High performance In2O3 nanowire transistors using organic gate nanodielectrics

Sanghyun Ju, Fumiaki Ishikawa, Pochiang Chen, Hsiao Kang Chang, Chongwu Zhou, Young Geun Ha, Jun Liu, Antonio Facchetti, Tobin J. Marks, David B. Janes

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

We report the fabrication of high performance nanowire transistors (NWTs) using In2O3 nanowires as the active channel and a self-assembled nanodielectric (SAND) as the gate insulator. The SAND-based single In2O3 NWTs are controlled by individually addressed gate electrodes. These devices exhibit n -type transistor characteristics with an on-current of ∼25 μA for a single In2O3 nanowire at 2.0 Vds, 2.1 Vgs, a subthreshold slope of 0.2 V /decade, an on-off current ratio of 106, and a field-effect mobility of ∼1450 cm2 V s. These results demonstrate that SAND-based In2O3 NWTs are promising candidates for high performance nanoscale logic technologies.

Original languageEnglish
Article number222105
JournalApplied Physics Letters
Volume92
Issue number22
DOIs
Publication statusPublished - Jun 13 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High performance In<sub>2</sub>O<sub>3</sub> nanowire transistors using organic gate nanodielectrics'. Together they form a unique fingerprint.

  • Cite this

    Ju, S., Ishikawa, F., Chen, P., Chang, H. K., Zhou, C., Ha, Y. G., Liu, J., Facchetti, A., Marks, T. J., & Janes, D. B. (2008). High performance In2O3 nanowire transistors using organic gate nanodielectrics. Applied Physics Letters, 92(22), [222105]. https://doi.org/10.1063/1.2937111