High performance in2O3 nanowire transistors using organic gate nanodielectrics

High performance in₂O₃ nanowire transistors using organic gate nanodielectrics

Sanghyun Ju, Gang Lu, Po Chiang Chen, Antonio Facchetti, Chongwu Zhou, Tobin J Marks, David B. Janes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	65th DRC Device Research Conference
Pages	169-170
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373702
Publication status	Published - 2007
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Other	65th DRC Device Research Conference
Country	India
City	South Bend
Period	6/18/07 → 6/20/07

Ju, S., Lu, G., Chen, P. C., Facchetti, A., Zhou, C., Marks, T. J., & Janes, D. B. (2007). High performance in₂O₃ nanowire transistors using organic gate nanodielectrics. In 65th DRC Device Research Conference (pp. 169-170). [4373702] https://doi.org/10.1109/DRC.2007.4373702

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AU - Chen, Po Chiang

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AU - Zhou, Chongwu

AU - Marks, Tobin J

AU - Janes, David B.

PY - 2007

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SN - 1424411025

SN - 9781424411023

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EP - 170

BT - 65th DRC Device Research Conference

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