High performance in2O3 nanowire transistors using organic gate nanodielectrics

Sanghyun Ju; Gang Lu; Po Chiang Chen; Antonio Facchetti; Chongwu Zhou; Tobin J Marks; David B. Janes

doi:10.1109/DRC.2007.4373702

High performance in₂O₃ nanowire transistors using organic gate nanodielectrics

Sanghyun Ju, Gang Lu, Po Chiang Chen, Antonio Facchetti, Chongwu Zhou, Tobin J Marks, David B. Janes

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	65th DRC Device Research Conference
Pages	169-170
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373702
Publication status	Published - 2007
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Other

Other	65th DRC Device Research Conference
Country	India
City	South Bend
Period	6/18/07 → 6/20/07

Fingerprint

Nanowires

Transistors

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Ju, S., Lu, G., Chen, P. C., Facchetti, A., Zhou, C., Marks, T. J., & Janes, D. B. (2007). High performance in₂O₃ nanowire transistors using organic gate nanodielectrics. In 65th DRC Device Research Conference (pp. 169-170). [4373702] https://doi.org/10.1109/DRC.2007.4373702

High performance in₂O₃ nanowire transistors using organic gate nanodielectrics. / Ju, Sanghyun; Lu, Gang; Chen, Po Chiang; Facchetti, Antonio; Zhou, Chongwu; Marks, Tobin J; Janes, David B.

65th DRC Device Research Conference. 2007. p. 169-170 4373702.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ju, S, Lu, G, Chen, PC, Facchetti, A, Zhou, C, Marks, TJ & Janes, DB 2007, High performance in₂O₃ nanowire transistors using organic gate nanodielectrics. in 65th DRC Device Research Conference., 4373702, pp. 169-170, 65th DRC Device Research Conference, South Bend, India, 6/18/07. https://doi.org/10.1109/DRC.2007.4373702

Ju S, Lu G, Chen PC, Facchetti A, Zhou C, Marks TJ et al. High performance in₂O₃ nanowire transistors using organic gate nanodielectrics. In 65th DRC Device Research Conference. 2007. p. 169-170. 4373702 https://doi.org/10.1109/DRC.2007.4373702

Ju, Sanghyun ; Lu, Gang ; Chen, Po Chiang ; Facchetti, Antonio ; Zhou, Chongwu ; Marks, Tobin J ; Janes, David B. / High performance in₂O₃ nanowire transistors using organic gate nanodielectrics. 65th DRC Device Research Conference. 2007. pp. 169-170

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Access to Document

10.1109/DRC.2007.4373702