High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel

Jun Liu, D. Bruce Buchholz, Robert P. H. Chang, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

(Figure Presented) High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large fieldeffect mobility of 110 cm2V-1S-1, a current on/off ratio of 10 4, and a low operating voltage of 1.0V, along with very good optical transparency and mechanical flexibility.

Original languageEnglish
Pages (from-to)2333-2337
Number of pages5
JournalAdvanced Materials
Volume22
Issue number21
DOIs
Publication statusPublished - Jun 4 2010

Fingerprint

Gate dielectrics
Thin film transistors
Tin oxides
Indium
Oxides
Zinc
Semiconductors
Transparency
Electrodes
Vapors
Electric potential
indium tin oxide
Oxide semiconductors

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Medicine(all)

Cite this

High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel. / Liu, Jun; Buchholz, D. Bruce; Chang, Robert P. H.; Facchetti, Antonio; Marks, Tobin J.

In: Advanced Materials, Vol. 22, No. 21, 04.06.2010, p. 2333-2337.

Research output: Contribution to journalArticle

@article{56df2dc64bec4f88897bcf9047327ba5,
title = "High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel",
abstract = "(Figure Presented) High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large fieldeffect mobility of 110 cm2V-1S-1, a current on/off ratio of 10 4, and a low operating voltage of 1.0V, along with very good optical transparency and mechanical flexibility.",
author = "Jun Liu and Buchholz, {D. Bruce} and Chang, {Robert P. H.} and Antonio Facchetti and Marks, {Tobin J}",
year = "2010",
month = "6",
day = "4",
doi = "10.1002/adma.200903761",
language = "English",
volume = "22",
pages = "2333--2337",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "21",

}

TY - JOUR

T1 - High-performance flexible transparent thin-film transistors using a hybrid gate dielectric and an amorphous zinc indium tin oxide channel

AU - Liu, Jun

AU - Buchholz, D. Bruce

AU - Chang, Robert P. H.

AU - Facchetti, Antonio

AU - Marks, Tobin J

PY - 2010/6/4

Y1 - 2010/6/4

N2 - (Figure Presented) High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large fieldeffect mobility of 110 cm2V-1S-1, a current on/off ratio of 10 4, and a low operating voltage of 1.0V, along with very good optical transparency and mechanical flexibility.

AB - (Figure Presented) High-performance flexible transparent thin-film transistors (TFTs) are demonstrated using amorphous zink indium tin oxide (ZITO) transparent oxide conductor electrodes, an amorphous ZITO transparent oxide semiconductor channel, and a vapor-deposited self-assembled nanodielectric (v-SAND) gate insulator. These TFTs exhibit a large fieldeffect mobility of 110 cm2V-1S-1, a current on/off ratio of 10 4, and a low operating voltage of 1.0V, along with very good optical transparency and mechanical flexibility.

UR - http://www.scopus.com/inward/record.url?scp=77953162588&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77953162588&partnerID=8YFLogxK

U2 - 10.1002/adma.200903761

DO - 10.1002/adma.200903761

M3 - Article

VL - 22

SP - 2333

EP - 2337

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 21

ER -