High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

Ethan B. Secor, Jeremy Smith, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm2/V·s and current on/off ratio of ∼105. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.

Original languageEnglish
Pages (from-to)17428-17434
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number27
DOIs
Publication statusPublished - Jul 13 2016

Keywords

  • amorphous oxide semiconductor
  • graphene
  • inkjet printing
  • printed electronics
  • stability
  • thin-film transistor

ASJC Scopus subject areas

  • Materials Science(all)

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