High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, A. Modic, M. Park, Y. Xu, Eric Garfunkel, S. Dhar, Leonard C Feldman, J. R. Williams

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

Original languageEnglish
Article number6407723
Pages (from-to)175-177
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number2
DOIs
Publication statusPublished - 2013

Fingerprint

phosphorus pentoxide
MOSFET devices
Passivation
Glass
Voltage control
Phosphorus
Oxides
Nitrogen
Electric potential

Keywords

  • MOSFET
  • silicon carbide
  • stability
  • thin phosphosilicate glass (PSG)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Sharma, Y. K., Ahyi, A. C., Isaacs-Smith, T., Modic, A., Park, M., Xu, Y., ... Williams, J. R. (2013). High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer. IEEE Electron Device Letters, 34(2), 175-177. [6407723]. https://doi.org/10.1109/LED.2012.2232900

High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer. / Sharma, Y. K.; Ahyi, A. C.; Isaacs-Smith, T.; Modic, A.; Park, M.; Xu, Y.; Garfunkel, Eric; Dhar, S.; Feldman, Leonard C; Williams, J. R.

In: IEEE Electron Device Letters, Vol. 34, No. 2, 6407723, 2013, p. 175-177.

Research output: Contribution to journalArticle

Sharma, YK, Ahyi, AC, Isaacs-Smith, T, Modic, A, Park, M, Xu, Y, Garfunkel, E, Dhar, S, Feldman, LC & Williams, JR 2013, 'High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer', IEEE Electron Device Letters, vol. 34, no. 2, 6407723, pp. 175-177. https://doi.org/10.1109/LED.2012.2232900
Sharma, Y. K. ; Ahyi, A. C. ; Isaacs-Smith, T. ; Modic, A. ; Park, M. ; Xu, Y. ; Garfunkel, Eric ; Dhar, S. ; Feldman, Leonard C ; Williams, J. R. / High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer. In: IEEE Electron Device Letters. 2013 ; Vol. 34, No. 2. pp. 175-177.
@article{3195b366e23e49839376ef98432837ba,
title = "High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer",
abstract = "Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.",
keywords = "MOSFET, silicon carbide, stability, thin phosphosilicate glass (PSG)",
author = "Sharma, {Y. K.} and Ahyi, {A. C.} and T. Isaacs-Smith and A. Modic and M. Park and Y. Xu and Eric Garfunkel and S. Dhar and Feldman, {Leonard C} and Williams, {J. R.}",
year = "2013",
doi = "10.1109/LED.2012.2232900",
language = "English",
volume = "34",
pages = "175--177",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",

}

TY - JOUR

T1 - High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

AU - Sharma, Y. K.

AU - Ahyi, A. C.

AU - Isaacs-Smith, T.

AU - Modic, A.

AU - Park, M.

AU - Xu, Y.

AU - Garfunkel, Eric

AU - Dhar, S.

AU - Feldman, Leonard C

AU - Williams, J. R.

PY - 2013

Y1 - 2013

N2 - Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

AB - Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

KW - MOSFET

KW - silicon carbide

KW - stability

KW - thin phosphosilicate glass (PSG)

UR - http://www.scopus.com/inward/record.url?scp=84873032595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873032595&partnerID=8YFLogxK

U2 - 10.1109/LED.2012.2232900

DO - 10.1109/LED.2012.2232900

M3 - Article

VL - 34

SP - 175

EP - 177

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

M1 - 6407723

ER -