High-mobility stable 4H-SiC MOSFETs using a thin PSG interfacial passivation layer

Y. K. Sharma, A. C. Ahyi, T. Isaacs-Smith, A. Modic, M. Park, Y. Xu, E. L. Garfunkel, S. Dhar, L. C. Feldman, J. R. Williams

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60 Citations (Scopus)

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Chemical Compounds

Engineering & Materials Science