Abstract
Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm2/V·s and current on/off ratio of ∼105. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.
| Original language | English |
|---|---|
| Pages (from-to) | 17428-17434 |
| Number of pages | 7 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 8 |
| Issue number | 27 |
| DOIs | |
| Publication status | Published - Jul 13 2016 |
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Keywords
- amorphous oxide semiconductor
- graphene
- inkjet printing
- printed electronics
- stability
- thin-film transistor
ASJC Scopus subject areas
- Materials Science(all)
Cite this
High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes. / Secor, Ethan B.; Smith, Jeremy; Marks, Tobin J; Hersam, Mark C.
In: ACS Applied Materials and Interfaces, Vol. 8, No. 27, 13.07.2016, p. 17428-17434.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes
AU - Secor, Ethan B.
AU - Smith, Jeremy
AU - Marks, Tobin J
AU - Hersam, Mark C
PY - 2016/7/13
Y1 - 2016/7/13
N2 - Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm2/V·s and current on/off ratio of ∼105. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.
AB - Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm2/V·s and current on/off ratio of ∼105. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.
KW - amorphous oxide semiconductor
KW - graphene
KW - inkjet printing
KW - printed electronics
KW - stability
KW - thin-film transistor
UR - http://www.scopus.com/inward/record.url?scp=84978871070&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84978871070&partnerID=8YFLogxK
U2 - 10.1021/acsami.6b02730
DO - 10.1021/acsami.6b02730
M3 - Article
AN - SCOPUS:84978871070
VL - 8
SP - 17428
EP - 17434
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 27
ER -