processed polymeric dielectric. These devices exhibit typical gate leakage currents < 1nA for Vgate > 100V, which are negligible compared to the corresponding source/drain currents (> 0.1mA). OTFTs tested in ambient exhibit electron mobilities as high as 0.05-0.2 cm 2/Vs and Ion:Ioff ∼ 105. Furthermore, Isouroe-drain-Vgate hysterisis is negligible when the OTFTs were tested in both bias directions at different Vgate scan rates, demonstrating excellent insulator-semiconductor interfacial properties. Bottom-contact TFTs exhibit typical lower performance (∼ ×0.1)compared to the top-contact structure. All of the devices stored in air for several months exhibit no degradation of the device characteristics.

Original languageEnglish
Title of host publicationOrganic Field-Effect Transistors VI
DOIs
Publication statusPublished - Dec 1 2007
EventOrganic Field-Effect Transistors VI - San Diego, CA, United States
Duration: Aug 26 2007Aug 28 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6658
ISSN (Print)0277-786X

Other

OtherOrganic Field-Effect Transistors VI
CountryUnited States
CitySan Diego, CA
Period8/26/078/28/07

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Keywords

  • CMOS
  • Dielectric
  • N-channel
  • OTFT
  • Organic transistor
  • Solution process

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Yan, H., Lu, S., Zheng, Y., Inagaki, P., Facchetti, A., & Marks, T. J. (2007). High mobility solution-processed n-channel organic thin film transistors. In Organic Field-Effect Transistors VI [66580S] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6658). https://doi.org/10.1117/12.733185