High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors

Myung Gil Kim, Hyun Sung Kim, Young Geun Ha, Jiaqing He, Mercouri G Kanatzidis, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

184 Citations (Scopus)

Abstract

Films of the high-performance solution-processed amorphous oxide semiconductor a-ZnIn4Sn4O15, grown from 2-methoxyethanol/ethanolamine solutions, were used to fabricate thin-film transistors (TFTs) in combination with an organic self-assembled nanodielectric as the gate insulator. This structurally dense-packed semiconductor composition with minimal Zn2+ incorporation strongly suppresses transistor off-currents without significant mobility degradation, and affords field-effect electron mobilities of ∼90 cm2 V-1 s-1 (104 cm2 V-1 s-1 maximum obtained for patterned ZITO films), with Ion/Ioff ratio ∼105, a subthreshhold swing of ∼0.2 V/dec, and operating voltage 9-2xIn xSnxO9+1.5x (x = 1-4) and ZnIn 8-xSnxO13+0.5x (x = 1-7) were systematically investigated to elucidate those factors which yield optimum mobility, I on/Ioff, and threshold voltage parameters. It is shown that structural relaxation and densification by In3+ and Sn 4+ mixing is effective in reducing carrier trap sites and in creating carrier-generating oxygen vacancies. In contrast to the above results for TFTs fabricated with the organic self-assembled nanodielectric, ZnIn 4Sn4O15 TFTs fabricated with SiO2 gate insulators exhibit electron mobilities of only ∼11 cm2 V-1 s-1 with Ion/Ioff ratios ∼105, and a subthreshhold swing of ∼9.5 V/dec.

Original languageEnglish
Pages (from-to)10352-10364
Number of pages13
JournalJournal of the American Chemical Society
Volume132
Issue number30
DOIs
Publication statusPublished - Aug 4 2010

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Semiconductors
Thin film transistors
Tin oxides
Indium
Oxide films
Zinc
Electron mobility
Electrons
Ions
Ethanolamine
Oxides
Ethanolamines
Amorphous semiconductors
Structural relaxation
Oxygen vacancies
Oxygen
Threshold voltage
Densification
Transistors
Semiconductor materials

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors. / Kim, Myung Gil; Kim, Hyun Sung; Ha, Young Geun; He, Jiaqing; Kanatzidis, Mercouri G; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 132, No. 30, 04.08.2010, p. 10352-10364.

Research output: Contribution to journalArticle

Kim, Myung Gil ; Kim, Hyun Sung ; Ha, Young Geun ; He, Jiaqing ; Kanatzidis, Mercouri G ; Facchetti, Antonio ; Marks, Tobin J. / High-performance solution-processed amorphous zinc-indium-tin oxide thin-film transistors. In: Journal of the American Chemical Society. 2010 ; Vol. 132, No. 30. pp. 10352-10364.
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