High performance in2O3 nanowire transistors using organic gate nanodielectrics

Sanghyun Ju; Gang Lu; Po Chiang Chen; Antonio Facchetti; Chongwu Zhou; Tobin J. Marks; David B. Janes

doi:10.1109/DRC.2007.4373702

High performance in₂O₃ nanowire transistors using organic gate nanodielectrics

Sanghyun Ju, Gang Lu, Po Chiang Chen, Antonio Facchetti, Chongwu Zhou, Tobin J. Marks, David B. Janes

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	65th DRC Device Research Conference
Pages	169-170
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2007.4373702
Publication status	Published - Dec 1 2007
Event	65th DRC Device Research Conference - South Bend, India Duration: Jun 18 2007 → Jun 20 2007

Publication series

Name	65th DRC Device Research Conference

Other

Other	65th DRC Device Research Conference
Country	India
City	South Bend
Period	6/18/07 → 6/20/07

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2007.4373702

Cite this

High performance in₂O₃ nanowire transistors using organic gate nanodielectrics. / Ju, Sanghyun; Lu, Gang; Chen, Po Chiang; Facchetti, Antonio; Zhou, Chongwu; Marks, Tobin J.; Janes, David B.

65th DRC Device Research Conference. 2007. p. 169-170 4373702 (65th DRC Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Marks, Tobin J.

AU - Janes, David B.

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SN - 9781424411023

T3 - 65th DRC Device Research Conference

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