We report high-performance arsenic (As)-doped indium oxide (In 2O3) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In2O3 nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (∼1490 cm2 V-1 s-1), current on/off ratios (5.7 × 106), steep subthreshold slopes (88 mV/dec), and a saturation current of 60 μA for a single nanowire. By using a self-assembled nanodielectric (SAND) as the gate dielectric, the device mobilities and saturation current can be further improved up to 2560 cm2 V-1 s-1 and 160 μA, pectively. All devices exhibit good optical transparency (∼81% on average) in the visible spectral range. In addition, the nanowire TTFTs were utilized to control green OLEDs with varied intensities. Furthermore, a fully integrated AMOLED display was fabricated with a good transparency of 40% and with each pixel controlled by two nanowire transistors. This work demonstrates that the performance enhancement possible by combining nanowire doping and self-assembled nanodielectrics enables silicon-free electronic circuitry for low power consumption, optically transparent, high-frequency devices assembled near room temperature.
- AMOLED display
- Metal oxide nanowire synthesis
- Self-assembled gate dielectric (SAND)
- Transparent electronics
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy(all)