High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

Yu Cao, Yuchi Che, Jung Woo T Seo, Hui Gui, Mark C Hersam, Chongwu Zhou

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain current saturation with an output resistance of ∼100 KΩ μm. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailored diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics.

Original languageEnglish
Article number233105
JournalApplied Physics Letters
Volume108
Issue number23
DOIs
Publication statusPublished - Jun 6 2016

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radio frequencies
transistors
carbon nanotubes
power gain
transconductance
cut-off
saturation
output
thin films
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes. / Cao, Yu; Che, Yuchi; Seo, Jung Woo T; Gui, Hui; Hersam, Mark C; Zhou, Chongwu.

In: Applied Physics Letters, Vol. 108, No. 23, 233105, 06.06.2016.

Research output: Contribution to journalArticle

Cao, Yu ; Che, Yuchi ; Seo, Jung Woo T ; Gui, Hui ; Hersam, Mark C ; Zhou, Chongwu. / High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes. In: Applied Physics Letters. 2016 ; Vol. 108, No. 23.
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