High performance in2O3 nanowire transistors using organic gate nanodielectrics

Sanghyun Ju, Gang Lu, Po Chiang Chen, Antonio Facchetti, Chongwu Zhou, Tobin J. Marks, David B. Janes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication65th DRC Device Research Conference
Number of pages2
Publication statusPublished - Dec 1 2007
Event65th DRC Device Research Conference - South Bend, India
Duration: Jun 18 2007Jun 20 2007

Publication series

Name65th DRC Device Research Conference


Other65th DRC Device Research Conference
CitySouth Bend

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Ju, S., Lu, G., Chen, P. C., Facchetti, A., Zhou, C., Marks, T. J., & Janes, D. B. (2007). High performance in2O3 nanowire transistors using organic gate nanodielectrics. In 65th DRC Device Research Conference (pp. 169-170). [4373702] (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373702