High performance in2O3 nanowire transistors using organic gate nanodielectrics

Sanghyun Ju, Gang Lu, Po Chiang Chen, Antonio Facchetti, Chongwu Zhou, Tobin J Marks, David B. Janes

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publication65th DRC Device Research Conference
Pages169-170
Number of pages2
DOIs
Publication statusPublished - 2007
Event65th DRC Device Research Conference - South Bend, India
Duration: Jun 18 2007Jun 20 2007

Other

Other65th DRC Device Research Conference
CountryIndia
CitySouth Bend
Period6/18/076/20/07

Fingerprint

Nanowires
Transistors

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Ju, S., Lu, G., Chen, P. C., Facchetti, A., Zhou, C., Marks, T. J., & Janes, D. B. (2007). High performance in2O3 nanowire transistors using organic gate nanodielectrics. In 65th DRC Device Research Conference (pp. 169-170). [4373702] https://doi.org/10.1109/DRC.2007.4373702

High performance in2O3 nanowire transistors using organic gate nanodielectrics. / Ju, Sanghyun; Lu, Gang; Chen, Po Chiang; Facchetti, Antonio; Zhou, Chongwu; Marks, Tobin J; Janes, David B.

65th DRC Device Research Conference. 2007. p. 169-170 4373702.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ju, S, Lu, G, Chen, PC, Facchetti, A, Zhou, C, Marks, TJ & Janes, DB 2007, High performance in2O3 nanowire transistors using organic gate nanodielectrics. in 65th DRC Device Research Conference., 4373702, pp. 169-170, 65th DRC Device Research Conference, South Bend, India, 6/18/07. https://doi.org/10.1109/DRC.2007.4373702
Ju S, Lu G, Chen PC, Facchetti A, Zhou C, Marks TJ et al. High performance in2O3 nanowire transistors using organic gate nanodielectrics. In 65th DRC Device Research Conference. 2007. p. 169-170. 4373702 https://doi.org/10.1109/DRC.2007.4373702
Ju, Sanghyun ; Lu, Gang ; Chen, Po Chiang ; Facchetti, Antonio ; Zhou, Chongwu ; Marks, Tobin J ; Janes, David B. / High performance in2O3 nanowire transistors using organic gate nanodielectrics. 65th DRC Device Research Conference. 2007. pp. 169-170
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