High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

Y. K. Sharma; A. C. Ahyi; T. Isaacs-Smith; A. Modic; M. Park; Y. Xu; E. L. Garfunkel; S. Dhar; L. C. Feldman; J. R. Williams

doi:10.1109/LED.2012.2232900

High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, A. Modic, M. Park, Y. Xu, E. L. Garfunkel, S. Dhar, L. C. Feldman, J. R. Williams

Rutgers University

Research output: Contribution to journal › Article

54 Citations (Scopus)

Abstract

Phosphorous from P₂O₅ is more effective than nitrogen for passivating the 4H-SiC SiO₂ interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm ² V̇s. However, P₂O₅ converts the SiO ₂ layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm²V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

Original language	English
Article number	6407723
Pages (from-to)	175-177
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2232900
Publication status	Published - Jan 14 2013

Fingerprint

Keywords

MOSFET
silicon carbide
stability
thin phosphosilicate glass (PSG)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Sharma, Y. K., Ahyi, A. C., Isaacs-Smith, T., Modic, A., Park, M., Xu, Y., Garfunkel, E. L., Dhar, S., Feldman, L. C., & Williams, J. R. (2013). High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer. IEEE Electron Device Letters, 34(2), 175-177. [6407723]. https://doi.org/10.1109/LED.2012.2232900

@article{3195b366e23e49839376ef98432837ba,

title = "High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer",

abstract = "Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 {\.V}s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2{\.V}s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.",

keywords = "MOSFET, silicon carbide, stability, thin phosphosilicate glass (PSG)",

author = "Sharma, {Y. K.} and Ahyi, {A. C.} and T. Isaacs-Smith and A. Modic and M. Park and Y. Xu and Garfunkel, {E. L.} and S. Dhar and Feldman, {L. C.} and Williams, {J. R.}",

year = "2013",

month = jan

day = "14",

doi = "10.1109/LED.2012.2232900",

language = "English",

volume = "34",

pages = "175--177",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "2",

}

TY - JOUR

T1 - High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

AU - Sharma, Y. K.

AU - Ahyi, A. C.

AU - Isaacs-Smith, T.

AU - Modic, A.

AU - Park, M.

AU - Xu, Y.

AU - Garfunkel, E. L.

AU - Dhar, S.

AU - Feldman, L. C.

AU - Williams, J. R.

PY - 2013/1/14

Y1 - 2013/1/14

N2 - Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

AB - Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

KW - MOSFET

KW - silicon carbide

KW - stability

KW - thin phosphosilicate glass (PSG)

UR - http://www.scopus.com/inward/record.url?scp=84873032595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873032595&partnerID=8YFLogxK

U2 - 10.1109/LED.2012.2232900

DO - 10.1109/LED.2012.2232900

M3 - Article

AN - SCOPUS:84873032595

VL - 34

SP - 175

EP - 177

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 2

M1 - 6407723

ER -

Access to Document

10.1109/LED.2012.2232900