High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

Y. K. Sharma; A. C. Ahyi; T. Isaacs-Smith; A. Modic; M. Park; Y. Xu; E. L. Garfunkel; S. Dhar; L. C. Feldman; J. R. Williams

doi:10.1109/LED.2012.2232900

High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, A. Modic, M. Park, Y. Xu, E. L. Garfunkel, S. Dhar, L. C. Feldman, J. R. Williams

Rutgers University

Research output: Contribution to journal › Article

57 Citations (Scopus)

Abstract

Phosphorous from P₂O₅ is more effective than nitrogen for passivating the 4H-SiC SiO₂ interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm ² V̇s. However, P₂O₅ converts the SiO ₂ layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm²V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

Original language	English
Article number	6407723
Pages (from-to)	175-177
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	2
DOIs	https://doi.org/10.1109/LED.2012.2232900
Publication status	Published - Jan 14 2013

Keywords

MOSFET
silicon carbide
stability
thin phosphosilicate glass (PSG)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2012.2232900

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Sharma, Y. K., Ahyi, A. C., Isaacs-Smith, T., Modic, A., Park, M., Xu, Y., Garfunkel, E. L., Dhar, S., Feldman, L. C., & Williams, J. R. (2013). High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer. IEEE Electron Device Letters, 34(2), 175-177. [6407723]. https://doi.org/10.1109/LED.2012.2232900

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abstract = "Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 {\.V}s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2{\.V}s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.",

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AU - Sharma, Y. K.

AU - Ahyi, A. C.

AU - Isaacs-Smith, T.

AU - Modic, A.

AU - Park, M.

AU - Xu, Y.

AU - Garfunkel, E. L.

AU - Dhar, S.

AU - Feldman, L. C.

AU - Williams, J. R.

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AB - Phosphorous from P2O5 is more effective than nitrogen for passivating the 4H-SiC SiO2 interface. The peak value of the field-effect mobility for 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) after phosphorus passivation is approximately 80 cm 2 V̇s. However, P2O5 converts the SiO 2 layer to phosphosilicate glass (PSG)-a polar material that introduces voltage instabilities which negate the benefits of lower interface trap density and higher mobility. We report a significant improvement in voltage stability with mobilities as high as 72 cm2V̇s for MOSFETs fabricated with a thin PSG gate layer (∼10 nm) capped with a deposited oxide.

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