High performance in2O3 nanowire transistors using organic gate nanodielectrics

Sanghyun Ju; Gang Lu; Po Chiang Chen; Antonio Facchetti; Chongwu Zhou; Tobin J. Marks; David B. Janes

doi:10.1109/DRC.2007.4373702

High performance in₂O₃ nanowire transistors using organic gate nanodielectrics

Sanghyun Ju, Gang Lu, Po Chiang Chen, Antonio Facchetti, Chongwu Zhou, Tobin J. Marks, David B. Janes

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	65th DRC Device Research Conference
Pages	169-170
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373702
Publication status	Published - Dec 1 2007
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Publication series

Name	65th DRC Device Research Conference

Other

Other	65th DRC Device Research Conference
Country	India
City	South Bend
Period	6/18/07 → 6/20/07

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2007.4373702

Cite this

Ju, S., Lu, G., Chen, P. C., Facchetti, A., Zhou, C., Marks, T. J., & Janes, D. B. (2007). High performance in₂O₃ nanowire transistors using organic gate nanodielectrics. In 65th DRC Device Research Conference (pp. 169-170). [4373702] (65th DRC Device Research Conference). https://doi.org/10.1109/DRC.2007.4373702

High performance in₂O₃ nanowire transistors using organic gate nanodielectrics. / Ju, Sanghyun; Lu, Gang; Chen, Po Chiang; Facchetti, Antonio; Zhou, Chongwu; Marks, Tobin J.; Janes, David B.

65th DRC Device Research Conference. 2007. p. 169-170 4373702 (65th DRC Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

@inproceedings{f24a725b11774b98af75cc68e068aa1e,

title = "High performance in2O3 nanowire transistors using organic gate nanodielectrics",

author = "Sanghyun Ju and Gang Lu and Chen, {Po Chiang} and Antonio Facchetti and Chongwu Zhou and Marks, {Tobin J.} and Janes, {David B.}",

year = "2007",

month = dec,

day = "1",

doi = "10.1109/DRC.2007.4373702",

language = "English",

isbn = "1424411025",

series = "65th DRC Device Research Conference",

pages = "169--170",

booktitle = "65th DRC Device Research Conference",

note = "65th DRC Device Research Conference ; Conference date: 18-06-2007 Through 20-06-2007",

}

TY - GEN

T1 - High performance in2O3 nanowire transistors using organic gate nanodielectrics

AU - Ju, Sanghyun

AU - Lu, Gang

AU - Chen, Po Chiang

AU - Facchetti, Antonio

AU - Zhou, Chongwu

AU - Marks, Tobin J.

AU - Janes, David B.

PY - 2007/12/1

Y1 - 2007/12/1

UR - http://www.scopus.com/inward/record.url?scp=47249084384&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47249084384&partnerID=8YFLogxK

U2 - 10.1109/DRC.2007.4373702

DO - 10.1109/DRC.2007.4373702

M3 - Conference contribution

AN - SCOPUS:47249084384

SN - 1424411025

SN - 9781424411023

T3 - 65th DRC Device Research Conference

SP - 169

EP - 170

BT - 65th DRC Device Research Conference

T2 - 65th DRC Device Research Conference

Y2 - 18 June 2007 through 20 June 2007

ER -