Abstract
Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm2/V·s and current on/off ratio of ∼105. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.
Original language | English |
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Pages (from-to) | 17428-17434 |
Number of pages | 7 |
Journal | ACS Applied Materials and Interfaces |
Volume | 8 |
Issue number | 27 |
DOIs | |
Publication status | Published - Jul 13 2016 |
Keywords
- amorphous oxide semiconductor
- graphene
- inkjet printing
- printed electronics
- stability
- thin-film transistor
ASJC Scopus subject areas
- Materials Science(all)