High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

Y. K. Sharma; A. C. Ahyi; T. Isaacs-Smith; A. Modic; M. Park; Y. Xu; E. L. Garfunkel; S. Dhar; L. C. Feldman; J. R. Williams

doi:10.1109/LED.2012.2232900

High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, A. Modic, M. Park, Y. Xu, E. L. Garfunkel, S. Dhar, L. C. Feldman, J. R. Williams

Rutgers University

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

Phosphorous from P₂O₅ is more effective than nitrogen for passivating the 4H-SiC SiO₂ interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm ² V̇s. However, P₂O₅ converts the SiO ₂ layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm²V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

Original language	English
Article number	6407723
Pages (from-to)	175-177
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2232900
Publication status	Published - Jan 14 2013

Keywords

MOSFET
silicon carbide
stability
thin phosphosilicate glass (PSG)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2012.2232900

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High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer. / Sharma, Y. K.; Ahyi, A. C.; Isaacs-Smith, T.; Modic, A.; Park, M.; Xu, Y.; Garfunkel, E. L.; Dhar, S.; Feldman, L. C.; Williams, J. R.

In: IEEE Electron Device Letters, Vol. 34, No. 2, 6407723, 14.01.2013, p. 175-177.

Research output: Contribution to journal › Article › peer-review

@article{3195b366e23e49839376ef98432837ba,

title = "High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer",

abstract = "Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 {\.V}s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2{\.V}s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.",

keywords = "MOSFET, silicon carbide, stability, thin phosphosilicate glass (PSG)",

author = "Sharma, {Y. K.} and Ahyi, {A. C.} and T. Isaacs-Smith and A. Modic and M. Park and Y. Xu and Garfunkel, {E. L.} and S. Dhar and Feldman, {L. C.} and Williams, {J. R.}",

year = "2013",

month = jan,

day = "14",

doi = "10.1109/LED.2012.2232900",

language = "English",

volume = "34",

pages = "175--177",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

AU - Sharma, Y. K.

AU - Ahyi, A. C.

AU - Isaacs-Smith, T.

AU - Modic, A.

AU - Park, M.

AU - Xu, Y.

AU - Garfunkel, E. L.

AU - Dhar, S.

AU - Feldman, L. C.

AU - Williams, J. R.

PY - 2013/1/14

Y1 - 2013/1/14

N2 - Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

AB - Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

KW - MOSFET

KW - silicon carbide

KW - stability

KW - thin phosphosilicate glass (PSG)

UR - http://www.scopus.com/inward/record.url?scp=84873032595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873032595&partnerID=8YFLogxK

U2 - 10.1109/LED.2012.2232900

DO - 10.1109/LED.2012.2232900

M3 - Article

AN - SCOPUS:84873032595

VL - 34

SP - 175

EP - 177

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

M1 - 6407723

ER -

High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

Abstract

Keywords

ASJC Scopus subject areas

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