High performance solution-processed indium oxide thin-film transistors

Sung Kim Hyun, Paul D. Byrne, Antonio Facchetti, Tobin J. Marks

Research output: Contribution to journalArticle

143 Citations (Scopus)

Abstract

In2O3 thin-film transistors (TFTs) were fabricated on various dielectrics [SiO2, self-assembled nanodielectrics (SANDs)] by spin-coating In2O3 film precursor solutions consisting of ethanolamine (EAA) and InCl3 in methoxyethanol. Optimized film microstructures are characterized by the high-mobility In2O3 00 L orientation and are obtained only within a well-defined range of base: In3+ molar ratios. Electron mobilities as high as ∼44 cm2 V-1 s-1 are measured for n+-Si/SAND/In2O3/Au devices using an EAA/In3+ molar ratio = 10. This result combined with Ion/Ioff ratios of ∼106 and

Original languageEnglish
Pages (from-to)12580-12581
Number of pages2
JournalJournal of the American Chemical Society
Volume130
Issue number38
DOIs
Publication statusPublished - Sep 24 2008

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Ethanolamines
Ethanolamine
Thin film transistors
Indium
Oxide films
Electron mobility
Spin coating
Electrons
Ions
Equipment and Supplies
Microstructure
indium oxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

High performance solution-processed indium oxide thin-film transistors. / Hyun, Sung Kim; Byrne, Paul D.; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 130, No. 38, 24.09.2008, p. 12580-12581.

Research output: Contribution to journalArticle

Hyun, Sung Kim ; Byrne, Paul D. ; Facchetti, Antonio ; Marks, Tobin J. / High performance solution-processed indium oxide thin-film transistors. In: Journal of the American Chemical Society. 2008 ; Vol. 130, No. 38. pp. 12580-12581.
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