High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, A. Modic, M. Park, Y. Xu, E. L. Garfunkel, S. Dhar, L. C. Feldman, J. R. Williams

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

Original languageEnglish
Article number6407723
Pages (from-to)175-177
Number of pages3
JournalIEEE Electron Device Letters
Volume34
Issue number2
DOIs
Publication statusPublished - Jan 14 2013

Keywords

  • MOSFET
  • silicon carbide
  • stability
  • thin phosphosilicate glass (PSG)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Sharma, Y. K., Ahyi, A. C., Isaacs-Smith, T., Modic, A., Park, M., Xu, Y., Garfunkel, E. L., Dhar, S., Feldman, L. C., & Williams, J. R. (2013). High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer. IEEE Electron Device Letters, 34(2), 175-177. [6407723]. https://doi.org/10.1109/LED.2012.2232900