High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays

Po Chiang Chen, Guozhen Shen, Haitian Chen, Young Geun Ha, Chao Wu, Saowalak Sukcharoenchoke, Yue Fu, Jun Liu, Antonio Facchetti, Tobin J Marks, Mark E. Thompson, Chongwu Zhou

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

We report high-performance arsenic (As)-doped indium oxide (In 2O3) nanowires for transparent electronics, including their implementation in transparent thin-film transistors (TTFTs) and transparent active-matrix organic light-emitting diode (AMOLED) displays. The As-doped In2O3 nanowires were synthesized using a laser ablation process and then fabricated into TTFTs with indium-tin oxide (ITO) as the source, drain, and gate electrodes. The nanowire TTFTs on glass substrates exhibit very high device mobilities (∼1490 cm2 V-1 s-1), current on/off ratios (5.7 × 106), steep subthreshold slopes (88 mV/dec), and a saturation current of 60 μA for a single nanowire. By using a self-assembled nanodielectric (SAND) as the gate dielectric, the device mobilities and saturation current can be further improved up to 2560 cm2 V-1 s-1 and 160 μA, pectively. All devices exhibit good optical transparency (∼81% on average) in the visible spectral range. In addition, the nanowire TTFTs were utilized to control green OLEDs with varied intensities. Furthermore, a fully integrated AMOLED display was fabricated with a good transparency of 40% and with each pixel controlled by two nanowire transistors. This work demonstrates that the performance enhancement possible by combining nanowire doping and self-assembled nanodielectrics enables silicon-free electronic circuitry for low power consumption, optically transparent, high-frequency devices assembled near room temperature.

Original languageEnglish
Pages (from-to)3383-3390
Number of pages8
JournalACS Nano
Volume3
Issue number11
DOIs
Publication statusPublished - Nov 24 2009

Fingerprint

Organic light emitting diodes (OLED)
Arsenic
Thin film transistors
arsenic
indium oxides
Indium
Nanowires
nanowires
transistors
light emitting diodes
Display devices
Crystalline materials
Oxides
matrices
thin films
Transparency
saturation
Gate dielectrics
Silicon
Laser ablation

Keywords

  • AMOLED display
  • Metal oxide nanowire synthesis
  • Self-assembled gate dielectric (SAND)
  • Transparent electronics

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays. / Chen, Po Chiang; Shen, Guozhen; Chen, Haitian; Ha, Young Geun; Wu, Chao; Sukcharoenchoke, Saowalak; Fu, Yue; Liu, Jun; Facchetti, Antonio; Marks, Tobin J; Thompson, Mark E.; Zhou, Chongwu.

In: ACS Nano, Vol. 3, No. 11, 24.11.2009, p. 3383-3390.

Research output: Contribution to journalArticle

Chen, PC, Shen, G, Chen, H, Ha, YG, Wu, C, Sukcharoenchoke, S, Fu, Y, Liu, J, Facchetti, A, Marks, TJ, Thompson, ME & Zhou, C 2009, 'High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays', ACS Nano, vol. 3, no. 11, pp. 3383-3390. https://doi.org/10.1021/nn900704c
Chen, Po Chiang ; Shen, Guozhen ; Chen, Haitian ; Ha, Young Geun ; Wu, Chao ; Sukcharoenchoke, Saowalak ; Fu, Yue ; Liu, Jun ; Facchetti, Antonio ; Marks, Tobin J ; Thompson, Mark E. ; Zhou, Chongwu. / High-performance single-crystalline arsenic-doped indium oxide nanowires for transparent thin-film transistors and active matrix organic light-emitting diode displays. In: ACS Nano. 2009 ; Vol. 3, No. 11. pp. 3383-3390.
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