High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

Ethan B. Secor, Jeremy Smith, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm2/V·s and current on/off ratio of ∼105. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.

Original languageEnglish
Pages (from-to)17428-17434
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number27
DOIs
Publication statusPublished - Jul 13 2016

Fingerprint

Zinc Oxide
Gallium
Indium
Graphite
Zinc oxide
Graphene
Transistors
Electrodes
Electronic equipment
Amorphous semiconductors
Electron mobility
Thin film transistors
Silver
Ink
Thermal stress
Oxide films
Printing
Aging of materials
Temperature

Keywords

  • amorphous oxide semiconductor
  • graphene
  • inkjet printing
  • printed electronics
  • stability
  • thin-film transistor

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes. / Secor, Ethan B.; Smith, Jeremy; Marks, Tobin J; Hersam, Mark C.

In: ACS Applied Materials and Interfaces, Vol. 8, No. 27, 13.07.2016, p. 17428-17434.

Research output: Contribution to journalArticle

@article{fdaaf5dc9a9a4eeebe05205bc3b1948a,
title = "High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes",
abstract = "Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm2/V·s and current on/off ratio of ∼105. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.",
keywords = "amorphous oxide semiconductor, graphene, inkjet printing, printed electronics, stability, thin-film transistor",
author = "Secor, {Ethan B.} and Jeremy Smith and Marks, {Tobin J} and Hersam, {Mark C}",
year = "2016",
month = "7",
day = "13",
doi = "10.1021/acsami.6b02730",
language = "English",
volume = "8",
pages = "17428--17434",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "27",

}

TY - JOUR

T1 - High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

AU - Secor, Ethan B.

AU - Smith, Jeremy

AU - Marks, Tobin J

AU - Hersam, Mark C

PY - 2016/7/13

Y1 - 2016/7/13

N2 - Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm2/V·s and current on/off ratio of ∼105. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.

AB - Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm2/V·s and current on/off ratio of ∼105. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.

KW - amorphous oxide semiconductor

KW - graphene

KW - inkjet printing

KW - printed electronics

KW - stability

KW - thin-film transistor

UR - http://www.scopus.com/inward/record.url?scp=84978871070&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84978871070&partnerID=8YFLogxK

U2 - 10.1021/acsami.6b02730

DO - 10.1021/acsami.6b02730

M3 - Article

VL - 8

SP - 17428

EP - 17434

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 27

ER -