High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

Ethan B. Secor; Jeremy Smith; Tobin J Marks; Mark C Hersam

doi:10.1021/acsami.6b02730

High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

Ethan B. Secor, Jeremy Smith, Tobin J Marks, Mark C Hersam

Northwestern University

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm²/V·s and current on/off ratio of ∼10⁵. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.

Original language	English
Pages (from-to)	17428-17434
Number of pages	7
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	27
DOIs	https://doi.org/10.1021/acsami.6b02730
Publication status	Published - Jul 13 2016

Keywords

amorphous oxide semiconductor
graphene
inkjet printing
printed electronics
stability
thin-film transistor

ASJC Scopus subject areas

Materials Science(all)

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title = "High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes",

abstract = "Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm2/V·s and current on/off ratio of ∼105. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.",

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AU - Hersam, Mark C

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High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

Abstract

Keywords

ASJC Scopus subject areas

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