We report the fabrication of high performance nanowire transistors (NWTs) using In2O3 nanowires as the active channel and a self-assembled nanodielectric (SAND) as the gate insulator. The SAND-based single In2O3 NWTs are controlled by individually addressed gate electrodes. These devices exhibit n -type transistor characteristics with an on-current of ∼25 μA for a single In2O3 nanowire at 2.0 Vds, 2.1 Vgs, a subthreshold slope of 0.2 V /decade, an on-off current ratio of 106, and a field-effect mobility of ∼1450 cm2 V s. These results demonstrate that SAND-based In2O3 NWTs are promising candidates for high performance nanoscale logic technologies.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)