High-performance thin-film transistors from solution-processed cadmium selenide and a self-assembled multilayer gate dielectric

Paul D. Byrne, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

A study was conducted to demonstrate the first fabrication of thin-film transistors (TFT), using a solution-processed inorganic semiconductor combined with a solution-processed organic gate dielectric. It was found that the field-effect mobilities demonstrated in the study are as high as 57 cm 2V-1s-1, with large lon/l offratios and a subthreshold slopes as low as 0.26 V dec -1. The study also demonstrated that such performance parameters make these devices suitable for a wide range of applications. It was also demonstrated that TFT results represent a significant step in large-area electronics fabrication, considering the simplicity of the semiconductor and dielectric film deposition methods.

Original languageEnglish
Pages (from-to)2319-2324
Number of pages6
JournalAdvanced Materials
Volume20
Issue number12
DOIs
Publication statusPublished - Jun 18 2008

Fingerprint

Gate dielectrics
Thin film transistors
Cadmium
Multilayers
Semiconductor materials
Fabrication
Dielectric films
Electronic equipment
cadmium selenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

High-performance thin-film transistors from solution-processed cadmium selenide and a self-assembled multilayer gate dielectric. / Byrne, Paul D.; Facchetti, Antonio; Marks, Tobin J.

In: Advanced Materials, Vol. 20, No. 12, 18.06.2008, p. 2319-2324.

Research output: Contribution to journalArticle

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