High-performance solution-deposited n-channel organic transistors and their complementary circuits

Byungwook Yoo, Brooks A. Jones, Debarshi Basu, Daniel Fine, Taeho Jung, Siddharth Mohapatra, Antonio Facchetti, Klaus Dimmler, Michael R. Wasielewski, Tobin J. Marks, Ananth Dodabalapur

Research output: Contribution to journalArticle

99 Citations (Scopus)

Abstract

The fabrication of high-performance solution-deposited n-channel organic transistors and their complementary circuits from a PDI-8CN2 solution with micro-injector patterning technique were reported. The scans of vapor- and solution-deposited films indicate a significantly textured thin film microstructure where the molecular long axes are tilted at 40°. Higher annealing temperatures are found to eliminate residual solvent, oxygen, and moisture from the films and are favorable for reconstruction to more ordered film micro- and grain structures. The complementary circuits consisting of p- and n-channel transistors are ideal configuration for organic semiconductors, offering low static power dissipation. The operating frequency of the ring oscillator of a single transistor is achieved in vacuum and in ambient atmosphere at room temperature.

Original languageEnglish
Pages (from-to)4028-4032
Number of pages5
JournalAdvanced Materials
Volume19
Issue number22
DOIs
Publication statusPublished - Nov 19 2007

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'High-performance solution-deposited n-channel organic transistors and their complementary circuits'. Together they form a unique fingerprint.

  • Cite this

    Yoo, B., Jones, B. A., Basu, D., Fine, D., Jung, T., Mohapatra, S., Facchetti, A., Dimmler, K., Wasielewski, M. R., Marks, T. J., & Dodabalapur, A. (2007). High-performance solution-deposited n-channel organic transistors and their complementary circuits. Advanced Materials, 19(22), 4028-4032. https://doi.org/10.1002/adma.200700064