High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

H. C. Lin, P. D. Ye, Y. Xuan, G. Lu, A. Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

High-performance GaAs metal-insulator-semiconductor field-effect- transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n -channel GaAs MISFET with SAND thicknesses ranging from 5.5 to 16.5 nm exhibit a gate leakage current density <10-5 A cm2 at a gate bias smaller than 3 V, a maximum drain current of 370 mAmm at a forward gate bias of 2 V, and a maximum intrinsic transconductance of 170 mSmm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

Original languageEnglish
Article number142101
JournalApplied Physics Letters
Volume89
Issue number14
DOIs
Publication statusPublished - 2006

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MIS (semiconductors)
field effect transistors
chemistry
transconductance
depletion
leakage
current density
room temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics. / Lin, H. C.; Ye, P. D.; Xuan, Y.; Lu, G.; Facchetti, A.; Marks, Tobin J.

In: Applied Physics Letters, Vol. 89, No. 14, 142101, 2006.

Research output: Contribution to journalArticle

@article{5f39d34c62774a6ca56877e01ff8ce65,
title = "High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics",
abstract = "High-performance GaAs metal-insulator-semiconductor field-effect- transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n -channel GaAs MISFET with SAND thicknesses ranging from 5.5 to 16.5 nm exhibit a gate leakage current density <10-5 A cm2 at a gate bias smaller than 3 V, a maximum drain current of 370 mAmm at a forward gate bias of 2 V, and a maximum intrinsic transconductance of 170 mSmm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.",
author = "Lin, {H. C.} and Ye, {P. D.} and Y. Xuan and G. Lu and A. Facchetti and Marks, {Tobin J}",
year = "2006",
doi = "10.1063/1.2358202",
language = "English",
volume = "89",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

TY - JOUR

T1 - High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

AU - Lin, H. C.

AU - Ye, P. D.

AU - Xuan, Y.

AU - Lu, G.

AU - Facchetti, A.

AU - Marks, Tobin J

PY - 2006

Y1 - 2006

N2 - High-performance GaAs metal-insulator-semiconductor field-effect- transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n -channel GaAs MISFET with SAND thicknesses ranging from 5.5 to 16.5 nm exhibit a gate leakage current density <10-5 A cm2 at a gate bias smaller than 3 V, a maximum drain current of 370 mAmm at a forward gate bias of 2 V, and a maximum intrinsic transconductance of 170 mSmm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

AB - High-performance GaAs metal-insulator-semiconductor field-effect- transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n -channel GaAs MISFET with SAND thicknesses ranging from 5.5 to 16.5 nm exhibit a gate leakage current density <10-5 A cm2 at a gate bias smaller than 3 V, a maximum drain current of 370 mAmm at a forward gate bias of 2 V, and a maximum intrinsic transconductance of 170 mSmm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.

UR - http://www.scopus.com/inward/record.url?scp=33749479239&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749479239&partnerID=8YFLogxK

U2 - 10.1063/1.2358202

DO - 10.1063/1.2358202

M3 - Article

AN - SCOPUS:33749479239

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

M1 - 142101

ER -