High-performance solution-deposited n-channel organic transistors and their complementary circuits

Byungwook Yoo, Brooks A. Jones, Debarshi Basu, Daniel Fine, Taeho Jung, Siddharth Mohapatra, Antonio Facchetti, Klaus Dimmler, Michael R Wasielewski, Tobin J Marks, Ananth Dodabalapur

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

The fabrication of high-performance solution-deposited n-channel organic transistors and their complementary circuits from a PDI-8CN2 solution with micro-injector patterning technique were reported. The scans of vapor- and solution-deposited films indicate a significantly textured thin film microstructure where the molecular long axes are tilted at 40°. Higher annealing temperatures are found to eliminate residual solvent, oxygen, and moisture from the films and are favorable for reconstruction to more ordered film micro- and grain structures. The complementary circuits consisting of p- and n-channel transistors are ideal configuration for organic semiconductors, offering low static power dissipation. The operating frequency of the ring oscillator of a single transistor is achieved in vacuum and in ambient atmosphere at room temperature.

Original languageEnglish
Pages (from-to)4028-4032
Number of pages5
JournalAdvanced Materials
Volume19
Issue number22
DOIs
Publication statusPublished - Nov 19 2007

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Transistors
Networks (circuits)
Microstructure
Semiconducting organic compounds
Crystal microstructure
Energy dissipation
Moisture
Vapors
Vacuum
Annealing
Oxygen
Fabrication
Thin films
Temperature

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Yoo, B., Jones, B. A., Basu, D., Fine, D., Jung, T., Mohapatra, S., ... Dodabalapur, A. (2007). High-performance solution-deposited n-channel organic transistors and their complementary circuits. Advanced Materials, 19(22), 4028-4032. https://doi.org/10.1002/adma.200700064

High-performance solution-deposited n-channel organic transistors and their complementary circuits. / Yoo, Byungwook; Jones, Brooks A.; Basu, Debarshi; Fine, Daniel; Jung, Taeho; Mohapatra, Siddharth; Facchetti, Antonio; Dimmler, Klaus; Wasielewski, Michael R; Marks, Tobin J; Dodabalapur, Ananth.

In: Advanced Materials, Vol. 19, No. 22, 19.11.2007, p. 4028-4032.

Research output: Contribution to journalArticle

Yoo, B, Jones, BA, Basu, D, Fine, D, Jung, T, Mohapatra, S, Facchetti, A, Dimmler, K, Wasielewski, MR, Marks, TJ & Dodabalapur, A 2007, 'High-performance solution-deposited n-channel organic transistors and their complementary circuits', Advanced Materials, vol. 19, no. 22, pp. 4028-4032. https://doi.org/10.1002/adma.200700064
Yoo, Byungwook ; Jones, Brooks A. ; Basu, Debarshi ; Fine, Daniel ; Jung, Taeho ; Mohapatra, Siddharth ; Facchetti, Antonio ; Dimmler, Klaus ; Wasielewski, Michael R ; Marks, Tobin J ; Dodabalapur, Ananth. / High-performance solution-deposited n-channel organic transistors and their complementary circuits. In: Advanced Materials. 2007 ; Vol. 19, No. 22. pp. 4028-4032.
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