Abstract
Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.
| Original language | English |
|---|---|
| Article number | 6407723 |
| Pages (from-to) | 175-177 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 34 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2013 |
Fingerprint
Keywords
- MOSFET
- silicon carbide
- stability
- thin phosphosilicate glass (PSG)
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer. / Sharma, Y. K.; Ahyi, A. C.; Isaacs-Smith, T.; Modic, A.; Park, M.; Xu, Y.; Garfunkel, Eric; Dhar, S.; Feldman, Leonard C; Williams, J. R.
In: IEEE Electron Device Letters, Vol. 34, No. 2, 6407723, 2013, p. 175-177.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer
AU - Sharma, Y. K.
AU - Ahyi, A. C.
AU - Isaacs-Smith, T.
AU - Modic, A.
AU - Park, M.
AU - Xu, Y.
AU - Garfunkel, Eric
AU - Dhar, S.
AU - Feldman, Leonard C
AU - Williams, J. R.
PY - 2013
Y1 - 2013
N2 - Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.
AB - Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.
KW - MOSFET
KW - silicon carbide
KW - stability
KW - thin phosphosilicate glass (PSG)
UR - http://www.scopus.com/inward/record.url?scp=84873032595&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84873032595&partnerID=8YFLogxK
U2 - 10.1109/LED.2012.2232900
DO - 10.1109/LED.2012.2232900
M3 - Article
AN - SCOPUS:84873032595
VL - 34
SP - 175
EP - 177
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 2
M1 - 6407723
ER -